Sanyo ENA0851 N-channel silicon mosfet general-purpose switching device application Datasheet

ECH8653
Ordering number : ENA0851
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
ECH8653
General-Purpose Switching Device
Applications
Features
•
•
•
•
•
Low ON-resistance.
4V drive.
Best suited for LiB charging and discharging switch.
Common-drain type.
Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
Gate-to-Source Voltage
VGSS
±10
V
ID
7.5
A
Drain Current (DC)
Drain Current (Pulse)
V
IDP
PD
PW≤10µs, duty cycle≤1%
40
A
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
1.4
W
PT
Tch
Mounted on a ceramic board (900mm2✕0.8mm)
Channel Temperature
Storage Temperature
Tstg
Allowable Power Dissipation
Total Dissipation
1.5
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Marking : WY
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
Conditions
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4A
Ratings
min
typ
Unit
max
20
V
1.0
3.4
1
µA
±10
µA
2.4
5.8
V
S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
53007PE TI IM TC-00000702 No. A0851-1/4
ECH8653
Continued from preceding page.
Parameter
Symbol
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
Ratings
Conditions
min
ID=4A, VGS=8V
ID=4A, VGS=4V
typ
Unit
max
9
14
20
mΩ
11
18
25
mΩ
Input Capacitance
Ciss
VDS=10V, f=1MHz
1280
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
170
pF
Reverse Transfer Capacitance
Crss
pF
td(on)
VDS=10V, f=1MHz
See specified Test Circuit.
105
Turn-ON Delay Time
13
ns
Rise Time
tr
td(off)
See specified Test Circuit.
48
ns
See specified Test Circuit.
94
ns
tf
Qg
See specified Test Circuit.
36
ns
VDS=10V, VGS=8V, ID=7.5A
18.5
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=10V, VGS=8V, ID=7.5A
VDS=10V, VGS=8V, ID=7.5A
2.7
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VSD
IS=7.5A, VGS=0V
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Package Dimensions
3.1
0.82
8
7
6
5
1
2
3
4
Top View
0.25
2.9
0.15
5
2.3
0 to 0.02
2.8
V
Electrical Connection
unit : mm (typ)
7011A-003
8
nC
1.2
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
4
0.25
1
0.65
0.9
0.3
0.07
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
Bottom View
Switching Time Test Circuit
VDD=10V
VIN
8V
0V
ID=4A
RL=2.5Ω
VIN
D
VOUT
PW=10µs
D.C.≤1%
G
ECH8653
P.G
50Ω
S
No. A0851-2/4
ECH8653
ID -- VDS
4.0
3.5
3.0
2.5
2.0
1.5
0.1
0.2
0.3
0.4
0.5
Drain-to-Source Voltage, VDS -- V
Ta=25°C
ID=4A
70
60
50
40
30
20
10
2
4
6
8
2.0
2.5
A
I =4
=4V, D
VGS
=4A
8V, I D
V GS=
20
10
--40
--20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
5
140
160
IT12474
IS -- VSD
10
7
5
VDS=10V
3.0
IT12472
30
IT12473
yfs -- ID
10
1.5
RDS(on) -- Ta
0
--60
10
Gate-to-Source Voltage, VGS -- V
1.0
40
0
0
0.5
Gate-to-Source Voltage, VGS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
VGS=0V
3
1.0
°C
25
7
5
3
1.0
7
5
3
2
0.1
7
5
2
3
0.1
0.01
0.01
0.2
C
C
5°
--2
=
°C
Ta
75
2
2
--25°
Source Current, IS -- A
3
Ta=7
5°C
25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
IT12471
RDS(on) -- VGS
80
Forward Transfer Admittance, yfs -- S
3
0
0
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
5 7 10
IT12475
0.6
0.8
1.0
1.2
IT12476
Ciss, Coss, Crss -- VDS
3
VDD=10V
VGS=8V
f=1MHz
2
Ciss
Ciss, Coss, Crss -- pF
3
2
td(off)
100
7
5
tf
3
2
td(on)
10
7
5
tr
1000
7
5
3
Coss
2
Crss
100
3
2
1.0
0.01
0.4
Diode Forward Voltage, VSD -- V
SW Time -- ID
1000
7
5
Switching Time, SW Time -- ns
4
1
0.5
0
7
5
2
VGS=2.0V
1.0
6
25° -C 25°C
4.5
7
°C
5.0
8
Ta=7
5
5.5
9
8.0V
Drain Current, ID -- A
6.0
VDS=10V
V
2.5
Drain Current, ID -- A
6.0V
6.5
ID -- VGS
10
4.0V
5.0V
7.0
3.0
V
7.5
7
5
2
3
5 7 0.1
2
3
5 7 1.0
Drain Current, ID -- A
2
3
5 7 10
IT12477
0
2
4
6
8
10
12
14
16
Drain-to-Source Voltage, VDS -- V
18
20
IT12478
No. A0851-3/4
ECH8653
VGS -- Qg
7
5
3
2
VDS=10V
ID=7.5A
7
6
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
8
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
Total Gate Charge, Qg -- nC
20
IT12479
PD -- Ta
1.8
Allowable Power Dissipation, PD -- W
18
10
7
5
3
2
ASO
IDP=40A
ID=7.5A
DC
10
ms
10
op
0m
era
s
tio
n(
1.0
7
5
3
2
0.1
7
5
3
2
PW≤10µs
10
1m 0µs
s
Ta
=
25
Operation in this
area is limited by RDS(on).
°C
)
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
5
IT12480
Mounted on a ceramic board (900mm2✕0.8mm)
1.6
1.5
1.4
1.2
To
t
al
1.0
Di
ss
1u
0.8
ni
t
ip
ati
on
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT12481
Note on usage : Since the ECH8653 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of May, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0851-4/4
Similar pages