UniFET TM FDA16N50 500V N-Channel MOSFET Features Description • 16.5A, 500V, RDS(on) = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 32 nC) • Low Crss ( typical 20 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability D G TO-3P FDA Series G DS S Absolute Maximum Ratings Symbol Parameter FDA16N50 Unit VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 780 mJ IAR Avalanche Current (Note 1) 16.5 A EAR Repetitive Avalanche Energy (Note 1) 20.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (Note 1) (TC = 25°C) - Derate above 25°C 500 V 16.5 9.9 A A 66 A 4.5 V/ns 205 2.1 W W/°C -55 to +150 °C 300 °C Thermal Characteristics Typ Max Unit RθJC Symbol Thermal Resistance, Junction-to-Case Parameter -- 0.6 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.24 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W ©2007 Fairchild Semiconductor Corporation FDA16N50 Rev. B 1 www.fairchildsemi.com FDA16N50 500V N-Channel MOSFET April 2007 Device Marking Device Package Reel Size Tape Width Quantity FDA16N50 FDA16N50 TO-3P - - 30 FDA16N50 FDA16N50_F109 TO-3PN - - 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min. Typ. Max Units 500 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250μA ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25°C -- 0.5 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C --- --- 1 10 μA μA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.31 0.38 Ω -- 23 -- S -- 1495 1945 pF -- 235 310 pF -- 20 30 pF -- 40 90 ns -- 150 310 ns -- 65 140 ns -- 80 170 ns -- 32 45 nC -- 8.5 -- nC -- 14 -- nC On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250μA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 8.3A gFS Forward Transconductance VDS = 40V, ID = 8.3A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 250V, ID = 16A RG = 25Ω (Note 4, 5) VDS = 400V, ID = 16A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.2 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 37 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 16.5A -- -- 1.4 V trr Reverse Recovery Time -- 490 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 16A dIF/dt =100A/μs -- 5.0 -- μC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.1mH, IAS = 16.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 16.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDA16N50 Rev. B 2 www.fairchildsemi.com FDA16N50 500V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V 2 10 Top : 1 10 ID, Drain Current [A] ID, Drain Current [A] Figure 2. Transfer Characteristics 0 10 o 1 150 C 10 o 25 C o -55 C * Notes : 1. VDS = 40V * Notes : 1. 250μs Pulse Test -1 10 2. 250μs Pulse Test o 2. TC = 25 C -1 0 10 0 10 2 1 10 10 4 6 8 10 12 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue IDR, Reverse Drain Current [A] RDS(ON) [Ω], Drain-Source On-Resistance 0.6 0.5 VGS = 10V 0.4 VGS = 20V 0.3 o * Note : TJ = 25 C 0.2 1 10 o 150 C o 25 C 2. 250μs Pulse Test 0 0 5 10 15 20 25 30 35 10 40 0.2 ID, Drain Current [A] 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2.0 2.2 2.4 Figure 6. Gate Charge Characteristics 4000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd VGS, Gate-Source Voltage [V] Crss = Cgd 3000 Coss 2000 1.0 VSD, Source-Drain voltage [V] Figure 5. Capacitance Characteristics Capacitances [pF] * Notes : 1. VGS = 0V Ciss * Note ; 1. VGS = 0 V 1000 2. f = 1 MHz Crss 10 VDS = 100V 8 VDS = 400V VDS = 250V 6 4 2 * Note : ID = 16A 0 -1 10 0 10 0 1 10 VDS, Drain-Source Voltage [V] FDA16N50 Rev. B 0 10 20 30 40 QG, Total Gate Charge [nC] 3 www.fairchildsemi.com FDA16N50 500V N-Channel MOSFET Typical Performance Characteristics FDA16N50 500V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 * Notes : 1. VGS = 0 V 0.9 2. ID = 250 μA 0.8 -100 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 * Notes : 1. VGS = 10 V 0.5 2. ID = 8.3 A -50 0 50 100 150 0.0 -100 200 o -50 0 TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 20 2 10 1 10 Operation in This Area is Limited by R DS(on) 0 10 15 ID, Drain Current [A] ID, Drain Current [A] 10 μs 100 μs 1 ms 10 ms 100 ms DC * Notes : -1 10 10 5 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 0 25 2 10 10 50 75 100 125 150 o VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Figure 11. Transient Thermal Response Curve ZθJC(t), Thermal Response 10 0 D = 0 .5 0 .2 10 -1 0 .1 0 .0 5 * N o te s : 0 .0 2 0 .0 1 10 o -2 10 1 . Z θ J C (t) = 0 .6 C /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) s in g le p u ls e -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FDA16N50 Rev. B 4 www.fairchildsemi.com FDA16N50 500V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDA16N50 Rev. B 5 www.fairchildsemi.com FDA16N50 500V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FDA16N50 Rev. B 6 www.fairchildsemi.com TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters FDA16N50 Rev. B 7 www.fairchildsemi.com FDA16N50 500V N-Channel MOSFET Mechanical Dimensions FDA16N50 500V N-Channel MOSFET Mechanical Dimensions TO-3PN Dimensions in Millimeters FDA16N50 Rev. B 8 www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I24 9 FDA16N50 Rev. B www.fairchildsemi.com FDA16N50 500V N-Channel MOSFET tm