Sanyo ENA1348 Npn epitaxial planar silicon transistor dc / dc converter application Datasheet

PCP1203
Ordering number : ENA1348
SANYO Semiconductors
DATA SHEET
PCP1203
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Applications
•
DC / DC converters, relay drivers, lamp drivers, motor drivers, Inverters, IGBT gate drivers.
Features
•
•
•
•
•
•
Adoption of FBET, MBIT processes.
High current capacitance.
Low collector-to-emitter saturation voltage.
High speed switching.
High allowable power dissipation.
Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
VCBO
VCEO
40
V
30
V
VEBO
IC
5
V
1.5
A
Base Current
ICP
IB
300
Collector Dissipation
PC
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Junction Temperature
Tj
Storage Temperature
Tstg
5
A
mA
When mounted on ceramic substrate (450mm2×0.8mm)
1.3
W
Tc=25°C
3.5
W
150
°C
-55 to +150
°C
Marking : QJ
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"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
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N1208EA MS IM TC-00001722 No. A1348-1/4
PCP1203
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
VCB=30V, IE=0A
VEB=4V, IC=0A
Gain-Bandwidth Product
hFE
fT
VCE=2V, IC=100mA
VCE=10V, IC=300mA
Output Capacitance
Cob
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
VCB=10V, f=1MHz
IC=0.75A, IB=15mA
Emitter Cutoff Current
DC Current Gain
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
Ratings
Conditions
min
typ
Unit
max
200
0.1
μA
0.1
μA
560
500
MHz
8
IC=0.75A, IB=15mA
pF
150
225
0.85
1.2
mV
V
V(BR)CBO
V(BR)CEO
IC=10μA, IE=0A
IC=1mA, RBE=∞
V(BR)EBO
ton
IE=10μA, IC=0A
See specified Test Circuit.
tstg
tf
See specified Test Circuit.
205
ns
See specified Test Circuit.
30
ns
Package Dimensions
40
V
30
V
5
V
35
ns
Switching Time Test Circuit
unit : mm (typ)
7007A-004
IB1
PW=50μs
D.C.≤1%
Top View
OUTPUT
IB2
INPUT
4.5
1.6
RB
1.5
RL
1
2
+
820μF
4.0
1.0
2.5
50Ω
VCC=12V
3
0.4
IC=20IB1= --20IB2=0.75A
0.4
0.5
1.5
3.0
0.75
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
IC -- VCE
Collector Current, IC -- A
50
1.8
VCE=2V
30mA
40mA
1.4
20mA
1.6
1.4
10mA
8mA
6mA
4mA
1.2
1.0
0.8
0.6
2mA
0.4
1.2
1.0
0.8
0.6
0.4
0.2
0.2
0
IC -- VBE
1.6
Collector Current, IC -- A
mA
2.0
Ta=7
5°C
25°C
--25°C
Bot t om View
IB=0mA
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Collector-to-Emitter Voltage, VCE -- V
0.9
1.0
IT14121
0
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
1.2
IT14122
No. A1348-2/4
PCP1203
hFE -- IC
7
VCE=2V
Gain-Bandwidth Product, f T -- MHz
DC Current Gain, hFE
Ta=75°C
25°C
--25°C
2
100
7
5
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
Collector Current, IC -- A
7
5
3
2
3
5
7
2
0.1
3
5
7
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Output Capacitance, Cob -- pF
100
VCE(sat) -- IC
2
1.0
IT01680
IC / IB=20
2
10
7
5
2
0.1
7
25
5
°C
°C
75
Ta=
3
2
5°C
--2
0.01
2
0.1
2
3
5
7 1.0
2
3
5 7 10
2
3
Collector-to-Base Voltage, VCB -- V
7
0.01
5
2
3
5
7 0.1
2
3
5
7 1.0
Collector Current, IC -- A
IT01682
VCE(sat) -- IC
7
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
2
0.1
C
25°
5
C
75°
Ta=
C
--25°
3
2
2
3
5
7 0.1
2
3
5
7 1.0
2
Collector Current, IC -- A
Ta=--25°C
7
75°C
5
25°C
3
2
3
5
μs
100
s
0μ
IC=1.5A
D
1m
s
C
1.0
7
5
n
io
at
er
op
)
°C
25
a=
(T
3
2
0.1
7
5
Ta=25°C
Single pulse
When mounted on ceramic substrate (450mm2×0.8mm)
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Collector-to-Emitter Voltage, VCE -- V
2 3
3
5
7 1.0
2
3
IT14126
PC -- Ta
1.4
50
0m m
s s
2
When mounted on ceramic substrate
(450mm2×0.8mm)
<10μs
10
10
7 0.1
Collector Current, IC -- A
1.6
ICP=5A
2 3
1.0
IT14125
ASO
0.01
0.01
2
2
0.01
3
Collector Dissipation, PC -- W
0.01
0.01
3
IC / IB=50
IC / IB=50
7
2
IT14124
VBE(sat) -- IC
3
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
3
3
Collector Current, IC -- A
3
5
3
3
2
5
2
0.01
3
5
3
2
7
f=1MHz
7
10
7
5
1000
IT14123
Cob -- VCB
100
VCE=10V
2
5
3
f T -- IC
3
1.3
1.2
1.0
0.8
0.6
0.4
0.2
5
IT14127
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT14113
No. A1348-3/4
PCP1203
PC -- Tc
4.0
Collector Dissipation, PC -- W
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT14114
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to change without notice.
PS No. A1348-4/4
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