TM UniFET FDAF75N28 280V N-Channel MOSFET Features Description • 46A, 280V, RDS(on) = 0.041Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 111 nC) • Low Crss ( typical 90 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. • Fast switching • 100% avalanche tested • Improved dv/dt capability D G G D S TO-3PF FDAF Series S Absolute Maximum Ratings Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed VGSS Gate-Source voltage EAS IAR FDAF75N28 Unit 280 V 46 28 A A 184 A (Note 1) ± 30 V Single Pulsed Avalanche Energy (Note 2) 3080 mJ Avalanche Current (Note 1) 46 A EAR Repetitive Avalanche Energy (Note 1) 21.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation 215 1.72 W W/°C -55 to +150 °C 300 °C (TC = 25°C) - Derate above 25°C TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds Thermal Characteristics Min. Max. Unit RθJC Symbol Thermal Resistance, Junction-to-Case Parameter -- 0.58 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W ©2006 Fairchild Semiconductor Corporation FDAF75N28 Rev. A 1 www.fairchildsemi.com FDAF75N28 280V N-Channel MOSFET October 2006 Device Marking Device Package Reel Size Tape Width Quantity FDAF75N28 FDAF75N28 TO-3PF -- -- 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Units 280 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -- 0.28 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 280V, VGS = 0V VDS = 224V, TC = 125°C --- --- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA 3.0 -- 5.0 V -- 0.035 0.041 Ω -- 75 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 23A gFS Forward Transconductance VDS = 40V, ID = 23A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 5040 6700 pF -- 915 1215 pF -- 90 135 pF Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge VDD = 140V,ID = 75A RG =25Ω -- 105 146 ns -- 580 538 ns -- 190 418 ns -- 310 262 ns -- 111 144 nC (Note 4, 5) Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 224V, ID = 75A VGS = 10V (Note 4, 5) -- 31 -- nC -- 49 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 75 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 300 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 46A -- -- 1.4 V trr Reverse Recovery Time -- 320 -- ns Qrr Reverse Recovery Charge VGS = 0V, IS = 75A dIF/dt =100A/µs -- 3.5 -- µC (Note 4) NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 2.4mH, IAS = 46A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 46A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics 2 FDAF75N28 Rev. A www.fairchildsemi.com FDAF75N28 280V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ID, Drain Current [A] 2 10 ID, Drain Current [A] 2 10 1 10 o 150 C 1 10 o 25 C o -55 C * Notes : 1. 250µs Pulse Test * Notes : 1. VDS = 40V o 2. TC = 25 C 0 10 2. 250µs Pulse Test 0 -1 0 10 10 1 10 10 2 4 6 VDS, Drain-Source Voltage [V] 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 0.09 IDR, Reverse Drain Current (A) 200 0.08 0.07 VGS = 10V 0.06 0.05 VGS = 20V 0.04 100 o 150 C 10 o 25 C * Notes : 1. VGS = 0V o * Note : TJ = 25 C 2. 250µs Pulse Test 0.03 0 25 50 75 100 125 150 175 200 225 1 0.2 250 0.4 ID, Drain Current [A] 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-Drain voltage (V) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics 10000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss VGS, Gate-Source Voltage (V) Coss = Cds + Cgd Crss = Cgd 8000 Ciss Capacitances (pF) 12 VGS, Gate-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage RDS(ON) [Ω], Drain-Source On-Resistance 8 6000 4000 * Note ; 1. VGS = 0 V Crss 2. f = 1 MHz 2000 VDS = 56V 10 VDS = 140V VDS = 224V 8 6 4 2 * Note : ID = 75A 0 -1 10 0 10 1 10 0 50 0 VDS, Drain-Source Voltage (V) 40 60 80 100 120 QG, Total Gate Charge (nC) 3 FDAF75N28 Rev. A 20 www.fairchildsemi.com FDAF75N28 280V N-Channel MOSFET Typical Performance Characteristics FDAF75N28 280V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 1.1 1.0 0.9 * Notes : 1. VGS = 0 V 2. ID = 250 µA 0.8 -100 -50 0 50 100 150 2.5 rDS(on), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 0.5 * Notes : 1. VGS = 10 V 2. ID = 23 A 0.0 -100 200 -50 0 o 100 150 200 TJ, Junction Temperature ( C) Figure 9. Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 3 10 50 10 µs 100 µs 1 ms 1 10 40 ID, Drain Current (A) 2 10 ID, Drain Current [A] 50 o TJ, Junction Temperature ( C) 10 ms 100 ms Operation in This Area is Limited by R DS(on) DC 0 10 * Notes : o 1. TC = 25 C -1 10 30 20 10 o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 0 25 2 10 10 50 75 VDS, Drain-Source Voltage [V] 100 125 150 o TC, Case Temperature ( C) Figure 11. Transient Thermal Response Curve 10 0 .2 -1 0 .1 0 .0 5 * N o te s : 1 . Z θ J C ( t) = 0 .5 8 0 .0 2 0 .0 1 10 o C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C ( t) -2 PDM θJC (t), Thermal Response D = 0 .5 Z s in g le p u ls e t1 t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ] 4 FDAF75N28 Rev. A www.fairchildsemi.com FDAF75N28 280V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 FDAF75N28 Rev. A www.fairchildsemi.com FDAF75N28 280V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 FDAF75N28 Rev. A www.fairchildsemi.com FDAF75N28 280V N-Channel MOSFET Mechanical Dimensions TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 2.00 ±0.20 2.00 ±0.20 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 0.85 ±0.03 22.00 ±0.20 23.00 ±0.20 10 ° 10.00 ±0.20 (1.50) 2.00 ±0.20 14.50 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters 7 FDAF75N28 Rev. A www.fairchildsemi.com FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I21