ATP602 Ordering number : ENA1543A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ATP602 General-Purpose Switching Device Applications Features • • ON-resistance RDS(on)=2.1Ω (typ.) 10V drive • • Input capacitance Ciss=350pF (typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 600 V ±30 V Allowable Power Dissipation ID IDP PD 70 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 74 mJ 5 A Drain Current (Pulse) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C 5 A 15 A Note : *1 VDD=99V, L=5mH, IAV=5A (Fig.1) *2 L≤5mH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP602-TL-H 1.5 6.5 Marking ATP602 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 2.3 0.6 2.3 0.55 0.7 3 0.1 0.5 1 0.8 1.7 2,4 2 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 3 SANYO : ATPAK http://semicon.sanyo.com/en/network 62712 TKIM/12710QB TKIM TC-00002087 No. A1543-1/7 ATP602 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol V(BR)DSS IDSS ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=±30V, VDS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Turn-OFF Delay Time Fall Time Ratings Conditions min typ 600 VDS=10V, ID=1mA 3 VDS=10V, ID=2.5A ID=2.5A, VGS=10V 1.5 V 100 μA ±100 nA 5 2.9 V S 2.1 2.7 Ω 350 pF 68 pF 15 pF td(on) 14.2 ns tr td(off) 37.4 ns 36.2 ns Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=30V, f=1MHz See Fig.2 VDS=200V, VGS=10V, ID=5A 20.4 ns 13.6 nC 3.4 nC 7.2 IS=5A, VGS=0V Fig.1 Avalanche Resistance Test Circuit 10V 0V 1.2 V VDD=200V VIN ID=2.5A RL=80Ω ≥50Ω RG VOUT VIN ATP602 VDD 50Ω nC 0.9 Fig.2 Switching Time Test Circuit L 10V 0V Unit max PW=10μs D.C.≤0.5% P.G D G RGS=50Ω S ATP602 Ordering Information Device ATP602-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1543-2/7 ATP602 ID -- VDS 8 15V Tc= --25°C 8V 5 7V 3 2 6V 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 6 Tc=75°C 25°C 2 --25°C 1 6 7 8 9 10 11 12 13 | yfs | -- ID 7 14 1.0 7 5 3 5 7 2 1.0 3 Drain Current, ID -- A --25 0 25 50 75 100 125 VDD=200V VGS=10V 150 IT14903 IS -- VSD VGS=0V Single pulse 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 1.4 IT14905 Ciss, Coss, Crss -- VDS f=1MHz 1000 7 Ciss, Coss, Crss -- pF 2 100 tf 7 td (off) 5 3 tr 2 td(on) 5 Ciss 3 2 100 Coss 7 5 3 2 Crss 10 7 0.1 1 0.01 0.2 7 20 IT14901 = V GS 2 2 3 18 5A IT14904 SW Time -- ID 5 5 16 2. I D= , V 10 3 3 2 2 14 4 3 2 3 2 0.1 12 5 10 7 5 C 75° 10 Case Temperature, Tc -- °C Source Current, IS -- A Tc 8 Single pulse IT14902 °C -25 =- 2 6 RDS(on) -- Tc 0 --50 15 °C 25 3 4 Gate-to-Source Voltage, VGS -- V VDS=10V 5 2 6 4 5 0 IT14900 5 3 4 0 20 ID=2.5A Single pulse Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- S 18 75°C 6 --25°C 4 25°C Tc=7 5°C 2 8 2 VGS=5V 0 10 25 ° C 4 1 Switching Time, SW Time -- ns Drain Current, ID -- A 6 0 VDS=20V 12 10V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Drain Current, ID -- A 7 0 ID -- VGS 14 Tc=25°C 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 IT14906 10 7 0 10 20 30 40 50 Drain-to-Source Voltage, VDS -- V 60 IT14907 No. A1543-3/7 ATP602 VGS -- Qg 10 10 7 5 7 6 5 4 3 3 2 4 6 8 10 12 PD -- Tc 16 50 40 30 20 10 0 20 40 60 80 100 3 120 Case Temperature, Tc -- °C 140 160 IT14910 s 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 60 0 2 IT14908 70 μs Tc=25°C Single pulse 0.01 1.0 Avalanche Energy derating factor -- % 80 14 Operation in this area is limited by RDS(on). 3 2 1 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 1.0 7 5 0.1 7 5 2 0μ 3 2 2 0 10 10 ID=5A s 1m Drain Current, ID -- A 8 0 IDP=15A (PW≤10μs) n s m tio 10 ms era 0 p 10 C o D Gate-to-Source Voltage, VGS -- V 9 ASO 3 2 VDS=200V ID=5A 5 7 1000 IT16934 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1543-4/7 ATP602 Taping Specification ATP602-TL-H No. A1543-5/7 ATP602 Outline Drawing ATP602-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1543-6/7 ATP602 Note on usage : Since the ATP602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A1543-7/7