Rectron EMD4S Single-phase glass passivated mini super fast surface mount bridge rectifier Datasheet

EMD1S
RECTRON
THRU
SEMICONDUCTOR
TECHNICAL SPECIFICATION
EMD4S
SINGLE-PHASE GLASS PASSIVATED
MINI SUPER FAST SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 200 Volts CURRENT 0.5 Ampere
FEATURES
*
*
*
*
*
*
*
Surge overload rating - 30 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Glass passivated device
Polarity symbols molded on body
Mounting position: Any
Weight: 0.5 gram
MD-S
MECHANICAL DATA
1
2
3
4
* Epoxy : Device has UL flammability classification 94V-0
M D
0.106(2.7)
0.091(2.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
0.152(3.6)
0.006(0.15)
0.193(4.9)
0.177(4.5)
For capacitive load, derate current by 20%.
0.157(4.0)
0.014(0.35)
o
Single phase, half wave, 60 Hz, resistive or inductive load.
0.157(4.0)
0.145(3.6)
2.756(7.0)
0.108(2.74)
0.092(2.34)
0.193(4.9)
0.177(4.5)
0.260(6.6)
.004(0.10) MAX.
0.028(0.9)
0.020(0.5)
Dimensions in millimeters
o
MAXIMUM RATINGS (At T A = 25 C unless otherwise noted)
SYMBOL
EMD1S
EMD2S
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
150
Maximum RMS Bridge Input Voltage
VRMS
35
70
Maximum DC Blocking Voltage
VDC
50
100
RATINGS
Maximum Average Forward Output Rectified
Current at T A = 30oC
- on glass-epoxy P.C.B. ( NOTE 1 )
- on aluminum substrate ( NOTE 2 )
EMD4S
UNITS
200
Volts
105
140
Volts
150
200
Volts
EMD3S
Amp
0.5
IO
0.8
Peak Forward Surge Current 8.3 ms single half sine-wave
I FSM
superimposed on rated load (JEDEC method)
Typical Junction Capacitance ( Note 5 )
Operating and Storage Temperature Range
20
Amps
pF
CJ
15
T J, T STG
-55 to + 150
0
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
Maximum Forward Voltage Drop per Bridge Element at 0.5A DC
Maximum Reverse Current at rated
@T A = 25 o C
DC Blocking Voltage per element
@T A = 125 oC
Maximum Reverse Recovery Time (Note 4)
VF
IR
trr
EMD1S
EMD2S
EMD3S
EMD4S
UNITS
1.05
Volts
10
uAmps
0.5
mAmps
50
nSec
2002-4
NOTE: 1. On glass-epoxy P.C.B. mounted on 0.05 X 0.05” (1.3 X 1.3mm) pads.
2. On aluminum substrate P.C.B. with an area of 0.8 X 0.8 X 0.25” (20 X 20 X 6.4mm) mounted on 0.05 X 0.05” (1.27 X 1.27mm) solder pad.
3. Suffix “-S” Surface Mount for Mini Dip Bridge.
4. Test Conditions: IF=0.5A, IR =-1.0A, IRR=-0.25A.
5. Measured at 1MHz and applied reverse voltage of 4.0 volts.
RATING AND CHARACTERISTIC CURVES ( EMD1S THRU EMD4S )
10
NONINDUCTIVE
AVERAGE FORWARD CURENT, (A)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
trr
+0.5A
(-)
D.U.T
(+)
25 Vdc
(approx)
(-)
0
PULSE
GENERATOR
(NOTE 2)
1
NONINDUCTIVE
OSCILLOSCOPE
(NOTE 1)
-0.25A
(+)
-1.0A
1cm
NOTES:1 Rise Time = 7ns max. Input Impedance =
SET TIME BASE FOR
10 ns/cm
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
100
TJ = 150
10
TJ = 100
1.0
TJ = 25
.1
.01
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.5
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE (
)
10
1.0
TJ = 25
.1
Pulse Width = 300uS
1% Duty Cycle
.01
.001
0
20
40
60
80
100
120
0
140
JUNCTION CAPACITANCE, (pF)
30
8.3ms Single Half Sine-Wave
(JEDEC Method)
25
20
15
10
5
0
.4
.6
.8
1.0
1.2
1.4
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
35
.2
INSTANTANEOUS FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
PEAK FORWARD SURGE CURRENT, (A)
1.0
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS REVERSE CURRENT, (uA)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
200
100
60
40
20
10
TJ = 25
6
4
2
1
1
2
5
10
20
50
NUMBER OF CYCLES AT 60Hz
100
.1
.2
.4
1.0 2 4
10 20 40
REVERSE VOLTAGE, ( V )
RECTRON
100
Mounting Pad Layout
0.272 MAX.
(6.91 MAX.)
0.105 (2.67)
0.095 (2.41)
0.023 MIN.
(0.58 MIN.)
0.030 MIN.
(0.076 MIN.)
Dimensions in inches and (millimeters)
RECTRON
Similar pages