Eudyna GaN-HEMT 90W Preliminary ES/EGN26A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Power : 50.0dBm (typ.) @ P3dB ・High Efficiency: 55%(typ.) @ P3dB ・Linear Gain : 14.0dB(typ.) @ f=2.6GHz ・Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt Tstg Tch Condition a in Rating Tc=25oC m i l e ry 120 -5 150 -65 to +175 250 Unit V V W oC oC RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item r P DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol VDS IGF IGR Tch Condition Limit Unit 50 <TBD >-7.2 200 V mA mA oC RG=5 Ω RG=5 Ω ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition Pinch-Off Voltage Vp VDS=50V IDS=36mA Gate-Drain Breakdown Voltage VGDO IGS=- 18mA 3dB Gain Compression Power P3dB VDS=50V Drain Efficiency ηd IDS(DC)=500mA Linear Gain GL f=2.6GHz Thermal Resistance Edition 1.2 Dec. 2005 Channel to Case Rth 1 min. Limit Typ. Max. -1.0 -2.0 -3.5 Unit V - -350 - TBD 50.0 - dBm - 55 - % 14.0 - TBD - 1.3 1.5 V dB oC/W ES/EGN26A090IV High Voltage - High Power GaN-HEMT 53 100 51 51 90 49 49 80 47 70 45 60 43 50 Output Power [dBm] 47 45 43 41 39 37 35 33 2.45 41 a in 39 37 ry 40 30 20 35 2.50 2.55 2.60 2.65 2.70 2.75 m i l e Frequency [GHz] Pin=22dBm Pin=26dBm Pin=34dBm Pin=38dBm 10 33 21 23 0 25 27 29 Pin=30dBm r P Power Derating Curve 140 120 100 80 60 40 20 0 0 50 100 150 200 Case Temperature [o C] Edition 1.2 Dec. 2005 2 31 33 35 Input Power [dBm] 160 Total Power Dissipasion [W] Output Power [dBm] 53 250 300 37 39 Drain Efficiency [%] Output Power and Drain Efficiency vs. Input Power VDS=50V IDS(DC)=500mA f=2.6GHz Output Power vs. Frequency VDS=50V IDS(DC)=500mA ES/EGN26A090IV High Voltage - High Power GaN-HEMT S-Parameters @VDS=50V, IDS=500mA, f=1 to 4 GHz, Zl = Zs = 50 ohm +50j +100j 10Ω +25j 25Ω 50Ω +10j 0 2.6GHz 2.6GHz -10j -25j -100j -50j r P +90° 2.6GHz ±180° 10 Scale for |S21| Freq [GHz] 1.0 1.1 1.2 1.3 1.4 +250j 1.5 1.6 1.7 ∞ 1.8 1.9 2.0 -250j 2.1 2.2 2.3 S11 2.4 2.5 S22 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 0° 3.9 4.0 m i l e 2.6GHz S12 0.1 S21 Scale for |S 12| -90° Edition 1.2 Dec. 2005 3 S11 MAG ANG 0.943 165.0 0.943 162.9 0.940 160.3 0.935 157.5 0.928 154.6 0.925 150.6 0.913 146.1 0.894 141.3 0.869 135.0 0.833 127.3 0.776 116.9 0.692 103.3 0.568 83.3 0.402 49.8 0.255 -19.0 0.296 -100.5 0.371 -138.8 0.406 -159.7 0.401 -175.1 0.357 170.2 0.272 154.9 0.139 134.9 0.046 -28.8 0.242 -67.5 0.425 -87.3 0.568 -103.1 0.665 -116.5 0.732 -127.4 0.769 -137.1 0.795 -145.2 0.814 -152.3 S21 MAG ANG 0.650 -13.1 0.616 -18.2 0.605 -23.0 0.619 -28.1 0.662 -33.3 0.724 -39.5 0.828 -46.4 0.981 -54.7 1.221 -64.3 1.577 -75.6 2.116 -90.6 2.998 -109.6 4.387 -134.6 6.406 -169.4 8.084 144.3 7.474 95.7 5.713 58.1 4.410 31.2 3.574 9.4 3.057 -9.9 2.752 -28.8 2.545 -48.8 2.377 -69.9 2.165 -91.9 1.911 -113.2 1.663 -132.7 1.463 -149.5 1.331 -164.6 1.254 -179.5 1.254 165.6 1.324 147.4 y r a in S12 MAG ANG 0.001 1.1 0.001 6.6 0.001 -17.8 0.001 12.1 0.001 27.6 0.001 -5.3 0.001 4.0 0.001 -2.7 0.002 -14.6 0.002 -24.3 0.003 -48.8 0.004 -69.2 0.006 -101.3 0.010 -137.9 0.014 176.6 0.014 127.7 0.013 96.2 0.011 72.4 0.010 56.3 0.009 40.2 0.009 24.7 0.009 4.9 0.009 -13.8 0.008 -37.1 0.008 -58.2 0.007 -74.9 0.007 -90.9 0.007 -106.6 0.008 -117.0 0.009 -122.4 0.013 -136.3 S22 MAG ANG 0.905 176.8 0.899 176.2 0.897 175.3 0.906 174.2 0.910 172.9 0.912 171.2 0.911 169.2 0.910 166.8 0.902 164.1 0.895 160.8 0.875 156.4 0.839 150.9 0.762 142.5 0.588 129.2 0.228 127.2 0.333 -146.4 0.606 -155.0 0.739 -165.1 0.805 -172.8 0.843 -178.7 0.864 176.2 0.878 171.3 0.884 166.5 0.887 160.9 0.886 155.4 0.877 149.3 0.864 142.6 0.841 135.2 0.814 125.4 0.771 112.8 0.710 93.1 ES/EGN26A090IV High Voltage - High Power GaN-HEMT IV Package Outline Metal-Ceramic Hermetic Package r P m i l e y r a in PIN ASSIGNMENT 1 : GATE 2 : SOURCE(Flange) 3 : DRAIN Unit : mm Edition 1.2 Dec. 2005 4