EMLSI EM742SP16EW-45L 256k x 16bit multiplexed single transistor ram Datasheet

EM742SP16
256Kx16 Multiplexed STRAM
Document Title
256K x 16Bit Multiplexed Single Transistor RAM
Revision History
Revision No.
History
Draft Date
Remark
December 21 , 2006
Preliminary
0.0
Initial Draft
0.1
1’st Revision
Add to pad coordinate
March 07, 2007
Preliminary
0.2
2’nd Revision
Product code chang from
EM742SP16AW to EM742SP16
March 20, 2007
Preliminary
0.3
3’rd Revision
Valid address change from A18 to
A17
March 28, 2007
Priliminary
0.4
4’ th Revision
Remove configure register sets at
functional descripition table
May 9, 2007
Priliminary
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea
Tel : +82-64-740-1700 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
Zip Code: 690-717
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1
EM742SP16
256Kx16 Multiplexed STRAM
256K x16 Bit Multiplexed Single Transistor RAM
FEATURES
- Process Technology : 0.13µm CMOS process
- Organization :256K x16
- Power Supply Voltage : 1.7~1.9V
- Multiplexed address and data bus
- Three state outputs
- Auto TCSR for power saving
GENERAL WAFER SPECIFICATIONS
- Deep trench process
- 3 Metal layers including local inter-connection
- Wafer diameter : 8-inch
PAD DESCRIPTION
Name
Function
Name
Function
/CS
Chip select inputs
/LB
Lower byte (ADQ0~7)
/OE
Output enable input
/UB
Upper byte (ADQ8~15)
/WE
Write enable input
VCC
Power supply
/AVD
Address valid input
VCCQ
ADQi
Address/Data In-out
VSS(Q) Ground
Ai
Address inputs
NC
I/O Power supply
No connection
FUNCTION BLOCK DIAGRAM
/AVD
/CS
/UB
/LB
/WE
/OE
CONTROL
LOGIC
A16~A17
ADDRESS
DECODER
ADQ0~
ADQ15
Self-Refresh
CONTROL
ROW SELECT
COLUMN SELECT
ADDRESS/DATA
Multiplexer
Din/Dout BUFFER
Memory Array
256K X 16
I/O CIRCUIT
2
EM742SP16
256Kx16 Multiplexed STRAM
ABSOLUTE MAXIMUM RATINGS 1)
Parameter
Symbol
Minimum
Unit
Voltage on Any Pin Relative to Vss
VIN, VOUT
-0.2 to VCCQ+0.3V
V
Voltage on Vcc supply relative to Vss
VCC, VCCQ
-0.22) to 2.5V
V
Power Dissipation
Storage Temperature
Operating Temperature
PD
1.0
W
TSTG
-65 to 150
oC
TA
-25 to 85
oC
1. Stresses greater than those listed above “Absolute Maximum Ratings” may cause permanent damage to the device. Functional
operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. Undershoot at power-off : -1.0V in case of pulse width < 20ns
FUNCTIONAL DESCRIPTION
CS
OE
WE
LB
UB
AVD
ADQ0~15
A16~A17
Mode
Power
H
X
X
X
X
X
High-Z
X
Deselected
Stand by
L
H
H
X
X
H
High-Z
X
Output Disabled
Active
L
X
X
H
H
X
High-Z
X
Output Disabled
Active
L
H
H
H
H
L
Add. Input
Add. Input
Address Input
Active
L
L
H
L
H
H
Data Out
X
Lower Byte Read
Active
L
L
H
H
L
H
Data Out
X
Upper Byte Read
Active
L
L
H
L
L
H
Data Out
X
Word Read
Active
L
H
L
L
H
H
Data In
X
Lower Byte Write
Active
L
H
L
H
L
H
Data In
X
Upper Byte Write
Active
L
H
L
L
L
H
Data In
X
Word Write
Active
Note: X means don’t care. (Must be low or high state)
3
EM742SP16
256Kx16 Multiplexed STRAM
RECOMMENDED DC OPERATING CONDITIONS 1)
Parameter
Symbol
Min
Typ
Max
Unit
VCC
1.7
1.8
1.9
V
VCCQ
1.7
1.8
1.9
V
VSS, VSSQ
0
0
0
V
Input high voltage
VIH
VCCQ - 0.4
-
VCCQ + 0.22)
V
Input low voltage
VIL
-
0.4
V
Supply voltage
Ground
1.
2.
3.
4.
-0.23)
TA= -25 to 85oC, otherwise specified
Overshoot: VCC +1.0 V in case of pulse width < 20ns
Undershoot: -1.0 V in case of pulse width < 20ns
Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE1) (f =1MHz, TA=25oC)
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
8
pF
Input/Output capacitance
CIO
VIO=0V
-
10
pF
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
VIN=VSS to VCCQ , VCC=VCCmax
-1
-
1
uA
Output leakage current
ILO
CS=VIH or OE=VIH or WE=VIL ,
VIO=VSS to VCCQ , VCC=VCCmax
-1
-
1
uA
ICC1
Cycle time=1µs, 100% duty, IIO=0mA,
CS<0.2V, VIN<0.2V or VIN>VCCQ-0.2V
-
-
3
mA
ICC2
Cycle time = Min, IIO=0mA, 100% duty,
CS=VIL, VIN=VIL or VIH
-
-
25
mA
Output low voltage
VOL
IOL = 0.1mA, VCC=VCCmin
-
-
0.1
V
Output high voltage
VOH
IOH = -0.1mA, VCC=VCCmin
VCCQ-0.1
-
-
V
Standby Current (CMOS)
ISB1
-
-
60
uA
Average operating current
CS>VCCQ-0.2V, Other inputs = 0 ~ VCCQ
(Typ. condition : VCC=1.8V @ 25oC)
(Max. condition : VCC=1.9V @ 85oC)
1. Maximum Icc specifications are tested with VCC = VCCmax.
4
LL
EM742SP16
256Kx16 Multiplexed STRAM
AC OPERATING CONDITIONS
Test Conditions (Test Load and Test Input/Output Reference)
Dout
Input Pulse Level : 0.2V to VCCQ-0.2V
Input Rise and Fall Time : 5ns
Input and Output reference Voltage : VCCQ/2
CL1)
1)
Output Load (See right) : CL = 30pF
1. Including scope and Jig capacitance
AC CHARACTERISTICS (Vcc = 1.7 to 1.9V, Gnd = 0V, TA = -25C to +85oC)
Symbol
Parameter List
Common
Read
Write
Speed
Min
Max
Unit
AVD Low pulse
tAVD
15
1000
ns
Address setup to AVD rising edge
tAVDS
15
-
ns
Address hold from AVD rising edge
tAVDH
5
-
ns
Chip enable setup to AVD rising edge
tCSS
7
-
ns
AVD low to data valid time
tACC1
-
70
ns
Address access time
tACC2
-
70
ns
Chip enable to data output
tACC3
-
70
ns
Address disable to output enable
tADOE
0
-
ns
Output enable to valid output
tOE
-
25
ns
UB, LB enable to data output
tUBLBA
-
25
ns
UB, LB enable to low-Z output
tBLZ
5
-
ns
Output enable to low-Z output
tOLZ
5
-
ns
Chip disable to high-Z output
tHZ
-
15
ns
UB, LB disable to high-Z output
tBHZ
-
15
ns
Output disable to high-Z output
tOHZ
-
15
ns
AVD low to end of write
tACW1
70
-
ns
Address valid to end of write
tACW2
70
-
ns
Chip enable to end of write
tACW3
70
-
ns
Write pulse low
tWRL
45
-
ns
UB, LB valid to end of write
tBW
50
-
ns
Data to write time overlap
tDW
25
-
ns
Data hold from write time
tDH
0
-
ns
5
EM742SP16
256Kx16 Multiplexed STRAM
Device Operaton
The access is performed in two stages. The first stage is address latching. The first stage take place between point A and
B in timing diagram. At this stage, the Chip Select(CS) to the device is asserted. The random access is enabled either
from the point the address becomes stable, the falling edge of the AVD signal or from the falling edge of the last chip
select signal. The second stage is the read or write access. This takes place between points B and C in timing diagram.
In case of a read access, the multiplexed address/data bus (ADQ0 ~ ADQ15) changes its direction. It is important to notice
tOE when it is dominant that the device gets into the read cycle since the address is available long before the device
output is enabled.
Read Access
The read access is initiated by applying the address to the multiplexed address/data bus or to the address bus over A15
(A16 -> Axx). When the address is stable, the device chip select(CS) is set active low. At point A, the AVD signal is taken
low and the latch becomes transparent. This allows the address to be propagated to the memory array. The address is
stable at the rising edge of the AVD signal. The AVD signal goes high at point B in which the address latch is completed.
At this point the read cycle is entered. The OE signal is set active low. This changes the direction of the bus. The status
of control signals UB and LB are set according to the access. Data is read at point C.
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE (1) ( WE = VIH )
A
C
B
tAVD
AVD
tAVDS
Address/Data
tACC1
tAVDH
Address Valid
Data Valid
tACC2
tADOE
tOLZ
OE
tOHZ
tOE
tCSS
CS
tHZ
tACC3
tBLZ
UB, LB
tBHZ
tUBLBA
6
EM742SP16
256Kx16 Multiplexed STRAM
TIMING WAVEFORM OF READ CYCLE (2) ( WE = VIH )
A
C
B
tAVD
AVD
tAVDS
Address/Data
tAVDH
Address Valid
tACC2
OE
Data Valid
tOLZ
tOHZ
tOE
tCSS
tHZ
CS
tBLZ
tUBLBA
tBHZ
UB, LB
NOTES (READ CYCLE)
1. tHZ and tBHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to
output voltage levels.
7
EM742SP16
256Kx16 Multiplexed STRAM
Write Access
The write access is initiated by applying the address to the multiplexed address/data bus or to the address bus over A15
(A16 -> Axx). When the address is stable, the device chip select(CS) is set active low. At point A, the AVD signal is taken
low and the latch becomes transparent. This allows the address to be propagated to the memory array. The address is
stable at the rising edge of the AVD signal. The AVD signal goes high at point B in which the address latch is completed.
At this point, the second stage of the write process is entered. Data is input to the multiplexed address/data bus. The WE
signal is set low and control signal UB and LB are set according to the access.
TIMING WAVEFORM OF WRITE CYCLE (1) (OE = VIH)
A
C
B
tAVD
AVD
tACW1
tAVDS
Address/Data
tAVDH
Data Valid
Address Valid
tACW2
tDW
tWRL
tDH
WE
tCSS
tACW3
CS
tBW
UB, LB
TIMING WAVEFORM OF WRITE CYCLE (2) (OE = VIH)
A
C
B
tAVD
AVD
tAVDS
Address/Data
tAVDH
Data Valid
Address Valid
tACW2
tWRL
tDW
tDH
WE
tCSS
CS
tBW
UB, LB
NOTES (WRITE CYCLE)
1. A write occurs during the overlap(tWRL) of low CS, low WE and low UB or LB. A write begins at the last transition among low CS and
low WE with asserting UB or LB low for single byte operation or simultaneously asserting UB and LB low for word operation. A write
ends at the earliest transition among high CS and high WE. The tWRL is measured from the beginning of write to the end of write.
8
EM742SP16
256Kx16 Multiplexed STRAM
TIMING WAVEFORM OF POWER UP
200us
VCC(Min.)
VCC
CS
Power Up Mode
Normal Operation
NOTE . ( POWER UP )
1. After Vcc reaches Vcc(Min.) , wait 200us with CS high. Then you get into the normal operation.
TCSR (Temperature Cotrolled Self Refresh)
The 4M STRAM can be operated with temperature controlled self-refresh. The device internal self-refresh period is
controlled according as temperature change automatically.
9
EM742SP16
256Kx16 Multiplexed STRAM
MEMORY FUNCTION GUIDE
EM X XX X X X XX X X - XX XX
1. EMLSI Memory
11. Power
2. Device Type
10. Speed
3. Density
4. Option
9. Packages
5. Technology
8. Version
6. Operating Voltage
7. Organization
1. Memory Component
7. Organization
8 ---------------------- x8 bit
16 ---------------------- x16 bit
32 ---------------------- x32 bit
2. Device Type
6 ------------------------ Low Power SRAM
7 ------------------------ STRAM
8. Version
Blank ----------------A ----------------------B ----------------------C ----------------------D ----------------------E -----------------------
3. Density
1 ------------------------- 1M
2 ------------------------- 2M
4 ------------------------- 4M
8 ------------------------- 8M
16 ----------------------- 16M
32 ----------------------- 32M
64 ----------------------- 64M
Mother die
First version
Second version
Third version
Fourth version
Fifth version
9. Package
Blank ----------------- Package
W ----------------------- Wafer
4. Function
0 ----------------------- Dual CS
1 ----------------------- Single CS
2 ----------------------- Multiplexed
10. Speed
45 ---------------------- 45ns
55 ---------------------- 55ns
70 ---------------------- 70ns
85 ---------------------- 85ns
90 ---------------------- 90ns
10 --------------------- 100ns
12 --------------------- 120ns
5. Technology
Blank ----------------- CMOS
F ------------------------ Full CMOS
S ------------------------ Single Transistor
6. Operating Voltage
Blank ------------------ 5V
V ------------------------- 3.3V
U ------------------------- 3.0V
S ------------------------- 2.5V
R ------------------------- 2.0V
P ------------------------- 1.8V
O ------------------------- 1.5V
11. Power
LL --------------------- Low Low Power
L ---------------------- Low Power
S ---------------------- Standard Power
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