EMH2601 Ordering number : EN8731 SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFETs EMH2601 General-Purpose Switching Device Applications Features • • The EMH2601 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions N-channel P-channel Unit Drain-to-Source Voltage VDSS 20 --20 Gate-to-Source Voltage VGSS ±10 ±10 V 3 --2 A Drain Current (DC) ID Drain Current (Pulse) IDP PD PW≤10µs, duty cycle≤1% PT Tch Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg Allowable Power Dissipation Total Dissipation 12 Mounted on a ceramic board (900mm2✕0.8mm) 1unit --8 1.0 V A W 1.2 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS ID=1mA, VGS=0V VDS=20V, VGS=0V 20 VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.4 VDS=10V, ID=1.5A 2.4 V 1 µA ±10 µA 1.3 V 76 mΩ Forward Transfer Admittance VGS(off) yfs ID=1.5A, VGS=4V ID=0.8A, VGS=2.5V 58 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 71 99 mΩ ID=0.3A, VGS=1.8V VDS=10V, f=1MHz 98 150 mΩ Input Capacitance RDS(on)3 Ciss 365 pF Output Capacitance Coss VDS=10V, f=1MHz 77 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 67 pF Marking : FA 4.0 S Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71006PE MS IM TC-00000042 No.8731-1/6 EMH2601 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 11.2 Rise Time tr td(off) See specified Test Circuit. 45 ns See specified Test Circuit. 42 ns tf Qg See specified Test Circuit. 46 ns VDS=10V, VGS=4V, ID=3A 4.9 nC 0.7 nC Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A Diode Forward Voltage VSD IS=3A, VGS=0V ns 2.0 0.85 nC 1.2 V --1 µA ±10 µA [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0V VDS=--20V, VGS=0V Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VDS=0V Forward Transfer Admittance yfs RDS(on)1 VDS=--10V, ID=--1A Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Cutoff Voltage --20 VDS=--10V, ID=--1mA V --0.4 1.9 ID=--1A, VGS=--4V ID=--0.5A, VGS=--2.5V --1.4 3.2 V S 115 150 mΩ 165 235 mΩ 260 520 mΩ 420 pF Coss ID=--0.3A, VGS=1.8V VDS=--10V, f=1MHz VDS=--10V, f=1MHz 73 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 60 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11.8 ns Rise Time tr td(off) See specified Test Circuit. 33 ns See specified Test Circuit. 48 ns Input Capacitance Ciss Output Capacitance Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge See specified Test Circuit. 43 ns VDS=--10V, VGS=--4V, ID=--2A 4.7 nC 0.75 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--2A VDS=--10V, VGS=--4V, ID=--2A Diode Forward Voltage VSD IS=--2A, VGS=0V Package Dimensions unit : mm (typ) 7045-002 --0.83 7 6 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 4 0.5 2.1 0.2 1.7 5 1 0.05 0.75 2.0 V 5 0.125 0.2 0.2 nC --1.2 Electrical Connection 8 8 1.6 1 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 2 3 4 Top view SANYO : EMH8 No.8731-2/6 EMH2601 Switching Time Test Circuit [N-channel] [P-channel] VDD= --10V VIN VDD=10V VIN 0V --4V 4V 0V ID=1.5A RL=6.67Ω VIN D D VOUT G G EMH2601 V Drain Current, ID -- A V 3.0 --1.6 8.0V 2.0 1.5 1.0 --1.4 0V [Pch] 8V . --1 --2 . V --1.8 =1.5 VGS S ID -- VDS --2.0 1.8 2.5V 2.0 V 4.0V 6.0V [Nch] 50Ω --8.0V --6.0V ID -- VDS 3.0 Drain Current, ID -- A P.G S --4.0V --3.0 V --2. 5V EMH2601 50Ω 2.5 VOUT PW=10µs D.C.≤1% PW=10µs D.C.≤1% P.G ID= --1A RL=10Ω VIN --1.2 --1.0 --0.8 --0.6 --0.4 0.5 VGS= --1.5V --0.2 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V ID -- VGS 3.0 0.9 0 1.0 --0.2 --0.3 --0.4 --0.5 --0.6 [Nch] --0.7 --0.8 ID -- VGS --2.0 --0.9 --1.0 IT10538 [Pch] VDS= --10V VDS=10V 2.8 --1.8 2.6 --1.6 1.8 1.6 1.4 1.2 Ta= 7 0.6 0.4 0.2 0 0 0.5 1.0 --1.2 --1.0 --0.8 --0.6 --0.4 25° C 0.8 25°C --25° C 5 °C 1.0 --1.4 --0.2 0 1.5 Gate-to-Source Voltage, VGS -- V 2.0 IT10404 --25°C 2.0 5°C Drain Current, ID -- A 2.2 Ta= 7 2.4 Drain Current, ID -- A --0.1 Drain-to-Source Voltage, VDS -- V IT10403 0 --0.5 --1.0 --1.5 --2.0 Gate-to-Source Voltage, VGS -- V --2.5 IT10539 No.8731-3/6 EMH2601 RDS(on) -- VGS 700 Ta=25°C 180 160 140 1.5A 120 800mA 100 ID=300mA 80 60 40 20 ID= --0.3A 200 100 IT10405 RDS(on) -- Ta [Nch] 140 120 V =1.8 , VGS mA 300 I D= 100 V =2.5 , VGS 0mA 80 I D= 80 60 .5 I D=1 =4.0V A, VGS 40 20 --40 --20 0 20 40 60 80 100 120 140 °C 75 1.0 °C 25 7 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 --20 20 0 0.1 7 5 40 60 80 100 120 140 160 IT10541 yfs -- ID [Pch] VDS= --10V C 5° --2 = Ta °C 75 2 1.0 25 °C 7 5 3 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 IT10542 IS -- VSD --10 7 5 Source Current, IS -- A 25 °C --2 5°C 1.0 7 5 5°C --40 3 3 Ta= 7 100 5 [Nch] 2 [Pch] VGS=0V 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 3 2 0.01 0.3 = --2.5V A, V GS .5 0 -= ID = --4.0V A, V GS .0 1 -= ID 200 7 VGS=0V 3 2 A I D= --0.3 Ambient Temperature, Ta -- °C 5 7 10 IT10407 IS -- VSD [Pch] --1.8V , V GS= 300 0 --60 Forward Transfer Admittance, yfs -- S C 5° --8 IT10540 400 10 3 --6 RDS(on) -- Ta [Nch] 5 --2 --4 500 IT10406 yfs -- ID = Ta --2 Gate-to-Source Voltage, VGS -- V 160 VDS=10V 2 0 °C Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 300 8 6 Ambient Temperature, Ta -- °C Forward Transfer Admittance, yfs -- S --1.0A 400 --25 4 160 0 --60 Source Current, IS -- A --0.5A 500 25° C 2 180 10 7 5 Ta=25°C 600 Ta= 75° C 0 7 [Pch] 0 0 10 RDS(on) -- VGS [Nch] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 200 0.4 0.5 0.6 0.7 0.8 0.9 Diode Forward Voltage, VSD -- V 1.0 1.1 IT10408 --0.01 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V --1.1 IT10543 No.8731-4/6 EMH2601 SW Time -- ID 5 [Nch] 2 100 7 td(off) tf 5 3 2 tr td(on) 10 2 100 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 10 7 5 3 --0.01 7 [Nch] 2 3 5 7 --1.0 2 3 5 IT10544 [Pch] f=1MHz 5 Ciss Ciss Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF 7 --0.1 7 3 2 100 Coss 7 Crss 5 3 2 100 Coss 7 Crss 5 3 3 2 2 0 5 10 15 [Nch] 3.0 2.5 2.0 1.5 1.0 0.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Total Gate Charge, Qg -- nC IT10411 ASO [Nch] IDP=12A ≤10µs 10 m op er 1.0 7 5 3 2 Drain Current, ID -- A DC ati 10 on Operation in this area is limited by RDS(on). s 0m s (T a= 25 °C ) 0.1 7 5 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V --3.5 --2.5 --2.0 --1.5 --1.0 --0.5 3 2 5 IT10412 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Total Gate Charge, Qg -- nC IT10546 ASO [Pch] ≤10µs IDP= --8A 10 1 0µ 10 ms s m s ID= --2A DC 100m s op er ati on --1.0 7 5 3 2 Operation in this area is limited by RDS(on). --0.1 7 5 3 2 2 3 [Pch] --3.0 --10 7 5 0 1m µs s --20 IT10545 VGS -- Qg 2 10 ID=3A --15 VDS= --10V ID= --2A 0 0 0 0 --10 --4.0 Gate-to-Source Voltage, VGS -- V VDS=10V ID=3A 3.5 --5 Drain-to-Source Voltage, VDS -- V IT10410 VGS -- Qg 4.0 0 20 Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V 5 Ciss, Coss, Crss -- VDS 1000 f=1MHz 5 Drain Current, ID -- A 3 Drain Current, ID -- A 7 3 2 2 IT10409 Ciss, Coss, Crss -- VDS 1000 3 2 tr td(on) 5 5 0.01 10 7 5 td(off) tf 7 7 3 2 [Pch] VDD= --10V VGS= --4V 3 Switching Time, SW Time -- ns Switching Time, SW Time -- ns 3 SW Time -- ID 5 VDD=10V VGS=4V Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT10547 No.8731-5/6 EMH2601 PD -- Ta Allowable Power Dissipation, PD -- W 1.4 [Nch, Pch] Mounted on a ceramic board (900mm2✕0.8mm) 1.2 1.0 To t al 0.8 di ss 1u 0.6 nit ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10413 Note on usage : Since the EMH2601 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2006. Specifications and information herein are subject to change without notice. PS No.8731-6/6