Fairchild FDB8860 N-channel logic level powertrenchâ® mosfet Datasheet

FDB8860
tm
N-Channel Logic Level PowerTrench® MOSFET
30V, 80A, 2.6mΩ
Features
Applications
„ RDS(ON) = 1.9mΩ (Typ), VGS = 5V, ID = 80A
„ 12V Automotive Load Control
„ Qg(5) = 89nC (Typ), VGS = 5V
„ Start / Alternator Systems
„ Low Miller Charge
„ Electronic Power Steering Systems
„ Low QRR Body Diode
„ ABS
„ UIS Capability (Single Pulse and Repetitive Pulse)
„ DC-DC Converters
„ Qualified to AEC Q101
„ RoHS Compliant
©2008 Fairchild Semiconductor Corporation
FDB8860 Rev A1
1
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FDB8860 N-Channel Logic Level PowerTrench® MOSFET
May 2008
Symbol
VDSS
Drain to Source Voltage
Parameter
Ratings
30
Units
V
VGS
Gate to Source Voltage
±20
V
Drain Current
Continuous (VGS = 10V, TC < 163oC)
80
A
80
A
Continuous (VGS = 5V, TC < 162oC)
ID
Continuous (VGS = 10V, TC = 25oC, with RθJA = 43oC/W)
31
A
Figure 4
A
Single Pulse Avalanche Energy (Note 1)
947
mJ
Power Dissipation
254
W
Derate above 25oC
1.7
W/oC
-55 to +175
oC
0.59
oC/W
Pulsed
EAS
PD
TJ, TSTG
Operating and Storage Temperature
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
RθJA
Thermal Resistance Junction to Ambient (Note 2)
RθJA
Thermal Resistance Junction to Ambient
TO-263,1in2
copper pad area
62
o
43
oC/W
C/W
Package Marking and Ordering Information
Device Marking
FDB8860
Device
FDB8860
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800units
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
30
-
-
-
V
-
1
-
-
250
±100
nA
V
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 1mA, VGS = 0V
IDSS
Zero Gate Voltage Drain Current
VDS = 24V
VGS = 0V
IGSS
Gate to Source Leakage Current
VGS = ±20V
-
-
VDS = VGS, ID = 250μA
1
1.7
3
ID = 80A, VGS = 10V
-
1.6
2.3
ID = 80A, VGS = 5V
-
1.9
2.6
ID = 80A, VGS = 4.5V
-
2.1
2.7
ID = 80A, VGS = 10V,
TJ = 175°C
-
2.5
3.6
-
9460
12585
pF
-
1710
2275
pF
-
1050
1575
pF
TJ = 150°C
μA
On Characteristics
VGS(th)
RDS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
mΩ
Dynamic Characteristics
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
RG
Gate Resistance
f = 1MHz
-
1.8
-
Ω
Qg(TOT)
Total Gate Charge at 10V
VGS = 0V to 10V
-
165
214
nC
Qg(5)
Total Gate Charge at 5V
VGS = 0V to 5V
-
89
115
nC
Qg(TH)
Threshold Gate Charge
VGS = 0V to 1V
-
9.1
12
nC
Qgs
Gate to Source Gate Charge
-
26
-
nC
Qgs2
Gate Charge Threshold to Plateau
-
18
-
nC
Qgd
Gate to Drain “Miller” Charge
-
33
-
nC
FDB8860 Rev A1
VDS = 15V, VGS = 0V,
f = 1MHz
2
VDD = 15V
ID = 80A
Ig = 1.0mA
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FDB8860 N-Channel Logic Level PowerTrench® MOSFET
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
ns
Switching Characteristics
t(on)
Turn-On Time
-
-
340
td(on)
Turn-On Delay Time
-
14
-
ns
tr
Turn-On Rise Time
-
213
-
ns
td(off)
Turn-Off Delay Time
-
79
-
ns
tf
Turn-Off Fall Time
-
49
-
ns
toff
Turn-Off Time
-
-
192
ns
ISD = 80A
-
-
1.25
V
ISD = 40A
-
-
1.0
V
VDD = 15V, ID = 80A
VGS = 5V, RGS = 1Ω
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
ISD = 80A, dISD/dt = 100A/μs
-
-
43
ns
Qrr
Reverse Recovery Charge
ISD = 80A, dISD/dt = 100A/μs
-
-
29
nC
Notes:
1: Starting TJ = 25oC, L =0.47mH, IAS = 64A , VDD = 30V, VGS = 10V.
2: Pulse width = 100s
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
FDB8860 Rev A1
3
www.fairchildsemi.com
FDB8860 N-Channel Logic Level PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
POWER DISSIPATION MULIPLIER
1.2
300
VGS = 10V
ID, DRAIN CURRENT (A)
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE( oC)
NORMALIZED THERMAL
IMPEDANCE ZθJA
1
CURRENT LIMITED
BY PACKAGE
VGS = 5V
150
75
0
25
175
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs Case
Temperature
2
225
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.01
-5
10
-4
10
-3
-2
10
10
-1
0
10
1
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
3000
I(PK), PEAK CURRENT (A)
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
1000
CURRENT AS FOLLOWS:
175 - TC
I = I25
150
100
SINGLE PULSE
50
-5
10
-4
10
-3
10
-2
10
t, PULSE WIDTH (s)
-1
10
0
10
1
10
Figure 4. Peak Current Capability
FDB8860 Rev A1
4
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FDB8860 N-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
1000
500
IAS, AVALANCHE CURRENT (A)
ID, DRAIN CURRENT(A)
10us
100
100
100us
10
CURRENT LIMITED
BY PACKAGE
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY RDS(ON)
0.1
1
1ms
10ms
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
100ms
DC
10
VDS, DRAIN TO SOURCE VOLTAGE(V)
120
TJ = 175oC
80
TJ = 25oC
TJ = -55oC
40
1.5
2.0
2.5
3.0
VGS, GATE TO SOURCE VOLTAGE (V)
60
40
20
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
RDS(ON), DRAIN TO SOURCE
ON-RESISTANCE (mΩ)
2.5
TJ = 25oC
5
6
7
8
9
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Drain to Source On-Resistance
Variation vs Gate to Source Voltage
FDB8860 Rev A1
0.2
0.4
0.6
0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.0
Figure 8. Saturation Characteristics
TJ = 175oC
4
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
0.0
3.0
1.5
3
VGS = 10V
80
3.5
PULSE DURATION = 80μs
DUTY CYCLE=0.5% MAX
2.0
VGS = 3V
VGS = 5V
0
4.0
3.5
10000
VGS = 4V
100
Figure 7. Transfer Characteristics
ID = 40A
1
10
100
1000
tAV, TIME IN AVALANCHE (ms)
Figure 6. Unclamped Inductive Switching
Capability
VDD = 5V
1.0
STARTING TJ = 150oC
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
120
10
1
0.1
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
160
STARTING TJ = 25oC
60
Figure 5. Forward Bias Safe Operating Area
0
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠ 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1.6
1.4
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE( OC)
200
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
5
www.fairchildsemi.com
FDB8860 N-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
1.10
VGS = VDS
ID = 250μA
1.2
NORMALIZED GATE
THRESHOLD VOLTAGE
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.4
1.05
1.0
1.00
0.8
0.6
0.95
0.4
0.2
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE( oC)
0.90
-80
200
VGS, GATE TO SOURCE VOLTAGE(V)
Ciss
10000
Coss
500
0.1
f = 1MHz
VGS = 0V
Crss
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
40
80
120
160
200
10
VDD = 15V
8
6
4
2
ID = 80A
ID = 1A
0
0
20
40
60
80
100 120 140 160 180
Qg, GATE CHARGE (nC)
Figure 13. Capacitance vs Drain to Source
Voltage
FDB8860 Rev A1
0
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
20000
1000
-40
TJ, JUNCTION TEMPERATURE( oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
CAPACITANCE (pF)
ID = 1mA
Figure 14. Gate Charge vs Gate to Source Voltage
6
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FDB8860 N-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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Rev. I34
FDB8860 Rev A1
7
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FDB8860 N-Channel Logic Level PowerTrench® MOSFET
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