polyfet rf devices F1209 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 20 Watts Push - Pull Package Style AD TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 80 Watts Junction to Case Thermal Resistance Maximum Junction Temperature 2.1 o C/W 200 o C Storage Temperature DC Drain Current -65 o C to 150o C 4 A RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gai η Drain Efficiency VSWR MIN TYP Drain to Source Voltage Gate to Source Voltage 50 V 30V 50 V 20WATTS OUTPUT ) MAX 10 60 Load Mismatch Toleranc Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.8 A, Vds = 12.5 V, F = 200 MHz % Idq = 0.8 A, Vds = 12.5 V, F = 200 MHz Relative Idq = 0.8 A, Vds = 12.5 V, F = 200 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN TYP MAX 40 UNITS TEST CONDITIONS Bvdss Drain Breakdown Voltag Idss Zero Bias Drain Curren Igss Gate Leakage Curren Vgs Gate Bias for Drain Curren gM Forward Transconductanc 0.8 Mho Vds = 10V, Vgs = 5V Rdson Saturation Resistanc 0.7 Ohm Vgs = 20V, Ids = 8 A Idsat Saturation Curren 7.5 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitanc 40 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitanc 6 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitanc 30 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz 1 V Ids = 0.05 A, Vgs = 0V 1 mA Vds = 12.5 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.1 A, Vgs = Vds POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F1209 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1C 1DIE CAPACITANCE 100 Ciss Coss 10 Crss 1 0 5 10 15 20 25 30 VDS IN VOLTS IV CURVE ID AND GM VS VGS F1C 1DIE IV CURVE F1C 1DIE GM & ID vs VGS 8 10 Id 7 6 5 4 1 3 Gm 2 1 0 0 2 4 6 8 10 12 14 16 18 20 0.1 Vds in Volts 0 Vg = 2V Vg = 4V Vg = 6V Vg = 8V S11 AND S22 SMITH CHART Vg = 10V 2 Vg = 12V 4 6 8 10 12 14 Vgs in Volts PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com