Polyfet F2041 Patented gold metalized silicon gate enhancement mode rf power vdmos transistorã Datasheet

polyfet rf devices
F2041
General Description
PATENTED GOLD METALIZED
SILICON GATE ENHANCEMENT MODE
RF POWER VDMOS TRANSISTOR
Silicon VDMOS and LDMOS
transistors designed specifically
for broadband RF applications.
Suitable for Military Radios,
Cellular and Paging Amplifier Base
Stations, Broadcast FM/AM, MRI,
Laser Driver and others.
15 Watts Gemini
Package Style AK
TM
"Polyfet" process features
gold metal for greatly extended
lifetime. Low output capacitance
and high Ft enhance broadband
performance
HIGH EFFICIENCY, LINEAR,
HIGH GAIN, LOW NOISE
o
ABSOLUTE MAXIMUM RATINGS (TC = 25 C)
Total
Device
Dissipation
70 Watts
Junction to
Case Thermal
Resistance
Maximum
Junction
Temperature
2.5 o C/W
200 o C
Storage
Temperature
DC Drain
Current
-65 o C to 150o C
RF CHARACTERISTICS (
SYMBOL
PARAMETER
Gps
Common Source Power Gai
η
Drain Efficiency
VSWR
MIN
TYP
4.8 A
Drain to
Source
Voltage
Gate to
Source
Voltage
70 V
30V
70 V
15WATTS OUTPUT )
MAX
10
45
Load Mismatch Toleranc
Drain to
Gate
Voltage
20:1
UNITS
TEST CONDITIONS
dB
Idq = 1.2 A, Vds = 28.0 V, F = 1000 MHz
%
Idq = 1.2 A, Vds = 28.0 V, F = 1000 MHz
Relative
Idq = 1.2 A, Vds = 28.0 V, F = 1000 MHz
ELECTRICAL CHARACTERISTICS (EACH SIDE)
SYMBOL
PARAMETER
MIN
TYP
MAX
65
UNITS
TEST CONDITIONS
Bvdss
Drain Breakdown Voltag
Idss
Zero Bias Drain Curren
Igss
Gate Leakage Curren
Vgs
Gate Bias for Drain Curren
gM
Forward Transconductanc
0.6
Mho
Vds = 10V, Vgs = 5V
Rdson
Saturation Resistanc
1.4
Ohm
Vgs = 20V, Ids = 3 A
Idsat
Saturation Curren
3.6
Amp
Vgs = 20V, Vds = 10V
Ciss
Common Source Input Capacitanc
27
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Crss
Common Source Feedback Capacitanc
3
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
Coss
Common Source Output Capacitanc
18
pF
Vds = 28.0 V, Vgs = 0V, F = 1 MHz
1
V
Ids = 0.03 A,
Vgs = 0V
0.6
mA
Vds = 28.0 V,
Vgs = 0V
1
uA
Vds = 0 V,
Vgs = 30V
7
V
Ids = 0.06 A,
Vgs = Vds
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
F2041
POUT VS PIN GRAPH
CAPACITANCE VS VOLTAGE
F2A 3 DIE CAPACITANCE VS VDS
100
Ciss
Coss
10
Crss
1
0
5
10
15
20
25
30
VDS IN VOLTS
IV CURVE
ID AND GM VS VGS
F2A 3 DIE IV CURVE
F2A 3 DIE GM & ID vs VGS
5
10
4.5
Id
4
3.5
1
3
2.5
Gm
2
1.5
0.1
1
0.5
0
0
2
4
6
8
10
12
14
16
18
20
0.01
VDS IN VOLTS
0
VGS = 2V
VGS = 4V
VGS = 6V
VGS = 8V
S11 AND S22 SMITH CHART
VGS = 10V
2
VGS 12V
4
6
8
10
12
14
16
18
Vgs in Volts
PACKAGE DIMENSIONS IN INCHES
POLYFET RF DEVICES
REVISION 8/1/97
1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com
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