CPH5838 Ordering number : ENN8235 CPH5838 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • DC / DC converters. Composite type with a P-Channel Sillicon MOSFET (MCH3307) and a Schottky Barrier Diode (SBS004) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage VDSS VGSS Gate-to-Source Voltage Drain Current (DC) --20 ID Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2✕0.8mm) 1unit V ±10 V --1 A --4 A 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C VRRM VRSM 15 V 15 V Average Output Current IO 1 A Surge Forward Current IFSM [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 10 A Junction Temperature Tj 50Hz sine wave, 1 cycle --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : XQ Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22805PE TS IM TB-00001210 No.8235-1/6 CPH5838 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 VDS=--20V, VGS=0 --20 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VDS=0 VDS=--10V, ID=--1mA --0.4 yfs RDS(on)1 VDS=--10V, ID=--500mA 0.72 Cutoff Voltage Forward Transfer Admittance V --1 µA ±10 µA --1.4 V 1.2 S 380 500 mΩ RDS(on)2 Ciss ID=--500mA, VGS=--4V ID=--300mA, VGS=--2.5V 540 760 mΩ VDS=--10V, f=1MHz 115 pF Coss VDS=--10V, f=1MHz 23 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 15 pF Turn-ON Delay Time td(on) See specified Test Circuit. 8 ns Rise Time tr td(off) See specified Test Circuit. 6 ns See specified Test Circuit. 15 ns Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge 7 ns VDS=--10V, VGS=--4V, ID=--1A See specified Test Circuit. 1.5 nC 0.4 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--1A VDS=--10V, VGS=--4V, ID=--1A Diode Forward Voltage VSD IS=--1A, VGS=0 VR VF 1 IR=1mA IF=0.5A VF 2 IF=1A VR=6V 0.3 nC --0.89 --1.2 V 0.30 0.35 0.35 0.40 V 500 µA [SBD] Reverse Voltage Forward Voltage Reverse Current IR C Interterminal Capacitance Reverse Recovery Time trr Rth(j-a) Thermal Resistance Package Dimensions unit : mm 2171A 15 VR=10V, f=1MHz, cycle 42 IF=IR=100mA, See specified Test Circuit. Mounted on a ceramic board (900mm2✕0.8mm) 4 110 4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.2 2.8 1.6 0.05 1 2 0.95 0.7 0.9 0.2 2.9 ns °C / W 3 3 0.6 1 pF 15 0.15 0.6 5 V Electrical Connection 5 0.4 V 2 Top view 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 No.8235-2/6 CPH5838 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD= --10V Duty≤10% 100mA ID= --500mA RL=20Ω VOUT D 50Ω 100Ω 10Ω 100mA VIN 10µs PW=10µs D.C.≤1% 10mA VIN 0V --4V --5V G trr CPH5838 50Ω S --1.8 --0.6 --0.5 --0.4 --0.3 VGS= --1.5V --1.2 --1.0 --0.8 --0.6 --0.4 --0.1 --0.2 25 ° C --0.2 0 C Ta= --1.4 75 °C °C --2 --2 5 --0.7 Ta = Drain Current, ID -- A --1.6 .0V 75 °C [MOSFET] VDS= --10V 25° .5V V --2.0 --0.8 Drain Current, ID -- A ID -- VGS [MOSFET] --2 --3 . --4. 0 --0.9 0V ID -- VDS --1.0 --2 5°C P.G 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 0 --1.0 Drain-to-Source Voltage, VDS -- V IT03501 RDS(on) -- VGS [MOSFET] 1000 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 IT03502 Gate-to-Source Voltage, VGS -- V [MOSFET] RDS(on) -- Ta 1000 900 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 800 700 --0.5A ID= --0.3A 600 500 400 300 200 100 0 0 --2 --4 --6 --8 Gate-to-Source Voltage, VGS -- V --10 IT03503 900 800 .5V 700 --2 S= A, VG --0.3 = ID 600 V = --4.0 , V GS 500 0.5A I D= -- 400 300 200 100 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT03504 No.8235-3/6 CPH5838 ° --25 C 7 Ta= C 75° 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 0.1 --0.01 2 3 5 7 2 --0.1 3 5 SW Time -- ID 3 --0.01 --0.4 7 --1.0 IT03505 Drain Current, ID -- A [MOSFET] --0.6 --0.7 --0.5 --1.0 --1.1 --1.2 f=1MHz 100 5 3 2 td(off) 10 td(on) 7 tf 5 Ciss Ciss, Coss, Crss -- pF 7 tr 100 7 5 3 Coss 2 3 Crss 1.0 --0.1 10 2 3 5 7 2 --1.0 Drain Current, ID -- A 3 0 --10 7 5 --4 --6 --8 --10 --12 --14 --16 --18 IDP= --4A <100µs 1m s 3 Drain Current, ID -- A --3.0 --2.5 --2.0 --1.5 --1.0 2 --1.0 7 5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Total Gate Charge, Qg -- nC IT03509 PD -- Ta 1.0 0.9 1.6 m D C 10 op 2 --0.1 7 5 --0.01 --0.01 s 0m s er 3 2 0 10 ID= --1A 3 --0.5 --20 Drain-to-Source Voltage, VDS -- V IT03508 ASO [MOSFET] [MOSFET] VDS= --10V ID= --1A --3.5 --2 IT03507 VGS -- Qg --4.0 Gate-to-Source Voltage, VGS -- V --0.9 2 2 Allowable Power Dissipation, PD -- W --0.8 Diode Forward Voltage, VSD -- V IT03506 Ciss, Coss, Crss -- VDS [MOSFET] 3 VDD= --10V VGS= --4V 2 Switching Time, SW Time -- ns 3 2 --25° C 1.0 [MOSFET] VGS=0 25°C 2 C 25° IF -- VSD --10 7 5 Forward Current, IF -- A Forward Transfer Admittance, yfs -- S [MOSFET] VDS= --10V Ta= 75° C yfs -- ID 3 at io n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) 1unit 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT09172 [MOSFET] M ou nt 0.8 ed on ac er 0.6 am ic bo ar d (6 00 0.4 m m2 ✕ 0. 8m m 0.2 )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09178 No.8235-4/6 CPH5838 IF -- VF 3 [SBD] 2 Reverse Current, IR -- mA °C 25 =1 Ta 7 5 °C 25 3 10 0° C 50 °C 2 0.1 7 75 °C Forward Current, IF -- A 1.0 5 3 2 0.01 0.1 0.2 0.3 0.4 Ta=125°C 100°C 10 7 5 3 2 75°C 1.0 7 5 3 2 50°C 25°C 0.1 7 5 3 2 0.5 Forward Voltage, VF -- V PF(AV) -- IO 0.8 0.6 0.4 Rectangular wave 0.3 θ 0.2 Sine wave 360° 0.1 180° 360° 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Average Forward Current, IO -- A IT00624 IFSM -- t [SBD] 12 10 15 IT00623 C -- VR 1000 [SBD] f=1MHz 7 5 (3) (2) (4) (1) 0.5 5 Reverse Voltage, VR -- V [SBD] (1) Rectangular wave θ=60° (2) Rectangular wave θ=120° (3) Rectangular wave θ=180° (4) Sine wave θ=180° 0.7 0 IT00622 Interterminal Capacitance, C -- pF Average Forward Power Dissipation, PF(AV) -- W [SBD] 0.01 0 Surge Forward Current, IFSM(Peak) -- A IR -- VR 100 7 5 3 2 3 2 100 7 5 3 2 10 7 5 3 2 1.0 1.0 2 3 5 7 Reverse Voltage, VR -- V 10 2 IT00625 Current waveform 50Hz sine wave Is 10 20ms t 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 IT00626 No.8235-5/6 CPH5838 Note on usage : Since the CPH5838 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. PS No.8235-6/6