Fairchild FCPF380N60 N-channel superfet ii mosfet Datasheet

FCP380N60 / FCPF380N60
N-Channel SuperFET® II MOSFET
600 V, 10.2 A, 380 mΩ
Features
Description
• 650 V @TJ = 150°C
SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior
switching performance, and withstand extreme dv/dt rate and
higher avalanche energy. Consequently, SuperFETII MOSFET is
suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
• Max. RDS(on) = 380 mΩ
• Ultra low gate charge (typ. Qg = 30 nC)
• Low effective output capacitance (typ. Coss.eff = 95 pF)
• 100% avalanche tested
Applications
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
D
G
TO-220
TO-220F
GD S
G D S
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
ID
Drain Current
FCP380N60 FCPF380N60
600
-DC
±20
-AC
(f >1 HZ)
V
±30
-Continuous (TC = 25oC)
10.2
10.2*
-Continuous (TC = 100oC)
6.4
6.4*
(Note 1)
IDM
Drain Current
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
2.3
A
EAR
Repetitive Avalanche Energy
(Note 1)
1.06
mJ
Peak Diode Recovery dv/dt
(Note 3)
(Note 2)
30.6*
211.6
A
mJ
20
MOSFET dv/dt
V/ns
100
(TC = 25oC)
106
31
W
- Derate above 25oC
0.85
0.25
W/oC
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
30.6
A
EAS
dv/dt
- Pulsed
Unit
V
-55 to +150
oC
300
oC
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FCP380N60 FCPF380N60
RθJC
Thermal Resistance, Junction to Case
1.18
4
RθCS
Thermal Resistance, Case to Heat Sink (Typical)
0.5
0.5
RθJA
Thermal Resistance, Junction to Ambient
62.5
62.5
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C5
1
Unit
oC/W
www.fairchildsemi.com
FCP380N60 / FCPF380N60 N-Channel MOSFET
March 2013
Device Marking
FCP380N60
Device
FCP380N60
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FCPF380N60
FCPF380N60
TO-220F
-
-
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS = 0 V, ID = 10 mA, TJ = 25°C
600
-
-
V
VGS = 0 V, ID = 10 mA, TJ = 150°C
650
-
-
V
-
0.6
-
V/oC
-
700
-
V
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ΔBVDSS
ΔTJ
BVDS
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
IDSS
Zero Gate Voltage Drain Current
VDS = 480 V, VGS = 0 V
-
-
1
VDS = 480 V, TC = 125oC
-
-
10
IGSS
Gate to Body Leakage Current
VGS = ±20 V, VDS = 0 V
-
-
±100
2.5
-
3.5
V
-
0.33
0.38
Ω
-
11
-
S
ID = 10 mA, Referenced to
25oC
VGS = 0 V, ID = 10 A
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250 μA
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = 10 V, ID = 5 A
VDS = 20 V, ID = 5 A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS = 380 V, VGS = 0 V, f = 1.0 MHz
Coss eff.
Effective Output Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
ESR
Equivalent Series Resistance
-
1250
1665
pF
-
905
1205
pF
-
45
60
pF
-
23
-
pF
VDS = 0 V to 480 V, VGS = 0 V
-
95
-
pF
VDS = 380 V, ID = 5 A
VGS = 10 V
-
30
40
nC
-
5
-
nC
-
10
-
nC
VDS = 25 V, VGS = 0 V
f = 1 MHz
(Note 4)
Drain Open
Ω
1
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 380 V, ID = 5 A
VGS = 10 V, R = 4.7 Ω
(Note 4)
-
14
38
-
7
24
ns
ns
-
45
100
ns
-
6
22
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
10.2
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
30.6
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 5 A
-
-
1.2
V
trr
Reverse Recovery Time
-
240
-
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 5 A
dIF/dt = 100 A/μs
-
2.7
-
μC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 2.3 A, VDD = 50 V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 5.1 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C5
2
www.fairchildsemi.com
FCP380N60 / FCPF380N60 N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
VGS = 15.0V
10.0V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
10
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
ID, Drain Current[A]
ID, Drain Current[A]
50
1
o
150 C
10
o
25 C
*Notes:
1. 250μs Pulse Test
o
-55 C
o
2. TC = 25 C
0.1
0.1
1
1
VDS, Drain-Source Voltage[V]
10
3
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
100
IS, Reverse Drain Current [A]
1.0
0.8
0.6
VGS = 10V
0.4
VGS = 20V
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
o
*Note: TC = 25 C
0.2
0
5
10
15
20
ID, Drain Current [A]
25
1
0.3
30
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Ciss
100
1
0.1
0.1
1.5
10
1000
10
0.6
0.9
1.2
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10000
Capacitances [pF]
8
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1.2
RDS(ON) [Ω],
Drain-Source On-Resistance
4
5
6
7
VGS, Gate-Source Voltage[V]
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1
10
100
VDS, Drain-Source Voltage [V]
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C5
VDS = 120V
VDS = 300V
VDS = 480V
8
6
4
2
*Note: ID = 5A
0
1000
0
3
9
18
27
Qg, Total Gate Charge [nC]
36
www.fairchildsemi.com
FCP380N60 / FCPF380N60 N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 10mA
0.8
-80
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 5A
0.5
-80
160
Figure 9. Maximum Safe Operating Area
vs. Case Temperature - FCP380N60
-40
0
40
80
120
o
TJ, Junction Temperature [ C]
Figure 10. Maximum Safe Operating Area
vs. Case Temperature - FCPF380N60
100
100
10μs
ID, Drain Current [A]
ID, Drain Current [A]
10μs
100μs
1ms
10
10ms
1
DC
Operation in This Area
is Limited by R DS(on)
0.1
*Notes:
100μs
1ms
10
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
*Notes:
0.1
o
o
1. TC = 25 C
1. TC = 25 C
o
0.01
0.1
160
o
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
0.01
0.1
1000
Figure 11. Maximum Drain Current
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 12. Eoss vs. Drain to Source Voltage
Switching Capability
6
12
4
EOSS, [μJ]
ID, Drain Current [A]
5
9
6
3
2
3
1
0
25
0
50
75
100
125
o
TC, Case Temperature [ C]
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C5
150
4
0
100
200
300
400
500
VDS, Drain to Source Voltage [V]
600
www.fairchildsemi.com
FCP380N60 / FCPF380N60 N-Channel MOSFET
Typical Performance Characteristics (Continued)
FCP380N60 / FCPF380N60 N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve - FCP380N60
Thermal Response [ZθJC]
2
1
0.5
0.2
0.1
0.1
PDM
0.05
t1
t2
*Notes:
0.02
o
0.01
1. ZθJC(t) = 1.18 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
-5
10
-4
10
-3
-2
10
10
Rectangular Pulse Duration [sec]
-1
0
10
10
Figure 14. Transient Thermal Response Curve - FCPF380N60
Thermal Response [ZθJC]
5
0.5
1
0.2
0.1
PDM
0.05
0.1
t1
0.02
t2
0.01
*Notes:
o
1. ZθJC(t) = 4 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
-5
10
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C5
-4
10
-3
-2
-1
10
10
10
1
Rectangular Pulse Duration [sec]
5
10
100
www.fairchildsemi.com
FCP380N60 / FCPF380N60 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C5
6
www.fairchildsemi.com
FCP380N60 / FCPF380N60 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C5
7
www.fairchildsemi.com
FCP380N60 / FCPF380N60 N-Channel MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C5
8
www.fairchildsemi.com
FCP380N60 / FCPF380N60 N-Channel MOSFET
Package Dimensions
TO-220F (Retractable)
* Front/Back Side Isolation Voltage : AC 2500V
Dimensions in Millimeters
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C5
9
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I64
©2012 Fairchild Semiconductor Corporation
FCP380N60 / FCPF380N60 Rev. C5
10
www.fairchildsemi.com
FCP380N60 / FCPF380N60 N-Channel MOSFET
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