Fairchild FDB12N50TM N-channel mosfet 500v, 11.5a, 0.65î© Datasheet

UniFETTM
FDB12N50TM
tm
N-Channel MOSFET
500V, 11.5A, 0.65Ω
Features
Description
• RDS(on) = 0.55Ω ( Typ.)@ VGS = 10V, ID = 6A
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low gate charge ( Typ. 22nC)
• Low Crss ( Typ. 12pF)
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS compliant
D
D
G
D2-PAK
G
S
FDB Series
I2-PAK
FDI Series
G D S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
-Continuous (TC = 25oC)
Ratings
500
Units
V
±30
V
11.5
ID
Drain Current
IDM
Drain Current
(Note 1)
46
A
EAS
Single Pulsed Avalanche Energy
(Note 2)
456
mJ
IAR
Avalanche Current
(Note 1)
11.5
A
EAR
Repetitive Avalanche Energy
(Note 1)
16.7
mJ
dv/dt
Peak Diode Recovery dv/dt
4.5
V/ns
-Continuous (TC = 100oC)
- Pulsed
(Note 3)
(TC = 25oC)
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
- Derate above 25oC
A
6.9
165
W
1.33
W/oC
-55 to +150
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
Ratings
RθJC
Thermal Resistance, Junction to Case
RθJA*
Thermal Resistance, Junction to Ambient*
40
RθJA
Thermal Resistance, Junction to Ambient
62.5
Units
0.75
o
C/W
*When mounted on the minimum pad size recommended (PCB Mount)
©2007 Fairchild Semiconductor Corporation
FDB12N50TM Rev. A1
1
www.fairchildsemi.com
FDB12N50 / FDI12N50 N-Channel MOSFET
June 2007
Device Marking
FDB12N50
Device
FDB12N50TM
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
FDI12N50
FDI12N50TU
I2-PAK
-
-
50
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
ID = 250μA, VGS = 0V, TJ = 25oC
500
-
-
V
ID = 250μA, Referenced to 25oC
-
0.66
-
V/oC
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
VDS = 500V, VGS = 0V
-
-
1
VDS = 400V, TC = 125oC
-
-
10
VGS = ±30V, VDS = 0V
-
-
±100
3.0
-
5.0
V
-
0.55
0.65
Ω
-
11
-
S
μA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
gFS
Forward Transconductance
VGS = 10V, ID = 6A
VDS = 25V, ID = 6A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V, ID = 11.5A
VGS = 10V
(Note 4, 5)
-
985
1315
pF
-
140
190
pF
-
12
17
pF
-
22
30
nC
-
6
-
nC
-
10
-
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID = 11.5A
RG = 25Ω
(Note 4, 5)
-
25
60
ns
-
60
130
ns
-
45
105
ns
-
35
85
ns
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
11.5
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
46
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 11.5A
-
-
1.4
V
trr
Reverse Recovery Time
VGS = 0V, ISD = 11.5A
-
370
-
ns
Qrr
Reverse Recovery Charge
dIF/dt = 100A/μs
-
3.8
-
μC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 6.9mH, IAS = 11.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 11.5A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDB12N50TM Rev. A1
2
www.fairchildsemi.com
FDB12N50 / FDI12N50 N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 2. Transfer Characteristics
30
40
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
10
10
ID,Drain Current[A]
ID,Drain Current[A]
Figure 1. On-Region Characteristics
o
150 C
o
-55 C
o
25 C
1
*Notes:
1. 250μs Pulse Test
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
o
1
2. TC = 25 C
1
10
VDS,Drain-Source Voltage[V]
0.1
20
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
6
8
VGS,Gate-Source Voltage[V]
100
IS, Reverse Drain Current [A]
1.2
1.0
VGS = 10V
0.8
VGS = 20V
0.6
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
o
0.4
*Note: TJ = 25 C
0
5
10
15
ID, Drain Current [A]
20
1
0.3
25
2. 250μs Pulse Test
0.6
0.9
1.2
1.5
VSD, Body Diode Forward Voltage [V]
1.8
Figure 6. Gate Charge Characteristics
10
1500
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
1000
500
0
0.1
FDB12N50TM Rev. A1
Crss
1
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 5. Capacitance Characteristics
2000
Coss
Capacitances [pF]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
1.4
RDS(ON) [Ω],
Drain-Source On-Resistance
4
8
6
4
2
0
30
3
VDS = 100V
VDS = 250V
VDS = 400V
*Note: ID = 11.5A
0
5
10
15
20
Qg, Total Gate Charge [nC]
25
www.fairchildsemi.com
FDB12N50 / FDI12N50 N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 250μA
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.5
2.0
1.5
1.0
*Notes:
1. VGS = 10V
2. ID = 6A
0.5
0.0
-100
200
Figure 9. Maximum Safe Operating Area
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
100
14
20μs
ID, Drain Current [A]
ID, Drain Current [A]
12
100μs
10
1ms
10ms
DC
1
Operation in This Area
is Limited by R DS(on)
*Notes:
0.1
8
6
4
o
1. TC = 25 C
2
o
0.01
10
2. TJ = 150 C
3. Single Pulse
1
10
100
VDS, Drain-Source Voltage [V]
0
25
800
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
Thermal Response [ZθJC]
5
1
0.5
0.1
0.2
t1
0.05
0.01
0.02
0.01
t2
*Notes:
Single pulse
1E-3
-5
10
FDB12N50TM Rev. A1
PDM
0.1
o
1. ZθJC(t) = 0.75 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
-4
10
-3
-2
-1
10
10
10
Rectangular Pulse Duration [sec]
4
0
10
1
10
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FDB12N50 / FDI12N50 N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDB12N50 / FDI12N50 N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDB12N50TM Rev. A1
5
www.fairchildsemi.com
FDB12N50 / FDI12N50 N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id th
D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/ d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
FDB12N50 / FDI12N50 Rev. A
6
www.fairchildsemi.com
4.50 ±0.20
9.90 ±0.20
+0.10
2.00 ±0.10
(0.75)
~3
0°
0.80 ±0.10
1.27 ±0.10
2.54 TYP
2.54 ±0.30
15.30 ±0.30
0.10 ±0.15
2.40 ±0.20
4.90 ±0.20
1.40 ±0.20
9.20 ±0.20
1.30 –0.05
1.20 ±0.20
(0.40)
D2-PAK
°
+0.10
0.50 –0.05
2.54 TYP
9.20 ±0.20
(2XR0.45)
4.90 ±0.20
15.30 ±0.30
10.00 ±0.20
(7.20)
(1.75)
10.00 ±0.20
(8.00)
(4.40)
0.80 ±0.10
FDB12N50TM Rev. A1
7
www.fairchildsemi.com
FDB12N50 / FDI12N50 N-Channel MOSFET
Mechanical Dimensions
I2-PAK
4.50 ±0.20
(0.40)
9.90 ±0.20
+0.10
MAX13.40
9.20 ±0.20
(1.46)
1.20 ±0.20
1.30 –0.05
0.80 ±0.10
2.54 TYP
10.08 ±0.20
1.47 ±0.10
MAX 3.00
(0.94)
13.08 ±0.20
)
5°
(4
1.27 ±0.10
+0.10
0.50 –0.05
2.54 TYP
2.40 ±0.20
10.00 ±0.20
FDB12N50TM Rev. A1
8
www.fairchildsemi.com
FDB12N50 / FDI12N50 N-Channel MOSFET
Mechanical Dimensions
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
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reserves the right to make changes at any time without notice to
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Rev. I26
FDB12N50TM Rev. A1
9
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FDB12N50 / FDI12N50 N-Channel MOSFET
tm
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