Rohm EMT2 General purpose (dual transistors) Datasheet

EMT2 / EMT3 / UMT2N / IMT2A / IMT3A
Transistors
General purpose (dual transistors)
EMT2 / EMT3 / UMT2N / IMT2A / IMT3A
!External dimensions (Units : mm)
!Features
1) Two 2SA1037AK chips in a EMT or UMT or SMT package.
0.22
(4)
(3)
(2)
(4)
(5)
(3)
(6)
IMT3A
(2)
(1)
(4)
(1)
1.2
1.6
(5)
0.5
EMT3
IMT2A
(1)
(2)
(6)
0.13
EMT2 / UMT2N
(3)
(5)
!Equivalent circuits
0.5 0.5
1.0
1.6
EMT2 / EMT3
(6)
Each lead has same dimensions
ROHM : EMT6
UMT2N
(1)
(2)
(6)
(1)
(5)
0.2
!Absolute maximum ratings (Ta=25°C)
Limits
Unit
1.25
Collector-base voltage
VCBO
−60
V
2.1
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−6
V
IC
150
mA
EMT2 / EMT3 / UMT2N
150(TOTAL)
PC
mW
300(TOTAL)
IMT2A / IMT3A
Junction temperature
Storage temperature
Tj
150
°C
Tstg
−55~+150
°C
0.7
0.1Min.
∗1
Each lead has same dimensions
∗2
ROHM : UMT6
EIAJ : SC-88
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Type
EMT2
EMT3
UMT2N
IMT2A
IMT3A
Package
EMT6
EMT6
UMT6
SMT6
SMT6
Marking
Code
T2
T2R
T3
T2R
T2
TR
T2
T108
T3
T108
0.15
(2)
(4)
(3)
(5)
0.3
!Package, marking, and packaging specifications
8000
8000
3000
3000
3000
0.3Min.
1.6
1.1
0.8
2.8
0~0.1
Basic ordering unit (pieces)
(1)
IMT2A / IMT3A
(6)
Collector power
dissipation
0~0.1
Collector current
0.15
Symbol
Parameter
1.3
(2)
2.0
(3)
0.9
(6)
0.65
(5)
0.65
(4)
(1)
(3)
(3) (2)
0.95 0.95
1.9
2.9
(6)
(4)
(4) (5)
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
!Electrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
−60
−
−
V
IC=−50µA
Collector-emitter breakdown voltage
BVCEO
−50
−
−
V
IC=−1mA
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
ICBO
−6
−
−
−
−
−0.1
V
µA
IE=−50µA
VCB=−60V
VEB=−6V
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
IEBO
−
−
−0.1
µA
VCE(sat)
−
−
−0.5
V
IC/IB=−50mA/−5mA
hFE
120
−
560
−
VCE=−6V, IC=−1mA
Transition frequency
fT
−
140
−
MHz
Output capacitance
Cob
−
4
5
pF
∗Transition frequency of the device.
Conditions
VCE=−12V, IE=2mA, f=100MHz
VCE=−12V, IE=0A, f=1MHz
∗
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