polyfet rf devices F2013 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 20 Watts Gemini Package Style AK TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 80 Watts Junction to Case Thermal Resistance Maximum Junction Temperature 2.1 o C/W 200 o C Storage Temperature DC Drain Current -65 o C to 150o C RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gai η Drain Efficiency VSWR MIN TYP 6.4 A Drain to Source Voltage Gate to Source Voltage 70 V 30V 70 V 20WATTS OUTPUT ) MAX 10 45 Load Mismatch Toleranc Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 1.6 A, Vds = 28.0 V, F = 1000 MHz % Idq = 1.6 A, Vds = 28.0 V, F = 1000 MHz Relative Idq = 1.6 A, Vds = 28.0 V, F = 1000 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER Bvdss Drain Breakdown Voltag Idss Zero Bias Drain Curren Igss Gate Leakage Curren Vgs Gate Bias for Drain Curren gM Forward Transconductanc Rdson Saturation Resistanc Idsat MIN TYP MAX 65 1 UNITS TEST CONDITIONS V Ids = 0.04 A, Vgs = 0V 0.8 mA Vds = 28.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.08 A, Vgs = Vds 0.8 Mho Vds = 10V, Vgs = 5V 1 Ohm Vgs = 20V, Ids = 4 A Saturation Curren 4.8 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitanc 36 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitanc 4 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitanc 24 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F2013 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F2013 Pout vs Pin F=1000 Mhz; Idq=1.6A; Vds=28v F2A 4 DIE CAPACITANCE 12 35 30 Gain 100 11 Ciss 25 10 Coss 20 9 Pout 10 15 8 Crss 10 Efficiency = 35% 7 5 0 6 0 1 2 3 4 5 6 7 8 1 Pin in Watts 0 POUT 5 10 PIN 15 20 25 30 VDS IN VOLTS IV CURVE ID AND GM VS VGS F2A 4 DIE IV CURVE F2A 4 DIE GM & ID vs VGS 6 10 Id 5 4 1 3 Gm 2 0.1 1 0 0 2 4 6 8 10 12 14 16 18 20 0.01 VDS IN VOLTS 0 VGS = 2V VGS = 4V VGS = 6V VGS = 8V S11 AND S22 SMITH CHART VGS = 10V 2 VGS 12V 4 6 8 10 12 14 16 18 Vgs in Volts PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com