polyfet rf devices F2049 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 7.5 Watts Single Ended Package Style AC TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 40 Watts Junction to Case Thermal Resistance Maximum Junction Temperature 5 o C/W 200 o C Storage Temperature DC Drain Current -65 o C to 150o C RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gai η Drain Efficiency VSWR MIN TYP 2.4 A Drain to Source Voltage Gate to Source Voltage 70 V 30V 70 V 7.5WATTS OUTPUT ) MAX 10 45 Load Mismatch Toleranc Drain to Gate Voltage 20:1 UNITS TEST CONDITIONS dB Idq = 0.6 A, Vds = 28.0 V, F = 1000 MHz % Idq = 0.6 A, Vds = 28.0 V, F = 1000 MHz Relative Idq = 0.6 A, Vds = 28.0 V, F = 1000 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN TYP MAX 65 UNITS TEST CONDITIONS Bvdss Drain Breakdown Voltag Idss Zero Bias Drain Curren Igss Gate Leakage Curren Vgs Gate Bias for Drain Curren gM Forward Transconductanc 0.6 Mho Vds = 10V, Vgs = 5V Rdson Saturation Resistanc 1.4 Ohm Vgs = 20V, Ids = 3 A Idsat Saturation Curren 3.6 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitanc 27 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitanc 3 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitanc 18 pF Vds = 28.0 V, Vgs = 0V, F = 1 MHz 1 V Ids = 0.03 A, Vgs = 0V 0.6 mA Vds = 28.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.06 A, Vgs = Vds POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F2049 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F2049 POUT VS PIN F=1000 MHZ; IDQ=0.6A; VDS=28V F2A 3 DIE CAPACITANCE VS VDS 15 12.00 100 13 11.00 Ciss 11 Coss 10.00 9 10 7 9.00 Crss 5 Efficiency = 35% 8.00 3 1 7.00 0 0.5 1 1.5 2 PIN IN WATTS 1 2.5 POUT 0 5 10 15 20 25 30 VDS IN VOLTS GAIN IV CURVE ID AND GM VS VGS F2A 3 DIE IV CURVE F2A 3 DIE GM & ID vs VGS 5 10 4.5 Id 4 3.5 1 3 2.5 Gm 2 1.5 0.1 1 0.5 0 0 2 4 6 8 10 12 14 16 18 20 0.01 VDS IN VOLTS 0 VGS = 2V VGS = 4V VGS = 6V VGS = 8V S11 AND S22 SMITH CHART VGS = 10V 2 VGS 12V 4 6 8 10 12 14 16 18 Vgs in Volts PACKAGE DIMENSIONS IN INCHES POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com