polyfet rf devices F1066 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 100 Watts Push - Pull Package Style AD TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation Junction to Case Thermal Resistance 290 Watts 0.6 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current -65 o C to 150o C RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gai η Drain Efficiency VSWR MIN TYP 16 A Drain to Source Voltage Gate to Source Voltage 70 V 30V 70 V 100WATTS OUTPUT ) MAX 10 60 Load Mismatch Toleranc Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz % Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz Relative Idq = 1.6 A, Vds = 28.0 V, F = 400 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN TYP MAX Bvdss Drain Breakdown Voltag 65 Idss Zero Bias Drain Curren 4 Igss Gate Leakage Curren Vgs Gate Bias for Drain Curren gM Forward Transconductanc Rdson Saturation Resistanc Idsat Saturation Curren Ciss Common Source Input Capacitanc Crss Coss UNITS V 1 TEST CONDITIONS Ids = 0.2 A, Vgs = 0V mA Vds = 28.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.4 A, Vgs = Vds 3.2 Mho Vds = 10V, Vgs = 5V 0.35 Ohm Vgs = 20V, Ids = 16 A 22 Amp Vgs = 20V, Vds = 10V 132 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Common Source Feedback Capacitanc 16 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Common Source Output Capacitanc 80 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F1066 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1066 POUT VS PIN F=400 MHZ; IDQ=1.6A; VDS=28.0V F1B 4DIE CAPACITANCE 120 15.00 100 14.00 80 13.00 60 12.00 1000 Coss 40 11.00 Efficiency = 55% 20 Crss 10.00 0 9.00 0 1 2 3 4 Ciss 100 5 6 7 8 PIN IN WATTS 9 10 10 POUT 0 5 10 15 20 25 30 VDS IN VOLTS GAIN IV CURVE ID AND GM VS VGS F1B 4DIE IV CURVE F1B 4 DIE GM & ID vs VGS 30 100 25 Id 20 10 15 10 1 5 Gm 0 0 2 4 6 8 10 12 14 16 18 20 0.1 Vds in Volts 0 Vg = 2V Vg = 4V Vg = 6V Vg = 8V S11 AND S22 SMITH CHART Vg = 10V 2 Vg = 12V 4 6 8 10 12 14 Vgs in Volts PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com