Eorex EM6112K1600WBA-70IF 512kx8 lp sram Datasheet

512Kx8 LP SRAM EM6112K800V Series
GENERAL DESCRIPTION
The EM6112K800V is a 4,194,304-bit low power CMOS static random access memory organized as
524,288 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology.
Its standby current is stable within the range of operating temperature.
The EM6112K800V is well designed for low power application, and particularly well suited for battery
back-up nonvolatile memory application.
The EM6112K800V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
FEATURES
z
z
z
z
Fast access time: 45/55/70ns
Low power consumption:
Operating current:
40/30/20mA (TYP.)
Standby current: -L/-LL version
20/2µA (TYP.)
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
z
z
z
z
Fully static operation
Tri-state output
Data retention voltage: 1.5V (MIN.)
Package:
32-pin 450 mil SOP
32-pin 8mm x 20mm TSOP-I
32-pin 8mm x 13.4mm STSOP
36-ball 6mm x 8mm TFBGA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A18
DECODER
DQ0-DQ7
I/O DATA
CURCUIT
CE#
WE#
OE#
CONTROL
CIRCUIT
512Kx8
MEMORY
ARRAY
COLUMN I/O
PIN DESCRIPTION
SYMBOL
A0 - A18
DQ0 – DQ7
CE#
WE#
OE#
Vcc
Vss
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Enable Input
Write Enable Input
Output Enable Input
Power Supply
Ground
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DCC-SR-041005-A
512Kx8 LP SRAM EM6112K800V Series
PIN CONFIGURATION
SOP
A18
1
32
Vcc
A16
2
31
A15
A14
3
30
A17
A12
4
29
WE#
A7
5
28
A13
A6
6
27
A8
A5
7
26
A9
A4
8
25
A11
A3
9
24
OE#
A2
10
23
A10
A1
11
22
CE#
A0
12
21
DQ7
DQ0
13
20
DQ6
DQ1
14
19
DQ5
DQ2
15
18
DQ4
Vss
16
17
DQ3
TSOP-I/STSOP
A11
A9
A8
A13
WE#
A17
A15
Vcc
A18
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
2
OE#
A10
CE#
DQ7
DQ6
DQ5
DQ4
DQ3
Vss
DQ2
DQ1
DQ0
A0
A1
A2
A3
DCC-SR-041005-A
512Kx8 LP SRAM EM6112K800V Series
TFBGA
A
B
C
D
E
F
G
H
A0
DQ4
DQ5
Vss
Vcc
DQ6
DQ7
A9
1
A1
A2
OE#
A10
2
3
NC
WE#
NC
A3
A4
A5
A17
CE#
A11
3
A18
A16
A12
4
A6
A7
A15
A13
5
A8
DQ0
DQ1
Vcc
Vss
DQ2
DQ3
A14
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DCC-SR-041005-A
512Kx8 LP SRAM EM6112K800V Series
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
VTERM
-0.5 to 4.6
V
Terminal Voltage with Respect to Vss
0 to 70(C grade)
Operating Temperature
TA
-20 to 80(E grade)
°C
-40 to 85(I grade)
Storage Temperature
TSTG
-65 to 150
°C
Power Dissipation
PD
1
W
DC Output Current
IOUT
50
mA
TSOLDER
260
°C
Soldering Temperature (under 10 sec)
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device
reliability.
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
CE#
H
L
L
L
OE#
X
H
L
X
WE#
X
H
H
L
I/O OPERATION
High-Z
High-Z
DOUT
DIN
SUPPLY CURRENT
ISB,ISB1
ICC,ICC1
ICC,ICC1
ICC,ICC1
Note: H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
Input High Voltage
SYMBOL
Vcc
VIH*1
Input Low Voltage
Input Leakage
Current
Output Leakage
Current
Output High
Voltage
Output Low
Voltage
Average Operating
Power supply
Current
VIL*2
ILI
Standby Power
Supply Current
ILO
TEST CONDITION
Vcc ≧ VIN ≧ Vss
VOH
VCC ≧ VOUT ≧ VSS,
Output Disabled
IOH = -1mA
VOL
IOL = 2mA
ICC
Cycle time = Min.
CE# = VIL , II/O = 0mA
ICC1
Cycle time = 1µs
CE#≦0.2V and II/O = 0mA
other pins at 0.2V or VCC-0.2V
CE# = VIH
CE# V ≧ VCC - 0.2V
-L
-LL
ISB
ISB1
-45
-55
-70
MIN.
2.7
2.0
TYP. *5
3.0
-
-0.2
-1
UNIT
V
V
-
MAX.
3.6
Vcc+
0.3
0.6
+1
-1
-
1
µA
2.2
2.7
-
V
-
-
0.4
V
-
40
30
20
4
50
40
30
5
mA
mA
mA
mA
-
0.3
20
2
0.5
80
15
mA
µA
µA
V
µA
Notes:
1. VIH(max) = VCC + 3.0V for pulse width less than 10ns.
2. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. 10µA for special request
5. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at VCC = VCC(TYP.) and TA = 25°C
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DCC-SR-041005-A
512Kx8 LP SRAM EM6112K800V Series
CAPACITANCE (TA = 25°C , f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN.
MAX.
6
8
-
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0.2V to VCC - 0.2V
3ns
1.5V
CL = 30pF + 1TTL, IOH/IOL = -1mA/2mA
AC ELECTRICAL CHARACTERISTICS
READ CYCLE
PARAMETER
SYM.
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low-Z
Output Enable to Output in Low-Z
Chip Disable to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
tRC
tAA
tACE
tOE
tCLZ*
tOLZ*
tCHZ*
tOHZ*
tOH
WRITE CYCLE
PARAMETER
SYM.
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High-Z
MIN.
45
10
5
10
70
MAX.
70
70
35
25
25
-
UNIT
MIN.
70
10
5
10
-55
MAX.
20
70
MAX.
25
UNIT
MIN.
70
60
60
0
55
0
30
0
5
-
MIN.
55
10
5
10
-45
MAX.
15
MIN.
55
50
50
0
45
0
25
0
5
-
MIN.
45
40
40
0
35
0
20
0
5
-
tWC
tAW
tCW
tAS
tWP
twr
tDW
tDH
tOW*
tWHZ*
-55
MAX.
55
55
30
20
20
-
-45
MAX.
45
45
25
15
15
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*These parameters are guaranteed by device characterization, but not production tested.
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DCC-SR-041005-A
512Kx8 LP SRAM EM6112K800V Series
TIMING WAVEFORMS
READ CYCLE 1 (Address Controlled) (1,2)
tRC
Address
tAA
Dout
tOH
Previous Data Valid
Data Valid
READ CYCLE 2 (CE#, CE2 and OE# controlled) (1,3,4,5)
tRC
Address
tAA
CE#
tACE
OE#
tOH
tOE
tOLZ
tCLZ
Dout
tOHZ
tCHZ
Valid Data
High-Z
Notes :
1.WE# is high for read cycle.
2.Device is continuously selected OE# = low, CE# = low.
3.Address must be valid prior to or coincident with CE# = low; otherwise tAA is the limiting parameter.
4.tCLZ, tOLZ, tCHZ and tOHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
5.At any given temperature and voltage condition, tCHZ is less than tCLZ , tOHZ is less than tOLZ.
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DCC-SR-041005-A
512Kx8 LP SRAM EM6112K800V Series
WRITE CYCLE 1 (WE# Controlled) (1,2,3,5,6)
tWC
Address
tAW
CE#
tCW
WE#
tAS
tWP
tWR
tWHZ
Dout
tOW
(4)
(4)
tDW
tDH
High-Z
Din
Valid Data
WRITE CYCLE 2 (CE# Controlled) (1,2,5,6)
tWC
Address
tAW
CE#
tAS
tWR
tCW
tWP
WE#
tWHZ
High-Z
Dout
tDW
tDH
High-Z
Din
Valid Data
Notes :
1. WE#, CE# must be high during all address transitions.
2. A write occurs during the overlap of a low CE#, low WE#.
3. During a WE# controlled write cycle with OE# low, tWP must be greater than tWHZ + tDW to allow the drivers to turn off and
data to be placed on the bus.
4. During this period, I/O pins are in the output state, and input signals must not be applied.
5. If the CE# low transition occurs simultaneously with or after WE# low transition, the outputs remain in a high impedance state.
6. tOW and tWHZ are specified with CL = 5pF. Transition is measured ±500mV from steady state.
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DCC-SR-041005-A
512Kx8 LP SRAM EM6112K800V Series
DATA RETENTION CHARACTERISTICS
PARAMETER
VCC for Data
Retention
Data Retention
Current
Chip Disable to Data
Retention Time
Recovery Time
tRC* = Read Cycle Time
SYMBOL
VDR
TEST CONDITION
CE# V ≧ VCC - 0.2V
IDR
VCC = 1.5V
CE# V ≧ VCC - 0.2V
tCDR
See Data Retention
Waveforms (below)
tR
-L
-LL
-LLE
-LLI
MIN.
1.5
TYP.
-
MAX.
3.6
UNIT
V
-
1
0.5
0.5
50
8
12
µA
µA
µA
0
-
-
ns
tRC*
-
-
ns
DATA RETENTION WAVEFORM
VDR ≧ 1.5V
Vcc
Vcc(min.)
Vcc(min.)
tR
tCDR
CE# ≧ Vcc-0.2V
CE#
VIH
VIH
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DCC-SR-041005-A
512Kx8 LP SRAM EM6112K800V Series
PACKAGE OUTLINE DIMENSION
32 pin 450 mil SOP Package Outline Dimension
32 pin 8mm x 20mm TSOP-I Package Outline Dimension
9
DCC-SR-041005-A
512Kx8 LP SRAM EM6112K800V Series
32 pin 8mm x 13.4mm STSOP Package Outline Dimension
10
DCC-SR-041005-A
512Kx8 LP SRAM EM6112K800V Series
36-ball 6mm × 8mm TFBGA Package Outline Dimension
11
DCC-SR-041005-A
512Kx8 LP SRAM EM6112K800V Series
Product ID Information
EM
61
12K
SRAM
Family
61: Standard
8
0
0
V
B
A
– 45
IF*
Version
Option
Configuration: Option
8: x8
Voltage:
16: x16
V: 3V
W: 2.7V
Address Density
~5.5V
12K: 512K
EOREX
T: 5V
Package:
Manufactured
S: STSOP
Memory
P: PDIP
F: SOP
B: TFBGA
T: TSOP
I: TSOP-I
Speed:
45ns
55ns
70ns
TEMP:
Blank: Normal
I: Industrial
Pb-Free PKG:
Blank: Normal
F: Pb-free
* Product ID example
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DCC-SR-041005-A
512Kx8 LP SRAM EM6112K800V Series
©COPYRIGHT 2004 EOREX CORPORATION
Printed in Canada
The information in this document is subject to change without notice.
EOREX makes no commitment to update or keep current the information contained in this document. No part of this document
may be copied or reproduced in any form or by any means without the prior written consent of EOREX.
EOREX subjects its products to normal quality control sampling techniques which are intended to provide an assurance of high
quality products suitable for usual commercial applications.
EOREX CORPORATION
http://www.eorex.com
[email protected]
2F., No. 301-3, Guang-Ming 6th Rd., Chu-Pei City, Hsinchu County, Taiwan 302, ROC
TEL: +886-3-5585138
FAX: +886-3-5585139
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DCC-SR-041005-A
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