Fairchild ES08S 2.0 ampere superfast rectifier Datasheet

ES2A - ES2D
Features
•
For surface mount applications.
•
Glass passivated junction.
•
Low profile package.
•
Easy pick and place.
•
Built-in strain relief.
•
0.185 (4.699)
0.160 (4.064)
0.083 (2.108)
0.075 (1.905 )
2
SMB/DO-214AA
0.096 (2.438)
0.083 (2.108)
COLOR BAND DENOTES CATHODE
Superfast recovery times for
high efficiency.
Absolute Maximum Ratings*
Symbol
0.155 (3.937)
0.130 (3.302)
0.220 (5.588)
0.200 (5.080)
0.050 (1.270)
0.030 (0.762)
2.0 Ampere Superfast Rectifiers
IO
1
0.008 (0.203)
0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
TA = 25°C unless otherwise noted
Parameter
Value
Units
2.0
A
50
A
1.66
13.3
75
W
mW/°C
°C/W
RθJA
Average Rectified Current
.375 " lead length @ TA = 110°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient**
RθJL
Thermal Resistance, Junction to Lead**
20
°C/W
Tstg
Storage Temperature Range
-50 to +150
°C
TJ
Operating Junction Temperature
-50 to +150
°C
if(surge)
PD
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics
TA = 25°C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage
Device
Units
2A
2B
2C
2D
50
100
150
200
V
Maximum RMS Voltage
35
70
105
140
V
DC Reverse Voltage
(Rated VR)
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 100°C
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
Maximum Forward Voltage @ 2.0 A
50
100
150
200
V
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
1999 Fairchild Semiconductor Corporation
10
350
20
µA
µA
nS
0.90
V
18
pF
ES2A-ES2D, Rev. A
ES2A - ES2D
Discrete POWER & Signal
Technologies
ES2A - ES2D
Typical Characteristics
Forward Characteristics
Forward Current Derating Curve
50
FORWARD CURRENT (A)
FORWARD CURRENT (A)
2.5
2
1.5
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" (9.0mm) LEAD
LENGTHS
1
0.5
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE ( º C)
10
1
0.1
TA = 25 º C
Pulse Width = 300µs
2% Duty Cycle
0.01
0.4
175
1.6
1.8
1000
REVERSE CURRENT ( µ A)
PEAK FORWARD SURGE CURRENT (A)
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
Reverse Characteristics
Non-Repetitive Surge Current
60
50
40
30
20
10
0
0.6
1
2
5
10
20
50
NUMBER OF CYCLES AT 60Hz
100
T A = 100 ºC
100
10
T A = 75º C
1
T A = 25º C
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Junction Capacitance
60
CAPACITANCE (pF)
50
40
30
20
10
0
0.1
50Ω
NONINDUCTIVE
0.5 1
5 10 20 50 100
REVERSE VOLTAGE (V)
50Ω
NONINDUCTIVE
+0.5A
500
trr
(-)
DUT
50V
(approx)
50Ω
NONINDUCTIVE
Pulse
Generator
(Note 2)
0
-0.25A
(+)
OSCILLOSCOPE
(Note 1)
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
ES2A-ES2D, Rev. A
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
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Definition of Terms
Datasheet Identification
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Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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