Sanyo FC113 Pnp epitaxial planar silicon composite transistor switching application Datasheet

Ordering number:EN3081
FC113
PNP Epitaxial Planar Silicon Composite Transistor
Switching Applications
Features
Package Dimensions
· On-chip bias resistors (R1=10kΩ, R2=10kΩ)
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mounting efficiency greatly.
· The FC113 is formed with two chips, being equivalent to the 2SA1344, placed in one package.
· Excellent in thermal equilibrium and pair capability.
unit:mm
2067
[FC113]
Electrical Connection
E1:Emitter1
B1:Base1
C2:Collerctor2
E2:Emitter2
B2:Base2
C1:Collerctor1
SANYO:CP6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Symbol
Conditions
Ratings
Unit
–50
V
Collector-to-Emitter Voltage
VCBO
VCEO
–50
V
Emitter-to-Base Voltage
VEBO
–10
V
IC
–100
mA
Collector Current
Collector Current (Pulse)
I CP
Collector Dissipation
PC
Total Dissipation
Junction Temperature
PT
Tj
Storage Temperature
Tstg
–200
mA
200
mW
300
mW
150
˚C
–55 to+150
˚C
1 unit
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=–40V, IE=0
–0.1
µA
Collector Cutoff Current
ICEO
–0.5
µA
Emitter Cutoff Current
IEBO
hFE
VCE=–40V, IB=0
VEB=–5V, IC=0
–360
µA
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
C-E Saturation Voltage
C-B Breakdown Voltage
C-E Breakdown Voltage
fT
Cob
VI(off)
Input ON-State Voltage
VI(on)
Input Resistance
R1
R1/R2
VCE=–5V, IC=–100µA
VCE=–0.2V, IC=–10mA
–250
50
200
VCB=–10V, f=1MHz
VCE(sat) IC=–10mA. IB=–0.5mA
V(BR)CBO IC=–10µA, IE=0
V(BR)CEO IC=–100µA, RBE=∞
Input OFF-State Voltage
Resistance Ratio
VCE=–5V, IC=–10mA
VCE=–10V, IC=–5mA
–170
MHz
5.1
–0.1
pF
–0.3
–50
V
V
–50
V
–0.8
–1.1
–1.5
–1.0
–2.0
–4.0
7.0
10
13
0.9
1.0
1.1
V
V
kΩ
Note: The specifications shown above are for each individual transistor.
Marking:113
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/4139MO, TS No.3081-1/2
FC113
Sample Application Circuit
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.3081-2/2
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