EMP110 5.9 – 7.9 GHz Power Amplifier MMIC UPDATED 12/15/2004 FEATURES • • • • 5.9 – 7.9 GHz Operating Frequency Range 27.0dBm Output Power at 1dB Compression 19.0 dB Typical Small Signal Gain -41dBc OIMD3 @Each Tone Pout 17 dBm APPLICATIONS • • Dimension: 1130um X 2250um Thickness: 85um + 15um Point-to-point and point-to-multipoint radio Military Radar Systems Caution! ESD sensitive device. ELECTRICAL CHARACTERISTICS (Tb = 25 °C, 50 ohm, Vds = 7 V, Idsq = 400 mA, Unless Otherwise Specified) SYMBOL PARAMETER/TEST CONDITIONS F P1dB Gss OIMD3 Input RL Output RL MIN TYP MAX UNITS 7.9 GHz Operating Frequency Range 5.9 Output Power at 1dB Gain Compression 26.0 27.0 dBm Small Signal Gain Output 3rd Order Intermodulation Distortion @∆f=10MHz, Each Tone Pout 17dBm, 7V, 60%+10%Idss 16.0 19.0 dB -41 -38 dBc Input Return Loss -12 -8 dB Output Return Loss -6 Idss Saturated Drain Current Vds NF Vds =3V, VGS =0V 570 660 mA Drain to Source Voltage 7 8 V Noise Figure @7GHz 7 Rth Thermal Resistance (Au-Sn Eutectic Attach) Tb Operating Base Plate Temperature 490 dB dB o 22 - 35 C/W + 85 ºC 1,2 MAXIMUM RATINGS AT 25°C SYMBOL CHARACTERISTIC ABSOLUTE CONTINUOUS Vds Drain to Source Voltage 12V 8V VGS Gate to Source Voltage -8V -4V Ids Drain Current Idss 650mA IGSF Forward Gate Current 57mA 9.5 mA PIN Input Power 24dBm @ 3dB compression TCH Channel Temperature 175°C 150°C TSTG Storage Temperature -65/175°C -65/150°C 6.2W 5.2W PT Total Power Dissipation 1. Operating the device beyond any of the above rating may result in permanent damage. 2. Bias conditions must also satisfy the following equation Vds*Ids < (TCH –Tb)/RTH Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised December 2004 EMP110 5.9 – 7.9 GHz Power Amplifier MMIC UPDATED 12/15/2004 Typical Performance: 1. Small Signal Performance (@7V, 400mA) EMP110 Small Signal Performance 25 20 15 DB(|S[2,1]|) * 10 DB(|S[1,1]|) * 5 DB(|S[2,2]|) * 0 -5 -10 -15 -20 -25 4 2. OIMD VS Pout @7V, 400mA 6 8 Frequency (GHz) (@8GHz, ∆f=10MHz) 3. P-1 VS Vds @Idsq=400mA EMP110 P1dB(dBm) vs. Vds 30 29 28 27 OIMD3 -35 -40 -45 -50 -55 -60 -65 -70 OIMD5 dBm OIMD (dBc) EMP110 OIMD (dBc) vs. Pout(dBm) 0 -5 -10 -15 -20 -25 -30 10 Vds=7V 26 Vds=5V 25 24 23 22 0 5 10 15 20 Each Tone Pout (dBm) 25 5 6 7 8 9 Frequency (GHz) APPLICATION INFORMATION (CAUTION: THIS IS AN ESD SENSITIVE DEVICE) Chip carrier should match GaAs thermal coefficienat of expansion and have high thermal conductivity, such as copper tungsten or copper molybdenum. The chip carrier should be nickel-gold plated and capable of withstanding 325ºC for 20 minutes. Die attach should be done with Gold/Tin (80/20) eutectic alloy in inert ambient gas. The backside is used as heatsinking, DC, and RF contacts. All die attach and wire bond equipment, especially the tools which touch a die, should be well grounded to avoid accidental discharge through a die. Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 2 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised December 2004 EMP110 5.9 – 7.9 GHz Power Amplifier MMIC UPDATED 12/15/2004 ASSEMBLY DRAWING The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50 ohm line and separate the wires to minimize the mutual inductance. CHIP OUTLINE Chip Size 1130 x 2250 microns Chip Thickness: 85 ± 15 microns PAD Dimensions: 100 x 100 microns All Dimensions in Microns Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 3 of 3 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised December 2004