FDB390N15A N-Channel PowerTrench® MOSFET 150V, 27A, 39mΩ Features Description • RDS(on) = 33.5mΩ ( Typ.)@ VGS = 10V, ID = 27A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) Application • High Power and Current Handling Capability • DC to DC Converters • RoHS Compliant • Synchronous Rectification for Telecommunication PSU • Battery Charger • AC Motor Drives and Uninterruptible Power Supplies • Off-line UPS D D G D2-PAK G S S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt Units V ±20 V - Continuous (TC = 25oC,Silicon Limited) 27 - Continuous (TC = 100oC,Silicon Limited) 19 - Pulsed A (Note 1) 108 A (Note 2) 78 mJ (Note 3) 6.0 V/ns (TC = 25oC) 75 W - Derate above 25oC 0.5 W/oC PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds TL Ratings 150 o -55 to +175 C 300 oC Ratings Units Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to Case 2.0 RθJA Thermal Resistance, Junction to Ambient 62.5 ©2011 Fairchild Semiconductor Corporation FDB390N15A Rev. A2 1 o C/W www.fairchildsemi.com FDB390N15A N-Channel PowerTrench® MOSFET July 2011 Device Marking FDB390N15A Device FDB390N15A Package D2-PAK Reel Size 330mm Tape Width 24mm Quantity 800 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 150 - - V - 0.1 - V/oC Off Characteristics BVDSS ∆BVDSS ∆TJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250µA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 120V, VGS = 0V - - 1 VDS = 120V, TC = 150oC - - 500 IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 2.0 - 4.0 V - 33.5 39 mΩ - 33 - S ID = 250µA, Referenced to 25oC µA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250µA Static Drain to Source On Resistance gFS Forward Transconductance VGS = 10V, ID = 27A VDS = 10V, ID = 27A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss(er) Energy Related Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgs2 Gate Charge Threshold to Plateau Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance (G-S) - 965 1285 pF - 96 130 pF - 5.8 - pF 169 - pF 14.3 18.6 nC 5.0 - nC - 2.0 - nC - 3.5 - nC Drain Open,f = 1MHz - 1.4 - Ω - 14 38 ns VDD = 75V, ID = 27A VGS = 10V, RGEN = 4.7Ω - 10 30 ns VDS = 75V, VGS = 0V f = 1MHz VDS = 75V, ID = 27A VDS = 75V, ID = 27A VGS = 10V (Note 4,5) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time (Note 4,5) - 20 50 ns - 5 20 ns Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 27 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 108 A VGS = 0V, ISD = 27A - - 1.25 V VGS = 0V, ISD = 27A, VDD = 75V dIF/dt = 100A/µs (Note 4) - 63 - ns - 131 - nC VSD Drain to Source Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Starting TJ = 25°C, L = 3 mH, ISD = 7.2 A 3. ISD ≤ 27A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDB390N15A Rev. A2 2 www.fairchildsemi.com FDB390N15A N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 200 200 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V 5.0V *Notes: 1. VDS = 10V 2. 250µs Pulse Test 100 ID, Drain Current[A] ID, Drain Current[A] 100 10 10 o o 25 C 175 C *Notes: 1. 250µs Pulse Test o -55 C o 2. TC = 25 C 1 0.1 1 1 VDS, Drain-Source Voltage[V] 2 5 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 3 4 5 6 VGS, Gate-Source Voltage[V] 7 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 80 200 IS, Reverse Drain Current [A] RDS(ON) [mΩ], Drain-Source On-Resistance 100 60 VGS = 10V 40 VGS = 20V o o 25 C 175 C 10 *Notes: 1. VGS = 0V o 20 2. 250µs Pulse Test *Note: TC = 25 C 0 20 40 60 ID, Drain Current [A] 80 1 0.4 100 Figure 5. Capacitance Characteristics 1.3 Figure 6. Gate Charge Characteristics 2000 10 VGS, Gate-Source Voltage [V] 1000 Ciss Capacitances [pF] 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] 100 Coss *Note: 1. VGS = 0V 2. f = 1MHz 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1 0.1 FDB390N15A Rev. A2 1 10 VDS, Drain-Source Voltage [V] Crss VDS = 30V VDS = 75V VDS = 120V 8 6 4 2 *Note: ID = 27A 0 100 200 3 0 4 8 12 Qg, Total Gate Charge [nC] 16 www.fairchildsemi.com FDB390N15A N-Channel PowerTrench® MOSFET Typical Performance Char acteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.8 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.12 1.08 1.04 1.00 0.96 *Notes: 1. VGS = 0V 2. ID = 250µA 0.92 -80 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] *Notes: 1. VGS = 10V 2. ID = 27A 0.8 -40 0 40 80 120 160 o TJ, Junction Temperature [ C] 200 VGS= 10V 10µs 25 ID, Drain Current [A] ID, Drain Current [A] 1.2 30 100 100µs 10 Operation in This Area is Limited by R DS(on) 1 1ms 10ms DC *Notes: 0.1 20 15 10 o 1. TC = 25 C 5 o 2. TJ = 175 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] o RθJC = 2.0 C/W 0 25 200 Figure 11. Eoss vs.Drain to Source Voltage IAS, AVALANCHE CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 FDB390N15A Rev. A2 30 60 90 120 VDS, Drain to Source Voltage [V] 50 75 100 125 150 o TC, Case Temperature [ C] 175 Figure 12. Unclamped Inductive Switching Capability 1.2 EOSS, [µJ] 1.6 Figure 10. Maximum Drain Current vs. Case Temperature 300 0.0 2.0 0.4 -80 200 Figure 9. Maximum Safe Operating Area 0.01 2.4 12 10 o STARTING TJ = 25 C o STARTING TJ = 150 C 1 0.01 150 4 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD) If R = 0 tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1] 0.1 1 tAV, TIME IN AVALANCHE (ms) 10 20 www.fairchildsemi.com FDB390N15A N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDB390N15A N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) Figure 13. Transient Thermal Response Curve Thermal Response [ZθJC] 3 1 0.5 0.2 t1 0.05 0.1 t2 0.02 0.01 *Notes: o 1. ZθJC(t) = 2.0 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 FDB390N15A Rev. A2 PDM 0.1 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FDB390N15A N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDB390N15A Rev. A2 6 www.fairchildsemi.com FDB390N15A N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDB390N15A Rev. A2 7 www.fairchildsemi.com FDB390N15A N-Channel PowerTrench® MOSFET Mechanical Dimensions D2PAK Dimensions in Millimeters FDB390N15A Rev. A2 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I55 FDB390N15A Rev. 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