Jiangsu FBAS70BRW Surface mount schottky barrier diode array Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
FBAS70BRW
SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAYS
WBFBP-06C
(2×2×0.5)
unit: mm
DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode
1
FEATURES
z
Low Forward Voltage Drop
z
Fast Switching
z
Ultra-Small Surface Mount Package
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
BAS70BRW
Marking:K75
Maximum Ratings
@TA=25
Parameter
Symbol
Limits
Unit
VRRM
VRWM
VR
70
V
IF
70
mA
Peak forward surge current @<1.0s
IFSM
100
mA
Power Dissipation
Pd
150
mW
RθJA
625
℃/W
TJ
125
℃
TSTG
-55 to +125
℃
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking
Voltage
Forward Continuous Current
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature range
Electrical Ratings @TA=25℃
Parameter
Max.
Unit
VF1
0.41
V
IF=1mA
VF2
1
V
IF=15mA
Reverse current
IR
100
nA
VR=50V
Capacitance between terminals
CT
2
pF
VR=0V,f=1MHz
Reverse Recovery Time
trr
5
ns
Forward voltage
Symbol
Min.
Typ.
Conditions
IF=IR=10mA
Irr=0.1XIR,RL=100Ω
Typical Characteristics
Symbol
A
A1
b
D
E
D1
E1
e
L
k
z
Dimensions In Millimeters
Min.
Max.
0.450
0.550
0.000
0.100
0.150
0.250
1.900
2.100
1.900
2.100
0.420 REF.
0.420 REF.
0.650 TYP.
0.400 REF.
0.300 REF.
0.500 REF.
Dimensions In Inches
Min.
Max.
0.018
0.022
0.000
0.004
0.006
0.010
0.075
0.083
0.075
0.083
0.017 REF.
0.017 REF.
0.026 TYP.
0.016 REF.
0.012 REF.
0.020 REF.
APPLICATION CIRCUITS
Bridge rectifiers
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