ECH8652 Ordering number : ENA0935 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8652 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 1.8V drive. Composite type, facilitating high-density mounting. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Unit --12 V ±10 V --6 A ID Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% --40 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 1.3 W Total Power Dissipation PT Tch When mounted on ceramic substrate (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg 1.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS1 Conditions ID=--1mA, VGS=0V typ VDS=--12V, VGS=0V VGS=±8V, VDS=0V VGS(off) VDS=--6V, ID=--1mA VDS=--6V, ID=--3A Marking : WX Unit max --12 V VDS=--8V, VGS=0V IDSS2 IGSS ⏐yfs⏐ Ratings min --1 --10 ±10 --0.4 6.6 --1.4 11 μA μA μA V S Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O0108PE TI IM TC-00001630 No. A0935-1/4 ECH8652 Continued from preceding page. Ratings Parameter Symbol RDS(on)1 RDS(on)2 ID=--3A, VGS=--4.5V ID=--1.5A, VGS=--2.5V 21 28 mΩ Static Drain-to-Source On-State Resistance 31 45 mΩ ID=--0.5A, VGS=--1.8V VDS=--6V, f=1MHz 49 78 mΩ Input Capacitance RDS(on)3 Ciss Output Capacitance Coss Conditions min typ VDS=--6V, f=1MHz VDS=--6V, f=1MHz Unit max 1000 pF 320 pF Reverse Transfer Capacitance Crss 250 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 11 ns See specified Test Circuit. 72 ns td(off) tf See specified Test Circuit. 105 ns See specified Test Circuit. 87 ns 11 nC 1.5 nC Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--6A VDS=--6V, VGS=--4.5V, ID=--6A VDS=--6V, VGS=--4.5V, ID=--6A Diode Forward Voltage VSD IS=--6A, VGS=0V Package Dimensions 2.9 --0.81 8 7 6 5 1 2 3 4 0.25 Top View 2.9 0.15 5 2.3 0 to 0.02 2.8 V Electrical Connection unit : mm (typ) 7011A-001 8 nC --1.2 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 4 1 0.65 0.3 0.9 0.25 Top view 0.07 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 Bottom View Switching Time Test Circuit VDD= --6V VIN 0V --4.5V ID= --3A RL=2Ω VOUT VIN D PW=10μs D.C.≤1% G ECH8652 P.G 50Ω S No. A0935-2/4 ECH8652 ID -- VDS V --1. 8 --8 --6 --5 --4 --3 --2 --1 25° C --25°C --2 --7 5°C 1.5V V GS= -- Ta= 7 --3 VDS= --6V --9 Drain Current, ID -- A --4 ID -- VGS --10 --4.5 V --4.0 V Drain Current, ID -- A --5 --2.5V --8.0V --6.0V --6 --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 Drain-to-Source Voltage, VDS -- V 0 80 --3.0A 70 --1.5A 60 50 ID= --0.5A 30 20 10 0 0 --2 --4 --6 3 2 ⏐yfs⏐ -- ID 3 2 °C 25 3 2 0.1 7 5 --1.5A V, I D= .5 2 -V GS= .0A I = --3 --4.5V, D V GS= 40 30 20 10 --40 --20 0 20 40 60 80 100 120 140 160 IT12950 IS -- VSD VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 3 2 0.01 --0.001 2 3 0.001 5 7--0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 Drain Current, ID -- A 0 5 7 --10 5 2 td(off) 100 tf 7 5 3 tr 2 --0.6 --0.8 --1.0 --1.2 IT12952 Ciss, Coss, Crss -- VDS 3 f=1MHz 2 Ciss, Coss, Crss -- pF 3 --0.4 Diode Forward Voltage, VSD -- V VDD= --6V VGS= --4.5V 7 --0.2 IT12951 SW Time -- ID 1000 Switching Time, SW Time -- ns 50 --10 7 5 3 2 C 5° -2 = °C Ta 75 1.0 7 5 A --1.8 V GS= Ambient Temperature, Ta -- °C VDS= --6V 10 7 5 --2.5 IT12948 = --0.5 V, I D 60 IT12949 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 5 --2.0 70 0 --60 --8 Gate-to-Source Voltage, VGS -- V --1.5 RDS(on) -- Ta 80 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 90 --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 40 --0.5 IT12947 RDS(on) -- VGS 100 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --1.0 Ta= 75°C 25°C --25° C 0 Ciss 1000 7 5 Coss 3 Crss 2 td(on) 10 7 --0.01 100 2 3 5 7 --0.1 2 3 5 7 --1.0 Drain Current, ID -- A 2 3 5 7 --10 IT12953 0 --2 --4 --6 --8 --10 Drain-to-Source Voltage, VDS -- V --12 IT12954 No. A0935-3/4 ECH8652 VGS -- Qg --100 7 5 3 2 VDS= --6V ID= --6A --4.0 --3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --4.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC 11 12 IT12955 PD -- Ta 1.8 Allowable Power Dissipation, PD -- W 10 --10 7 5 3 2 ASO IDP= --40A 1m s ID= --6A 10 DC ms 10 0m op era s tio --1.0 7 5 3 2 --0.1 7 5 3 2 PW≤10μs n( Ta = 25 °C ) Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT12956 When mounted on ceramic substrate (900mm2✕0.8mm) 1.6 1.5 1.4 1.3 1.2 To t 1.0 al 0.8 Di ss 1u nit 0.6 ip ati on 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12957 Note on usage : Since the ECH8652 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2008. Specifications and information herein are subject to change without notice. PS No. A0935-4/4