SupreMOSTM FCA22N60N tm N-Channel MOSFET 600V, 22A, 0.165Ω Features Description • RDS(on) = 0.140Ω ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. • BVDSS>650V @ TJ = 150oC • Ultra Low Gate Charge ( Typ. Qg = 45nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant D D G TO-3PN G DS S MOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current FCA22N60N 600 Units V ±30 V Continuous (TC = 25oC) 22 Continuous (TC = 100oC) 13.8 IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current 7.3 A EAR Repetitive Avalanche Energy 2.75 mJ dv/dt Pulsed A Peak Diode Recovery dv/dt 66 A (Note 2) 672 mJ (Note 3) MOSFET dv/dt 20 100 (TC = 25oC) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL (Note 1) Derate above 25oC V/ns 205 W 1.64 W/oC -55 to +150 oC 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FCA22N60N RθJC Thermal Resistance, Junction to Case 0.61 RθJS Thermal Resistance, Case to Heat Sink (Typical) 0.24 RθJA Thermal Resistance, Junction to Ambient ©2009 Fairchild Semiconductor Corporation FCA22N60N Rev. A2 Units oC/W 40 1 www.fairchildsemi.com FCA22N60N N-Channel MOSFET July 2009 Device Marking FCA22N60N Device FCA22N60N Package TO-3PN Reel Size - Tape Width - Quantity 30 Electrical Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1mA, VGS = 0V,TJ = 25oC 600 - - ID = 1mA, VGS = 0V, TJ = 150oC 650 - - ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 1mA, Referenced to 25oC - 0.68 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 480V, VGS = 0V - - 10 VDS = 480V, TJ = 125oC - - 100 µA IGSS Gate to Body Leakage Current VGS = ±50V, VDS = 0V - - ±100 V nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA 2.0 3 4.0 V Static Drain to Source On Resistance VGS = 10V, ID = 11A - 0.140 0.165 Ω gFS Forward Transconductance VDS = 20V, ID = 11A - 22 - S VDS = 100V, VGS = 0V f = 1MHz - 1950 - pF - 75.9 - pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance - 3 - pF Coss Output Capacitance VDS = 380V, VGS = 0V, f = 1MHz - 43.2 - pF Cosseff. Effective Output Capacitance VDS = 0V to 480V, VGS = 0V - 196.4 - pF Qg(tot) Total Gate Charge at 10V - 45 - nC Qgs Gate to Source Gate Charge - 8.7 - nC Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) VDS = 380V, ID = 11A, VGS = 10V (Note 4) Drain Open, f=1MHz - 14.5 - nC - 1 - Ω - 16.9 - ns - 16.7 - ns - 49 - ns - 4 - ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380V, ID = 11A RG = 4.7Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 22 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 66 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 11A - - 1.2 V trr Reverse Recovery Time - 350 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 11A dIF/dt = 100A/µs - 6 - µC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 7.3A, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 22A, di/dt ≤ 200A/µs, VDD ≤ 380V, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics FCA22N60N Rev. A2 2 www.fairchildsemi.com FCA22N60N N-Channel MOSFET Package Marking and Ordering Information TC = 25oC unless otherwise noted FCA22N60N N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 100 *Notes: 1. 250µs Pulse Test o ID,Drain Current[A] ID,Drain Current[A] 2. TC = 25 C VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.0 V 10 1 o 150 C o -55 C 10 o 25 C 0.1 0.3 1 VDS,Drain-Source Voltage[V] 1 10 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 6 7 VGS,Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 0.3 VGS = 10V 0.2 VGS = 20V o 150 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 0.1 0 10 20 30 40 ID, Drain Current [A] 50 1 0.0 60 Figure 5. Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd VGS, Gate-Source Voltage [V] 10000 Ciss 1000 Crss 100 1 0.1 FCA22N60N Rev. A2 1.5 10 Coss 10 2. 250µs Pulse Test 0.5 1.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 1E5 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.4 RDS(ON) [Ω ], Drain-Source On-Resistance *Notes: 1. VDS = 20V 2. 250µs Pulse Test *Note: 1. VGS = 0V 2. f = 1MHz 1 10 100 VDS, Drain-Source Voltage [V] VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 *Note: ID = 11A 0 600 0 3 10 20 30 40 Qg, Total Gate Charge [nC] 50 www.fairchildsemi.com Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 1mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 *Notes: 1. VGS = 10V 2. ID = 11A 0.5 0.0 -100 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 100 25 10µs 20 ID, Drain Current [A] ID, Drain Current [A] 100µs 10 1ms 10ms Operation in This Area is Limited by R DS(on) 1 DC 15 10 *Notes: 0.1 5 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.01 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Transient Thermal Response Curve Thermal Response [Zθ JC] 1 0.5 0.2 0.1 PDM 0.1 t1 0.05 *Notes: 1. ZθJC(t) = 0.61 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 FCA22N60N Rev. A2 t2 o 0.02 0.01 -4 10 -3 -2 -1 10 10 10 Rectangular Pulse Duration [sec] 4 1 10 www.fairchildsemi.com FCA22N60N N-Channel MOSFET Typical Performance Characteristics (Continued) FCA22N60N N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FCA22N60N Rev. A2 5 www.fairchildsemi.com FCA22N60N N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + V DS _ I SD L D r iv e r R V VGS ( D r iv e r ) GS G S am e T ype as D U T V DD • d v / d t c o n t r o lle d b y R G • IS D c o n t r o lle d b y p u ls e p e r io d G a te P u ls e W id t h D = -------------------------G a te P u ls e P e r io d 10V IF M , B o d y D io d e F o r w a r d C u r r e n t I SD ( DUT ) d i/d t IR M B o d y D io d e R e v e r s e C u r r e n t V DS ( DUT ) B o d y D io d e R e c o v e r y d v /d t V V SD DD B o d y D io d e F o r w a r d V o lt a g e D r o p FCA22N60N Rev. A2 6 www.fairchildsemi.com FCA22N60N N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FCA22N60N Rev. A2 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40 FCA22N60N Rev. A2 8 www.fairchildsemi.com FCA22N60N N-Channel MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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