EIC FBR802 Fast recovery Datasheet

FBR800 - FBR810
FAST RECOVERY
BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
BR10
φ
FEATURES :
*
*
*
*
*
*
*
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Fast switching for high efficiency
Ideal for printed circuit board
0.520 (13.20)
0.480 (12.20)
0.158 (4.00)
0.142 (3.60)
AC
0.77 (19.56)
0.73 (18.54)
0.290 (7.36)
0.210 (5.33)
AC
0.052 (1.32)
0.048 (1.22)
* Pb / RoHS Free
MECHANICAL DATA :
0.75 (19.1)
Min.
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per
MIL - STD 202 , Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 6.1 grams
0.30 (7.62)
0.25 (6.35)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
FBR FBR FBR FBR FBR FBR FBR
800 801 802 804 806 808 810
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Maximum Average Forward Current Tc = 50 °C
IF(AV)
8.0
A
IFSM
200
A
It
VF
2
160
1.3
AS
V
IR
10
µA
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage drop per Diode at IF = 4.0 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time (Note 1)
IR(H)
Trr
2
µA
200
150
250
500
ns
2.5
°C/W
Operating Junction Temperature Range
RθJC
TJ
- 50 to + 150
°C
Storage Temperature Range
TSTG
- 50 to + 150
°C
Typical Thermal Resistance per diode (Note 2)
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK (8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.
Page 1 of 2
Rev. 02 : March 24, 2005
RATING AND CHARACTERISTIC CURVES ( FBR800 - FBR810 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
Trr
10 Ω
+ 0.5
+
D.U.T.
0
PULSE
GENERATOR
( NOTE 2 )
50 Vdc
(approx)
1Ω
- 0.25
OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
1
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
200
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
10
8
6
4
2
Tc = 55 ° C
160
120
80
40
60Hz RESISTIVE OR INDUCTIVE LOAD
0
0
25
50
75
100
125
150
0
175
1
CASE TEMPERATURE, ( °C)
2
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
6
10
20
40
60
100
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
100
10
Pulse W idth = 300 µs
2% Duty Cycle
TJ = 100 °C
REVERSE CURRENT,
MICROAMPERES
FORWARD CURRENT, AMPERES
4
NUMBER OF CYCLES AT 60Hz
TJ = 25 °C
10
1.0
1.0
0.1
TJ = 25 °C
0.01
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 24, 2005
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