Sanyo ENA0888 N-channel silicon mosfet general-purpose switching device application Datasheet

CPH6438
Ordering number : ENA0888
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
CPH6438
General-Purpose Switching Device
Applications
Features
•
1.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
60
Gate-to-Source Voltage
VGSS
±10
V
ID
200
mA
PW≤10µs, duty cycle≤1%
800
mA
Mounted on a ceramic board (1200mm2✕0.8mm)
1.3
W
Drain Current (DC)
Drain Current (Pulse)
V
Allowable Power Dissipation
IDP
PD
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Symbol
V(BR)DSS
IDSS
IGSS
Conditions
ID=1mA, VGS=0V
VDS=60V, VGS=0V
Ratings
min
typ
Unit
max
60
VGS=±8V, VDS=0V
VDS=10V, ID=100µA
0.4
VDS=10V, ID=100mA
280
V
1
µA
±10
µA
Forward Transfer Admittance
VGS(off)
yfs
1.3
RDS(on)1
RDS(on)2
ID=100mA, VGS=4V
ID=50mA, VGS=2.5V
2.2
2.9
Ω
Static Drain-to-Source On-State Resistance
2.4
3.4
Ω
ID=10mA, VGS=1.8V
VDS=20V, f=1MHz
3.5
7.0
Input Capacitance
RDS(on)3
Ciss
26
pF
480
V
mS
Ω
Output Capacitance
Coss
VDS=20V, f=1MHz
5.9
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
3.2
pF
Marking : ZQ
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91907PE TI IM TC-00000905 No. A0888-1/4
CPH6438
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Turn-ON Delay Time
td(on)
See specified Test Circuit.
18.5
ns
Rise Time
tr
td(off)
See specified Test Circuit.
26
ns
See specified Test Circuit.
146
ns
tf
See specified Test Circuit.
69
ns
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Qg
nC
Qgs
VDS=30V, VGS=4V, ID=200mA
VDS=30V, VGS=4V, ID=200mA
1.0
Gate-to-Source Charge
0.20
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=30V, VGS=4V, ID=200mA
0.20
Diode Forward Voltage
VSD
IS=200mA, VGS=0V
0.83
Package Dimensions
4V
0V
0.15
2.9
0.6
VDD=30V
VIN
4
1.6
2.8
D
0.05
PW=10µs
D.C.≤1%
Rg
G
2
0.95
3
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
0.4
0.9
0.2
0.6
1
ID=200mA
RL=150Ω
VOUT
VIN
0.2
5
V
Switching Time Test Circuit
unit : mm (typ)
7018A-003
6
nC
1.2
CPH6438
P.G
50Ω
S
Rg=1.2kΩ
SANYO : CPH6
ID -- VDS
V
1.5
V
250
2.5
120
100
80
60
40
0
100
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
0.9
0
1.0
8
7
6
50mA
5
100mA
4
3
ID=10mA
1.5
2.0
2.5
IT11275
RDS(on) -- Ta
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
9
1.0
Gate-to-Source Voltage, VGS -- V
Ta=25°C
2
0.5
IT11274
RDS(on) -- VGS
10
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
150
50
VGS=1.0V
20
200
Ta
=7
5°C 25
°C
--25
°C
Drain Current, ID -- mA
140
8.0
Drain Current, ID -- mA
160
VDS=10V
V
180
ID -- VGS
300
2.0
V 6.0V
4.0V
200
6
5
mA
=10
, ID
V
5
=1.
VGS
mA
=50
V, I D
5
.
2
=
0mA
VGS
=10
I
D
,
V
=4.0
V GS
4
3
2
1
1
0
0
2
4
6
8
Gate-to-Source Voltage, VGS -- V
10
IT11276
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT11277
No. A0888-2/4
yfs -- ID
3
2
100
7
5
=
Ta
3
75
°C
°C
25
°C -5
2
2
10
7
5
3
2
1.0
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
0.4
0.5
0.6
0.7
5
3
td(off)
2
tf
100
7
5
3
tr
td(on)
1.0
1.1
IT11322
f=1MHz
Ciss
2
10
7
Coss
5
Crss
3
1.0
2
3
5 7 0.01
2
3
5 7 0.1
2
3
5 7
0
5
10
15
20
25
30
35
40
45
50
55
Drain-to-Source Voltage, VDS -- V
IT11279
VGS -- Qg
1.0
60
IT11280
ASO
2
VDS=30V
ID=200mA
3.5
0.9
2
Drain Current, ID -- A
4.0
0.8
Ciss, Coss, Crss -- VDS
3
7
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
1.0
7
5
3
2
5
1000
10
0.001
IDP=0.8A
PW≤10µs
7
Drain Current, ID -- A
0.6
0.7
0.8
0.9
Total Gate Charge, Qg -- nC
1.0
IT11281
PD -- Ta
1.4
)
°C
0.5
25
0.4
s
0.3
s
0.2
0µ
0.1
a=
(T
0
0m
Operation in this
area is limited by RDS(on).
5
on
ati
7
2
0
10
0.1
3
0.5
s
ID=0.2A
er
1.0
2
op
1.5
3
m
2.0
5
10
2.5
10
3.0
DC
Gate-to-Source Voltage, VGS -- V
10
7
5
3
2
7
VDD=30V
VGS=4V
2
Allowable Power Dissipation, PD -- W
100
7
5
3
2
Diode Forward Voltage, VSD -- V
SW Time -- ID
2
VGS=0V
0.1
0.3
5 7 100
IT11278
Drain Current, ID -- mA
3
IS -- VSD
1000
7
5
3
2
VDS=10V
Ta=
75
25° °C
C
--25
°C
1000
7
5
Source Current, IS -- mA
Forward Transfer Admittance, yfs -- mS
CPH6438
Ta=25°C
Single pulse
Mounted on a ceramic board (1200mm2✕0.8mm)
0.01
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain-to-Source Voltage, VDS -- V
5 7 100
IT12771
1.3
M
1.2
ou
nt
1.0
ed
on
ac
er
0.8
am
ic
bo
ar
0.6
d
(1
20
0m
m2
✕
0.4
0.
8m
m
)
0.2
0
0
20
40
60
80
100
120
Amibient Tamperature, Ta -- °C
140
160
IT12772
No. A0888-3/4
CPH6438
Note on usage : Since the CPH6438 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellctual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of September, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0888-4/4