Dynex ESM4120 Recovery diode Datasheet

ESM4120
ESM4120
Fast Recovery Diode
Advance Information
Replaces March 1998 version, DS4141-3.4
DS4141-4.0 January 2000
KEY PARAMETERS
VRRM
1000V
IF(AV)
334A
IFSM
4000A
Qr
15µC
trr
0.8µs
APPLICATIONS
■ Induction Heating
■ A.C. Motor Drives
■ Inverters And Choppers
■ Welding
■ High Frequency Rectification
■ UPS
FEATURES
■ Double Side Cooling
■ High Surge Capability
■ Low Recovery Charge
VOLTAGE RATINGS
Type Number
Repetitive Peak
Reverse Voltage
VRRM
V
ESM4120 10
ESM4120 08
ESM4120 06
1000
800
600
Conditions
VRSM = VRRM + 100V
Outline type code: M771.
See Package Details for further information.
CURRENT RATINGS
Symbol
Parameter
Conditions
Max.
Units
Double Side Cooled
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
334
A
IF(RMS)
RMS value
Tcase = 65oC
565
A
Continuous (direct) forward current
Tcase = 65oC
490
A
IF
Single Side Cooled (Anode side)
IF(AV)
Mean forward current
Half wave resistive load, Tcase = 65oC
210
A
IF(RMS)
RMS value
Tcase = 65oC
360
A
Continuous (direct) forward current
Tcase = 65oC
290
A
IF
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ESM4120
SURGE RATINGS
Symbol
IFSM
I2t
IFSM
I2t
Parameter
Conditions
Max.
Units
4.5
kA
101 x 103
A2s
3.6
kA
64.8 x 103
A2s
Surge (non-repetitive) forward current
10ms half sine; with 0% VRRM, Tj = 125oC
I2t for fusing
Surge (non-repetitive) forward current
10ms half sine; with 50% VRRM, Tj = 125oC
I2t for fusing
THERMAL AND MECHANICAL DATA
Parameter
Symbol
Conditions
Double side cooled
Rth(j-c)
Thermal resistance - junction to case
Min.
Max.
Units
dc
-
0.07
o
Anode dc
-
0.133
o
Cathode dc
-
0.147
o
Double side
-
0.02
o
Single side
-
0.04
o
-
125
o
o
C/W
C/W
Single side cooled
Rth(c-h)
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
125
Clamping force
3.0
4.0
-
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Thermal resistance - case to heatsink
Clamping force 3.5kN
with mounting compound
On-state (conducting)
C/W
C/W
C/W
C
C
kN
ESM4120
CHARACTERISTICS
Symbol
Parameter
Conditions
Typ.
Max.
Units
VFM
Forward voltage
At 450A peak, Tcase = 25oC
-
1.7
V
IRRM
Peak reverse current
At VRRM, Tcase = 125oC
-
100
mA
0.8
-
µs
trr
Reverse recovery time
Recovered charge (50% chord)
IF = 200A, diRR/dt = 50A/µs
-
15
µC
IRM
Reverse recovery current
Tcase = 125oC, VR = 100V
-
34
A
K
Soft factor
-
-
-
QRA1
VTO
Threshold voltage
At Tvj = 125oC
-
1.25
V
rT
Slope resistance
At Tvj = 125oC
-
1.0
mΩ
Forward recovery voltage
di/dt = 1000A/µs, Tj = 125oC
-
25
V
VFRM
DEFINITION OF K FACTOR AND QRA1
QRA1 = 0.5x IRR(t1 + t2)
dIR/dt
t1
t2
k = t1/t2
τ
0.5x IRR
IRR
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ESM4120
CURVES
1000
Measured under pulse conditions
Instantaneous forward current IF - (A)
900
800
Tj = 125˚C
700
Tj = 25˚C
600
500
1.25
1.5
1.75
2.0
2.25
Instantaneous forward voltage VF - (V)
Fig.1 Maximum (limit) forward characteristics
500
Measured under pulse conditions
Instantaneous forward current IF - (A)
400
300
Tj = 125˚C
200
Tj = 25˚C
100
0
1.0
1.2
1.4
1.6
Instantaneous forward voltage VF - (V)
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Fig.2 Maximum (limit) forward characteristics
1.8
ESM4120
1000
QS = ∫
IF
50µs
Conditions:
0
Tj = 125 ˚C,
VR = 100V
Reverse recovered charge QS - (µC)
QS
tp = 1ms
dIR/dt
100
IRR
IF = 1000A
IF = 500A
IF = 200A
IF = 100A
10
1
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.3 Recovered charge
1000
Conditions:
Tj = 125˚C,
Reverse recovery current IRR - (A)
VR = 100V
100
IF = 1000A
10
1
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
1000
Fig.4 Typical reverse recovery current vs rate of rise of forward current
5/8
ESM4120
0.1
Thermal impedance - (˚C/W)
d.c. Double side cooled
0.01
0.001
0.01
0.1
1
Time - (s)
10
100
Fig.5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W)
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
2 holes Ø3.6 x 2.0 deep
(One in each electrode)
Cathode
Ø42 max
15.0
14.0
Ø19 nom
Ø19 nom
Anode
Nominal weight: 50g
Clamping force: 5kN ±10%
Package outine type code: M771
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ESM4120
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Calculating the junction temperature or power semiconductors
AN4506
Recommendations for clamping power semiconductors
Thyristor and diode measurement with a multi-meter
AN4839
AN4853
Use of V , r on-state characteristic
AN5001
TO
T
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and
current capability of our semiconductors.
We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The
Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of
our customers.
Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete
solution (PACs).
DEVICE CLAMPS
Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of preloaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm
Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies.
Please refer to our application note on device clamping, AN4839
HEATSINKS
Power Assembly has it’s own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the
performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on
request.
For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or the
factory.
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ESM4120
http://www.dynexsemi.com
e-mail: [email protected]
HEADQUARTERS OPERATIONS
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln.
Lincolnshire. LN6 3LF. United Kingdom.
Tel: 00-44-(0)1522-500500
Fax: 00-44-(0)1522-500550
DYNEX POWER INC.
Unit 7 - 58 Antares Drive,
Nepean, Ontario, Canada K2E 7W6.
Tel: 613.723.7035
Fax: 613.723.1518
Toll Free: 1.888.33.DYNEX (39639)
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SALES OFFICES
France, Benelux, Italy and Spain Tel: +33 (0)1 69 18 90 00. Fax: +33 (0)1 64 46 54 50
Germany Tel: 07351 827723
North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) /
Tel: (831) 440-1988. Fax: (831) 440-1989 / Tel: (949) 733-3005. Fax: (949) 733-2986.
UK, Germany, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020
These offices are supported by Representatives and Distributors in many countries world-wide.
© Dynex Semiconductor 2000 Publication No. DS4141-4 Issue No. 4.0 January 2000
TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations:
Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started.
Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change.
Advance Information: The product design is complete and final characterisation for volume production is well in hand.
No Annotation: The product parameters are fixed and the product is available to datasheet specification.
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