Polyfet F1007 Patented gold metalized silicon gate enhancement mode rf power vdmos transistor Datasheet

polyfet rf devices
F1007
General Description
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
20 Watts Gemini
Package Style AK
TM
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
100 Watts
1.75 o C/W
Maximum
Junction
Temperature
200 o C
Storage
Temperature
DC Drain
Current
-65 o C to 150o C
4 A
RF CHARACTERISTICS (
SYMBOL
PARAMETER
Gps
Common Source Power Gai
η
Drain Efficiency
VSWR
MIN
TYP
Drain to
Source
Voltage
Gate to
Source
Voltage
70 V
30V
70 V
20WATTS OUTPUT )
MAX
13
60
Load Mismatch Toleranc
Drain to
Gate
Voltage
20:1
UNITS
TEST CONDITIONS
dB
Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
%
Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
Relative
Idq = 0.4 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
Bvdss
Drain Breakdown Voltag
Idss
Zero Bias Drain Curren
Igss
Gate Leakage Curren
Vgs
Gate Bias for Drain Curren
gM
Forward Transconductanc
Rdson
Saturation Resistanc
Idsat
MIN
TYP
MAX
65
1
UNITS
TEST CONDITIONS
V
Ids = 0.05 A,
Vgs = 0V
1
mA
Vds = 28.0 V,
Vgs = 0V
1
uA
Vds = 0 V,
Vgs = 30V
7
V
Ids = 0.1 A,
Vgs = Vds
0.8
Mho
Vds = 10V, Vgs = 5V
1
Ohm
Vgs = 20V, Ids = 4 A
Saturation Curren
5.5
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
33
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
4
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
20
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
F1007
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
F1007 POUT vs PIN Idq=0.4A F=400 Mhz Vds=28v
F1B 1 DIE Capacitance vs Vds
45
14.5
40
14
35
13.5
30
13
25
12.5
20
12
100
Coss
15
Ciss
10
11.5
Crss
Efficiency = 50%
10
11
5
10.5
0
10
0
0.5
1
1.5
2
2.5
3
3.5
4
1
Pin in Watts
0
POUT
5
10
PIN
15
20
25
30
VDS IN VOLTS
IV CURVE
ID AND GM VS VGS
F1B 1DIE IV CURVE
F1B 1 DIE GM & ID vs VG
6
10
Id
5
4
1
3
2
Gm
0.1
1
0
0
2
4
6
8
10
12
14
16
18
20
0.01
Vds in Volts
0
Vg = 2V
Vg = 4V
Vg = 6V
Vg = 8V
S11 AND S22 SMITH CHART
Vg = 10V
2
Vg = 12V
4
6
8
10
12
14
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
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