polyfet rf devices F1260 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 60 Watts Single Ended Package Style AT TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation Junction to Case Thermal Resistance 150 Watts 1.2 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current -65 o C to 150o C 8 A RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gai η Drain Efficiency VSWR MIN TYP Drain to Source Voltage Gate to Source Voltage 50 V 30V 50 V 60WATTS OUTPUT ) MAX 10 60 Load Mismatch Toleranc Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 1.6 A, Vds = 12.5 V, F = 175 MHz % Idq = 1.6 A, Vds = 12.5 V, F = 175 MHz Relative Idq = 1.6 A, Vds = 12.5 V, F = 175 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN TYP MAX Bvdss Drain Breakdown Voltag 40 Idss Zero Bias Drain Curren 4 Igss Gate Leakage Curren Vgs Gate Bias for Drain Curren gM Forward Transconductanc Rdson Saturation Resistanc Idsat Saturation Curren Ciss Common Source Input Capacitanc Crss Common Source Feedback Capacitanc Coss Common Source Output Capacitanc UNITS V 1 TEST CONDITIONS Ids = 0.2 A, Vgs = 0V mA Vds = 12.5 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.4 A, Vgs = Vds 3.2 Mho Vds = 10V, Vgs = 5V 0.25 Ohm Vgs = 20V, Ids = 32 A 30 Amp Vgs = 20V, Vds = 10V 160 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz 24 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz 120 pF Vds = 12.5 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F1260 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1260 POUT VS PIN F=175 MHZ; IDQ=1.6A; VDS=12.5V F1C 4 DIE CAPACITANCE 70 16.00 60 15.00 50 14.00 40 13.00 1000 Coss Ciss 100 30 12.00 Efficiency = 65% 20 11.00 10 10.00 0 9.00 0 1 2 3 4 5 6 PIN IN WATTS Crss 10 7 POUT 0 5 10 15 20 25 30 VDS IN VOLTS GAIN IV CURVE ID AND GM VS VGS F1C 4 DIE IV CURVE F1C 4 DIE GM & ID vs VGS 35 100 30 Id 25 10 20 15 Gm 10 1 5 0 0 2 4 6 8 10 12 14 16 18 20 0.1 Vds in Volts 0 Vg = 2V Vg = 4V Vg = 6V Vg = 8V S11 AND S22 SMITH CHART Vg = 10V 2 Vg = 12V 4 6 8 10 12 14 Vgs in Volts PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com