FDC6020C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. • Q1 –4.2 A, –20V. RDS(ON) = 55 mΩ @ VGS = – 4.5 V • Q2 These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • Low gate charge RDS(ON) = 82 mΩ @ VGS = – 2.5 V RDS(ON) = 27 mΩ @ VGS = 4.5 V RDS(ON) = 39 mΩ @ VGS = 2.5 V • High performance trench technology for extremely low RDS(ON). Applications • • • 5.9 A, 20V. • DC/DC converter Load switch Motor Driving FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size Bottom Drain Contact Q2 (N) 4 3 5 2 1 6 Q1 (P) Bottom Drain Contact Absolute Maximum Ratings Symbol Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage ID Drain Current PD TA = 25°C unless otherwise noted Q1 Units –20 20 ±12 –4.2 –20 ±12 5.9 20 V V - Continuous - Pulsed Power Dissipation for Dual Operation (Note 1a) (Note 1a) 1.6 Power Dissipation for single Operation (Note 1a) 1.8 (Note 1b) TJ, TSTG Q2 Operating and Storage Junction Temperature Range A W 1.2 –55 to +150 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 68 RθJC Thermal Resistance, Junction-to-Case (Note 1a) 1 Package Marking and Ordering Information Device Marking .020 2003 Fairchild Semiconductor Corporation Device FDC6020C Reel Size Tape width Quantity 7’’ 8mm 3000 units FDC6020C Rev B(W) FDC6020C November 2003 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage On Characteristics Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 –20 20 VDS = VGS, ID = –250 µA ID = 250 µA VDS = VGS, ID = –250 µA, Referenced to 25°C ID = 250 µA, Referenced to 25°C VGS = –4.5 V, ID = –4.2 A ID = –3.4 A VGS = –2.5 V, VGS = –4.5 V, ID = –4.2 A,TJ =125°C VGS = 4.5 V, ID = 5.9 A ID = 4.9 A VGS = 2.5 V, VGS = 4.5 V, ID = 5.9 A, TJ = 125°C VDS = –5 V, ID = – 4.2 A ID = 5.9 A VDS = 5 V, Q1 Q2 Q1 Q2 Q1 –0.6 0.6 V –14 12 mV/°C –1 1 +100 +100 µA –1.5 1.5 V nA (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance gFS VGS = 0 V, ID = –250 µA ID = 250 µA VGS = 0 V, ID = –250 µA, Referenced to 25°C ID = 250 µA, Referenced to 25°C VDS = –16 V, VGS = 0 V VGS = 0 V VDS = 16 V, VGS = +12 V, VDS = 0 V VDS = 0 V VGS = +12 V, Forward Transconductance Q1 Q2 –1.0 1.0 3 –3 45 65 58 23 33 31 13 23 Q1 Q2 Q1 Q2 Q1 Q2 Q1 753 677 163 171 83 91 8 Q2 2.2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 13 11 8 16 26 18 14 7 7 6 1.6 1.5 1.9 1.8 Q2 mV/°C 55 82 73 27 39 39 mΩ S Dynamic Characteristics Ciss Coss Crss RG Q1: VDS = –10 V, VGS = 0 V, f = 1.0 MHz Output Capacitance Q2: Reverse Transfer Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz Input Capacitance Gate Resistance VGS = 15mV, f = 1.0 MHz pF pF pF Ω Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Q1: VDD = –10 V, VGS = –4.5 V, Q2: VDD = 10 V, VGS = 4.5V, ID = –1 A, RGEN = 6 Ω ID = 1 A, RGEN = 6 Ω Q1: VDS = –10 V,ID = –4.2 A,VGS= –4.5V Q2: VDS = 10 V, ID = 5.9 A,VGS = 4.5 V 23 20 16 29 42 32 52 14 10 8 ns ns ns ns nC nC nC FDC6020C RevB (W) FDC6020C Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge trr Qrr VGS = 0 V, IS = –1.3 A (Note 2) VGS = 0 V, IS = 1.3 A (Note 2) IF = – 4.2A,dIF/dt = 100 A/µs IF = 5.9A, dIF/dt = 100 A/µs IF = – 4.2A,dIF/dt = 100 A/µs IF = 5.9A, dIF/dt = 100 A/µs Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 –0.8 0.7 17 15 6 4 –1.3 1.3 –1.2 1.2 A V nS nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 68°C/W when mounted on a 1in2 pad of 2 oz copper (Single Operation). b) 102°C/W when mounted on a minimum pad of 2 oz copper (Single Operation). Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDC6020C RevB (W) FDC6020C Electrical Characteristics (continued) FDC6020C Typical Characteristics : Q1 20 -3.0V -3.5V -ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.8 VGS = -4.5V 16 -2.5V 12 8 -2.0V 4 2.6 VGS= -2.0V 2.4 2.2 2 1.8 -2.5V 1.6 1.4 -3.0V -4.5V 1 0.8 0 0 1 2 3 4 0 4 8 -VDS, DRAIN TO SOURCE VOLTAGE (V) 16 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.3 0.16 ID = -4.2A VGS = -4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 12 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. 1.2 1.1 1 0.9 ID = -2.1A 0.14 0.12 0.1 TA = 125oC 0.08 TA = 25oC 0.06 0.04 0.8 -50 -25 0 25 50 75 100 125 1.5 150 2 2.5 3 3.5 4 4.5 5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = -5V o o TA = -55 C 16 -IS, REVERSE DRAIN CURRENT (A) 20 -ID, DRAIN CURRENT (A) -3.5V 1.2 25 C 12 125oC 8 4 0 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3.5 VGS = 0V 10 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6020C RevB (W) FDC6020C Typical Characteristics : Q1 1100 ID = -4.2A VDS = -5V f = 1 MHz VGS = 0 V 1000 -10V 900 4 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 -15V 3 2 1 CISS 800 700 600 500 400 COSS 300 200 100 CRSS 0 0 0 1 2 3 4 5 6 7 8 0 9 4 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 12 16 20 Figure 8. Capacitance Characteristics. 10 RDS(ON) LIMIT 10 P(pk), PEAK TRANSIENT POWER (W) 100 -ID, DRAIN CURRENT (A) 8 -VDS, DRAIN TO SOURCE VOLTAGE (V) 10µs 100µs 1ms 10ms 100ms 1 1s DC VGS = -4.5V SINGLE PULSE RθJA = 102oC/W 0.1 o TA = 25 C 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. 100 SINGLE PULSE RθJA = 102°C/W TA = 25°C 8 6 4 2 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 10. Single Pulse Maximum Power Dissipation. FDC6020C RevB (W) FDC6020C Typical Characteristics : Q2 2.8 20 3.0V 2.5V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V ID, DRAIN CURRENT (A) 16 12 2.0V 8 4 0 2.6 2.4 VGS = 2.0V 2.2 2 1.8 1.6 2.5V 1.4 3.0V 1.2 4.5V 0.8 0 0.5 1 1.5 2 0 4 8 12 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. On-Region Characteristics. 20 0.08 ID = 2.9A ID = 5.9A VGS = 4.5V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 16 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.2 1 0.8 0.07 0.06 0.05 TA = 125oC 0.04 0.03 TA = 25oC 0.6 0.02 -50 -25 0 25 50 75 100 125 150 1.5 2 2.5 o 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 13. On-Resistance Variation with Temperature. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 20 100 o o TA =-55 C 16 25 C 125oC 12 8 4 0 1 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 15. Transfer Characteristics. 2.5 IS, REVERSE DRAIN CURRENT (A) VGS = 0V VDS = 5V ID, DRAIN CURRENT (A) 3.5V 1 10 TA = 125oC 1 25oC 0.1 0.01 -55oC 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6020C RevB (W) FDC6020C Typical Characteristics : Q2 1000 VDS = 5V ID = 5.9A 900 15V 3 2 700 600 500 400 COSS 300 200 1 100 CRSS 0 0 0 1 2 3 4 5 6 7 0 8 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) 10 RDS(ON) LIMIT 10µs 10 100µs 1ms 10ms 100ms 1s 1 DC VGS = 4.5V SINGLE PULSE RθJA = 102oC/W 0.1 o TA = 25 C 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 102°C/W TA = 25°C 8 6 4 2 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 19. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V CISS 800 10V 4 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 20. Single Pulse Maximum Power Dissipation. 1 RθJA(t) = r(t) * RθJA RθJA = 102 °C/W D = 0.5 0.2 P(pk) 0.1 0.1 t1 0.05 t2 0.02 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC6020C RevB (W) FDC6020C Dimensional Outline and Pad Layout Bottom View Recommended Landing Pattern For Standard Dual Configuration Top View FDC6020C RevB (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I5