EMLSI EM623FS16E10S 256k x8 bit low power and low voltage full cmos static ram Datasheet

EM620FV8B Series
Low Power, 256Kx8 SRAM
Document Title
256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
History
Draft Date
0.0
Initial Draft
June 7, 2007
0.1
0.1 Revision
Remove BYTE option information
June 15, 2007
0.2
0.2 Revision
Remove UB, LB information
June 21, 2007
0.3
0.3 Revision
Revised VOH(2.2v to 2.4v),tOH(15ns to 10ns),
tOE-55(30ns to 25ns), tWP-55(45ns to 40ns),
tWP-70(55ns to 50ns), tWHZ-70(25ns to 20ns),
ICC(2mA to 3mA), ICC1(2mA to 3mA)
July 2, 2007
0.4
0.4 Revision
VIH level change from 2.0V to 2.2V
Aug. 16, 2007
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
Remark
Zip Code : 690-719
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
EM620FV8B Series
Low Power, 256Kx8 SRAM
256K x8 Bit Low Power and Low Voltage CMOS Static RAM
FEATURES
- Process Technology : 0.15µm Full CMOS
- Organization :256K x8
- Power Supply Voltage
=> EM620FV8B : 2.7~3.6V
- Low Data Retention Voltage : 1.5V
- Three state output and TTL Compatible
- Packaged product designed for 45/55/70ns
29
56
EM620FV8B (Dual C/S)
+
GENERAL PHYSICAL SPECIFICATIONS
- Backside die surface of polished bare silicon
- Typical Die Thickness = 725um +/-15um
- Typical top-level metallization :
=> Metal (Ti/AlCu/TiN/ARC SiON/SiO2) : 5.2K Angstroms
- Topside Passivation :
=> Passivation (HDP/pNIT/PIQ) : 5.4K Angstroms
- Wafer diameter : 8 inch
(0.0)
EMLSI LOGO
1
OPTIONS
- C1/W1 : DC Probed Die/Wafer @ Hot Temp
- C2/W2 : DC/AC Probed Die/Wafer @ Hot Temp
28
y
x
Pre-charge Circuit
PAD DESCRIPTIONS
Function
Name
Function
CS1,CS2
Chip select inputs
Vcc
Power Supply
OE
Output Enable input
Vss
Ground
WE
Write Enable input
NC
No Connection
A0~A17
Address Inputs
I/O0~I/O7
Data Inputs/Outputs
VCC
Row Select
Name
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
I/O0 ~ I/O7
Data
Cont
VSS
Memory Array
1024 x 2048
I/O Circuit
Column Select
A10 A11 A12 A13 A14 A15 A16 A17
WE
OE
CS1
Control Logic
CS2
BONDING INSTRUCTIONS
The 2M full CMOS SRAM die has total 56pads. Refer to the bond pad location and identification table for X, Y coordinates.
EMLSI recommends using a bond wire on back side of die onto Vss bond pad for improved noise immunity.
2
EM620FV8B Series
Low Power, 256Kx8 SRAM
FUNCTIONAL SPECIFICATIONS
There are 3 classifications for EMLSI die and wafers products, which are C1 and C2 for die and W1 and W2 for wafer, respectively.
Each die and wafer support dedicated characteristics and probe the electrical parameters within their specifications. Followings are
brief information for die and wafer classifications. Please refer to packaged specifications for more information but these parameters
are not guaranteed at bare die and wafer.
− C1 LEVEL DIE OR W1 LEVEL WAFER
The DC parameters are measured by specification for C1 level die or W1 level wafer. The DC parameters measured at 70°C temperature, which called ‘Hot DC Sorting’ Other parameters are not guaranteed and warranted including device reliability. Please refer
to qualification report for device reliability and package level datasheets for electrical parameters.
− C2 LEVEL DIE OR W2 LEVEL WAFER
The DC parameters and selected AC parameters are measured with for C2 level die or W2 level wafer. The DC characteristics of C2
die and W2 wafer is tested based on DC specifications of C1 level die and W1 level wafer. The DC and specified AC parameters are
tested at 70°C temperature, which called ‘Hot DC & Selective AC Sorting’. Other parameters are not guaranteed and warranted
including device reliability. Please refer to qualification report for device reliability and package level datasheets for electrical parameters.
C2 level die and W2 level wafer probe following AC parameter.
− tRC, tAA, tCO
− tWC, tCW
PACKAGING
Individual device will be packed in anti-static trays.
− Chip Trays : A 2-inch square waffle style carrier for die with separate compartments for each die. Commonly referred to as a waffle
pack, each tray has a cavity size selected for the device that allows for easy loading and unloading and prevents
rotation. The tray itself is made of conductive material to reduce the danger of damage to the die from electrostatic
discharge. The chip carriers will be labeled with the following information :
− EMLSI wafer lot number
− EMLSI part number
− Quantity
− Jar Packing : Jar packing is made by EMLSI and used by many customers that we deliver the requested die as wafer. The pack is
consisted of clean paper to wrap the wafer, high cushioned sponge between wafers and hardly fragile plastic box with sponge. Each
pack has typically 24 wafers and then several packs are put into larger box depending on amounts of wafers.
Bond Pad #1 at Top
Die orientation in chip carriers
STORAGE AND HANDLING
EMLSI recommends the die stored in a controlled environment with filtered nitrogen. The carrier must be opened at ESD safe
environment when inspection and assembly.
3
EM620FV8B Series
Low Power, 256Kx8 SRAM
ABSOLUTE MAXIMUM RATINGS *
Parameter
Symbol
Voltage on Any Pin Relative to Vss
Minimum
Unit
VIN, VOUT
-0.2 to 4.0V
V
Voltage on Vcc supply relative to Vss
VCC
-0.2 to 4.0V
V
Power Dissipation
PD
1.0
W
Operating Temperature
TA
-40 to 85
o
C
* Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device. Functional oper-
ation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
FUNCTIONAL DESCRIPTION
CS1
CS2
OE
WE
I/O0-7
Mode
Power
H
X
X
X
High-Z
Deselected
Stand by
X
L
X
X
High-Z
Deselected
Stand by
X
X
X
X
High-Z
Deselected
Stand by
L
H
H
H
High-Z
Output Disabled
Active
L
H
H
H
High-Z
Output Disabled
Active
L
H
L
H
Data Out
Read
Active
L
H
X
L
Data In
Write
Active
Note: X means don’t care. (Must be low or high state)
4
EM620FV8B Series
Low Power, 256Kx8 SRAM
RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
2.7
3.3
3.6
V
Ground
VSS
0
0
0
V
Input high voltage
VIH
2.2
-
VCC + 0.22)
V
Input low voltage
VIL
-0.23)
-
0.6
V
1.
2.
3.
4.
TA= -40 to 85oC, otherwise specified
Overshoot: VCC +2.0 V in case of pulse width < 20ns
Undershoot: -2.0 V in case of pulse width < 20ns
Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f =1MHz, TA=25oC)
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
8
pF
Input/Ouput capacitance
CIO
VIO=0V
-
10
pF
1. Capacitance is sampled, not 100% tested.
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
VIN=VSS to VCC
-1
-
1
uA
Output leakage current
ILO
CS1=VIH or CS2=VIL or OE=VIH or WE=VIL
VIO=VSS to VCC
-1
-
1
uA
Operating power supply
ICC
IIO=0mA, CS1=VIL, CS2=WE=VIH, VIN=VIH or VIL
-
-
3
mA
ICC1
Cycle time=1µs, 100% duty, IIO=0mA,
CS1<0.2V, CS2>VCC-0.2V,
VIN<0.2V or VIN>VCC-0.2V
-
-
3
mA
45ns
-
-
35
ICC2
Cycle time = Min, IIO=0mA, 100% duty,
CS1=VIL, CS2=VIH,
VIN=VIL or VIH
55ns
-
-
30
70ns
-
-
25
Average operating current
mA
Output low voltage
VOL
IOL = 2.1mA
-
-
0.4
V
Output high voltage
VOH
IOH = -1.0mA
2.4
-
-
V
Standby Current (TTL)
ISB
-
-
0.3
mA
-
11)
10
uA
Standby Current (CMOS)
ISB1
CS1=VIH, CS2=VIL, Other inputs=VIH or VIL
CS1>VCC-0.2V, CS2>VCC-0.2V (CS controlled)
or 0V<CS2<0.2V (CS2 controlled),
Other inputs = 0~VCC
(Typ. condition : VCC=3.3V @ 25oC)
(Max. condition : VCC=3.6V @ 85oC)
NOTES
1. Typical values are measured at Vcc=3.3V, TA=25oC and not 100% tested.
5
LF
EM620FV8B Series
Low Power, 256Kx8 SRAM
AC OPERATING CONDITIONS
VTM3)
Test Conditions (Test Load and Test Input/Output Reference)
R12)
Input Pulse Level : 0.4 to 2.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : 1.5V
Output Load (See right) : CL1) = 100pF + 1 TTL
CL1) = 30pF + 1 TTL (only 45ns part)
1. Including scope and Jig capacitance
2. R1=3070 ohm,
R2=3150 ohm
3. VTM=2.8V
R22)
CL1)
READ CYCLE (Vcc = 2.7V to 3.6V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
Symbol
45ns
55ns
70ns
Min
Max
Min
Max
Min
Max
Unit
Read cycle time
tRC
45
-
55
-
70
-
ns
Address access time
tAA
-
45
-
55
-
70
ns
Chip select to output
tCO1, tCO2
-
45
-
55
-
70
ns
tOE
-
25
-
25
-
35
ns
tLZ1, tLZ2
10
-
10
-
10
-
ns
Output enable to low-Z output
tOLZ
5
-
5
-
5
-
ns
Chip disable to high-Z output
tHZ1, tHZ2
0
20
0
20
0
25
ns
Output disable to high-Z output
tOHZ
0
15
0
20
0
25
ns
Output hold from address change
tOH
10
-
10
-
10
-
ns
Output enable to valid output
Chip select to low-Z output
WRITE CYCLE (Vcc = 2.7V to 3.6V, Gnd = 0V, TA = -40oC to +85oC)
Parameter
Symbol
45ns
55ns
70ns
Unit
Min
Max
Min
Max
Min
Max
tWC
45
-
55
-
70
-
ns
tCW1, tCW2
45
-
45
-
60
-
ns
Address setup time
tAS
0
-
0
-
0
-
ns
Address valid to end of write
tAW
45
-
45
-
60
-
ns
Write pulse width
tWP
35
-
40
-
50
-
ns
Write recovery time
tWR
0
-
0
-
0
-
ns
Write to ouput high-Z
tWHZ
0
15
0
20
0
20
ns
Data to write time overlap
tDW
25
Data hold from write time
tDH
0
-
0
-
0
-
ns
End write to output low-Z
tOW
5
-
5
-
5
-
ns
Write cycle time
Chip select to end of write
6
25
30
ns
EM620FV8B Series
Low Power, 256Kx8 SRAM
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH)
tRC
Address
tAA
tOH
Data Out
Data Valid
Previous Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE = VIH)
tRC
Address
tAA
tOH
tCO
CS1
CS2
tHZ
tOE
OE
Data Out
High-Z
tOHZ
tOLZ
Data Valid
tWHZ
tLZ
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the outputs achieve the open circuit conditions and are not referenced to output voltage levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
7
EM620FV8B Series
Low Power, 256Kx8 SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (WE CONTROLLED)
tWC
Address
tCW(2)
tWR(4)
CS1
CS2
tAW
tWP(1)
WE
tAS(3)
Data in
tDW
High-Z
High-Z
Data Valid
tWHZ
Data out
tDH
tOW
Data Undefined
TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 CONTROLLED)
tWC
Address
tAS(3)
tCW(2)
tWR(4)
CS1
CS2
tAW
tWP(1)
WE
tDW
Data in
Data out
Data Valid
High-Z
High-Z
8
tDH
EM620FV8B Series
Low Power, 256Kx8 SRAM
TIMING WAVEFORM OF WRITE CYCLE(3) (CS2 CONTROLLED)
tWC
Address
tCW(2)
tWR(4)
CS1
tAS(3)
CS2
tAW
tWP(1)
WE
tDW
Data in
Data out
tDH
Data Valid
High-Z
High-Z
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(tWP) of low CS1, a high CS2 and low WE. A write begins at the latest
transition among CS1 goes low, CS2 goes high and WE goes low. A write ends at the earliest transition
when CS1 goes high, CS2 goes high and WE goes high. The tWP is measured from the beginning of write
to the end of write.
2. tCW is measured from the CS1 going low to end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the end or write to the address change. tWR applied in case a write ends as CS1
or WE going high.
9
EM620FV8B Series
Low Power, 256Kx8 SRAM
DATA RETENTION CHARACTERISTICS
Parameter
Symbol
VCC for Data Retention
VDR
Data Retention Current
IDR
Chip Deselect to Data Retention Time
tSDR
Operation Recovery Time
tRDR
Test Condition
ISB1 Test Condition
(Chip Disabled) 1)
VCC=1.5V, ISB1 Test Condition
(Chip Disabled) 1)
See data retention wave form
Min
Typ2)
Max
Unit
1.5
-
3.6
V
-
0.5
-
µA
0
-
-
tRC
-
-
NOTES
1. See the ISB1 measurement condition of data sheet page 5.
2. Typical value is measured at TA=25oC and not 100% tested.
DATA RETENTION WAVE FORM
tSDR
Data Retention Mode
tRDR
Vcc
3.0V
2.2V
VDR
CS1 > Vcc-0.2V
CS1
GND
Data Retention Mode
Vcc
3.0V
CS2
tRDR
tSDR
VDR
0.4V
CS2 < 0.2V
GND
10
ns
EM620FV8B Series
Low Power, 256Kx8 SRAM
SRAM PART CODING SYSTEM
EM X XX X X X XX X X - XX XX
1. EMLSI Memory
11. Power
2. Product Type
10. Speed
3. Density
4. Function
9. Package
5. Technology
8. Generation
6. Operating Voltage
7. Organization
1. Memory Component
EM --------------------- Memory
7. Organization
8 ---------------------- x8 bit
16 ---------------------- x16 bit
2. Product Type
6 ------------------------ SRAM
8. Generation
Blank ----------------- 1st generation
A ----------------------- 2nd generation
B ----------------------- 3rd generation
C ----------------------- 4th generation
D ----------------------- 5th generation
E ----------------------- 6th generation
F ----------------------- 7th generation
G ---------------------- 8th generation
3. Density
1 ------------------------- 1M
2 ------------------------- 2M
4 ------------------------- 4M
8 ------------------------- 8M
4. Function
0 ----------------------- Dual CS
1 ----------------------- Single CS
2 ----------------------- Multiplexed
3 ------------- Single CS / LBB, UBB(tBA=tOE)
4 ------------- Single CS / LBB, UBB(tBA=tCO)
5 ------------- Dual CS / LBB, UBB(tBA=tOE)
6 ------------- Dual CS / LBB, UBB(tBA=tCO)
9. Package
Blank ---------------- KGD, 48&36FpBGA
S ---------------------- 32sTSOP1
T ---------------------- 32 TSOP1
U ---------------------- 44 TSOP2
10. Speed
45 ---------------------55 ---------------------70 ---------------------85 ---------------------10 ---------------------12 ----------------------
5. Technology
F ------------------------- Full CMOS
6. Operating Voltage
T ------------------------- 5.0V
V ------------------------- 3.3V
U ------------------------- 3.0V
S ------------------------- 2.5V
R ------------------------- 2.0V
P ------------------------- 1.8V
45ns
55ns
70ns
85ns
100ns
120ns
11. Power
LL ---------------------- Low Low Power
LF ---------------------- Low Low Power(Pb-Free & Green)
L ---------------------- Low Power
S ---------------------- Standard Power
11
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