Polyfet F1020 Patented gold metalized silicon gate enhancement mode rf power vdmos transistor Datasheet

polyfet rf devices
F1020
General Description
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
TM
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
130 Watts Gemini
Package Style AR
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
Junction to
Case Thermal
Resistance
390 Watts
Maximum
Junction
Temperature
0.45 o C/W
200 o C
Storage
Temperature
DC Drain
Current
-65 o C to 150o C
20 A
Drain to
Gate
Voltage
Drain to
Source
Voltage
Gate to
Source
Voltage
70 V
30V
70 V
RF CHARACTERISTICS ( 130 WATTS OUTPUT )
SYMBOL
PARAMETER
Gps
Common Source Power Gai
η
Drain Efficienc
VSWR
MIN
TYP
MAX
10
60
Load Mismatch Toleranc
20:1
UNITS
TEST CONDITIONS
dB
Idq =
2 A, Vds = 28.0 V, F = 400 MHz
%
Idq =
2 A, Vds = 28.0 V, F = 400 MHz
Relative
Idq =
2 A, Vds = 28.0 V, F = 400 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
Bvdss
Drain Breakdown Voltag
Idss
Zero Bias Drain Curren
Igss
Gate Leakage Curren
Vgs
Gate Bias for Drain Curren
gM
Forward Transconductanc
Rdson
MIN
TYP
MAX
65
1
UNITS
TEST CONDITIONS
V
Ids = 0.25 A,
Vgs = 0V
5
mA
Vds = 28.0 V,
Vgs = 0V
1
uA
Vds = 0 V,
Vgs = 30V
7
V
Ids = 0.5 A,
Vgs = Vds
4
Mho
Vds = 10V, Vgs = 5V
Saturation Resistanc
0.25
Ohm
Vgs = 20V, Ids = 20 A
Idsat
Saturation Curren
27.5
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
165
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
20
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
100
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
F1020
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
F1020 POUT vs PIN F=400 MHZ; IDQ=2.0A; VDS=28V
F1B 5 DIE Capacitance vs Vds
12
250
1000
11
200
GAIN
10
Ciss
150
9
Coss
100
100
POUT
8
50
7
Crss
Efficiency = 55%
6
0
0
5
10
15
20
25
30
35
40
10
PIN IN WATTS
0
POUT
5
10
15
GAIN
20
25
30
VDS IN VOLTS
IV CURVE
ID AND GM VS VGS
F1B 5 DIE IV CURVE
F1B_5 DICE ID & GM VS VG
35
100
30
Id
25
10
20
15
1
Gm
10
5
0
0.1
0
2
4
6
8
10
12
14
16
18
20
0
2
4
Vds in Volts
Vg = 2V
Vg = 4V
Vg = 6V
6
8
10
12
14
16
18
20
Vgs in Volts
Vg = 8V
S11 AND S22 SMITH CHART
Vg = 10V
Vg = 12V
GM
ID
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 1/12/98
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
Similar pages