FDP6644/FDB6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 50 A, 30 V. RDS(ON) = 8.5 mΩ @ VGS = 10 V RDS(ON) = 10.5 mΩ @ VGS = 4.5 V • Low gate charge (27 nC typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. • Fast switching speed • High performance trench technology for extremely The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. low RDS(ON) • 175°C maximum junction temperature rating D D G G D G S TO-220 TO-263AB FDB Series FDP Series S Absolute Maximum Ratings Symbol S o TA=25 C unless otherwise noted Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ± 16 V ID Drain Current PD Parameter – Continuous (Note 1) 50 A – Pulsed (Note 1) 150 A Total Power Dissipation @ TC = 25°C Derate above 25°C TJ, TSTG Operating and Storage Junction Temperature Range 83 W 0.55 W/°C -65 to +175 °C 1.8 °C/W 62.5 °C/W Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDB6644 FDB6644 13’’ 24mm 800 units FDP6644 FDP6644 Tube n/a 45 2001 Fairchild Semiconductor Corporation FDP6644 Rev C(W) FDP6644/FDB6644 June 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 1) W DSS Single Pulse Drain-Source Avalanche Energy IAR Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 25 A 240 mJ 25 A Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 250 µA Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA IGSSF Gate–Body Leakage, Forward VGS = 16 V, VDS = 0 V 100 NA IGSSR Gate–Body Leakage, Reverse VGS = –16 V, VDS = 0 V –100 NA 3 V On Characteristics 30 ID = 250 µA, Referenced to 25°C V 26 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 µA, Referenced to 25°C –5 VGS = 10 V, ID = 25A VGS = 4.5 V, ID = 25 A VGS= 10 V, ID = 25 A, TJ=125°C 6.4 7.3 9.3 ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 25 A 98 S VDS = 15 V, f = 1.0 MHz V GS = 0 V, 3068 pF 1 1.5 mV/°C 8.5 10.5 15 60 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) 513 pF 196 pF (Note 2) 12.5 22.5 ns 8 16 ns Turn–Off Delay Time 54 86 ns tf Turn–Off Fall Time 14 26 ns Qg Total Gate Charge 27 38 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = 15 V, VGS = 10 V, VDS = 15 V, VGS = 4.5 V ID = 1 A, RGEN = 6 Ω ID = 25 A, 9 nC 7 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 25 A Voltage (Note 2) 0.8 50 A 1.3 V Notes: 1. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDP6644 Rev C(W) FDP6644/FDB6644 Electrical Characteristics FDP6644/FDB6644 Typical Characteristics 2 VGS = 10V 4.5V 3.0V 6.0V ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 50 40 30 20 2.5V 10 0 1.8 VGS = 3.0V 1.6 1.4 3.5V 4.0V 1.2 4.5V 6.0V 10V 1 0.8 0 0.5 1 1.5 0 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 50 0.02 ID =25A VGS = 10V 1.8 RDS(ON) , ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2.2 1.4 1 0.6 0.2 -50 -25 0 25 50 75 100 125 150 ID = 12A 0.016 o TA = 125 C 0.012 0.008 o TA = 25 C 0.004 175 2 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 80 TA = -55oC o 25 C IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 30 ID, DRAIN CURRENT (A) 125oC 60 40 20 VGS = 0V 10 o TA = 125 C 1 o 25 C 0.1 o -55 C 0.01 0.001 0.0001 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDP6644 Rev C(W) FDP6644/FDB6644 Typical Characteristics 4200 ID = 25A VDS = 5V 8 10V f = 1MHz VGS = 0 V 3500 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 CISS 2800 2100 1400 COSS 700 CRSS 0 0 0 10 20 30 40 0 50 5 Figure 7. Gate Charge Characteristics. 20 25 30 1000 RDS(ON) LIMIT 100 DC 1s P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 15 Figure 8. Capacitance Characteristics. 1000 1ms 100us 10ms 100ms VGS = 10V SINGLE PULSE o RθJC = 1.8 C/W 10 TC = 25oC 1 0.1 1 10 SINGLE PULSE RθJC = 1.8°C/W TC = 25°C 800 600 400 200 0 0.0001 100 0.001 VDS, DRAIN-SOURCE VOLTAGE (V) 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 10. Single Pulse Maximum Power Dissipation. 1 RθJC(t) = r(t) + RθJC RθJC = 1.8 °C/W D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 P(pk) t1 t2 TJ - TC = P * RθJC(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1. Transient thermal response will change depending on the circuit board design. FDP6644 Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3