FDC606P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –6 A, –12 V. Applications • Fast switching speed • Battery management • High performance trench technology for extremely low RDS(ON) • Load switch RDS(ON) = 26 mΩ @ VGS = –4.5 V RDS(ON) = 35 mΩ @ VGS = –2.5 V RDS(ON) = 53 mΩ @ VGS = –1.8 V • Battery protection D D S SuperSOT TM-6 D D 6 2 5 3 4 G Absolute Maximum Ratings Symbol 1 TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage –12 V VGSS Gate-Source Voltage ±8 V ID Drain Current –6 A PD Maximum Power Dissipation – Continuous (Note 1a) – Pulsed TJ, TSTG –20 (Note 1a) 1.6 (Note 1b) 0.8 Operating and Storage Junction Temperature Range W –55 to +150 °C (Note 1a) 78 °C/W (Note 1) 30 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .606 FDC606P 7’’ 8mm 3000 units 2001 Fairchild Semiconductor Corporation FDC606P Rev E (W) FDC606P December 2001 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min ID = –250 µA –12 Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = –250 µA,Referenced to 25°C VDS = –10 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA ID = –250 µA On Characteristics V –3 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA,Referenced to 25°C 2.5 21 26 34 28 –0.4 –0.5 –1.5 V mV/°C ID(on) On–State Drain Current VGS = –4.5 V, ID = –6 A VGS = –2.5 V, ID = –5 A VGS = –1.8 V, ID = –4 A VGS = –4.5 V, ID = –6 A,TJ=125°C VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –6 A 25 VDS = –6 V, f = 1.0 MHz V GS = 0 V, 1699 pF 679 pF 423 pF 26 35 53 35 –20 mΩ A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) (Note 2) 11 19 ns 10 20 ns Turn–Off Delay Time 89 142 ns tf Turn–Off Fall Time 70 112 ns Qg Total Gate Charge 18 25 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = –6 V, VGS = –4.5 V, VDS = –6 V, VGS = –4.5 V ID = –1 A, RGEN = 6 Ω ID = –6 A, 3 nC 4.2 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.3 A (Note 2) –0.6 –1.3 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 2 78°C/W when mounted on a 1in pad of 2oz copper on FR-4 board. b. 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDC606P Rev E (W) FDC606P Electrical Characteristics FDC606P Typical Characteristics 2.6 -2.5V VGS = -4.5V -1.8V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 -ID, DRAIN CURRENT (A) -3.0V 15 10 -1.5V 5 2.4 VGS=-1.5V 2.2 2 1.8 -1.8V 1.6 -2.0V 1.4 -2.5V 1.2 -3.0V 1 -4.5V 0.8 0 0 0.5 1 1.5 2 2.5 0 3 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 20 0.08 ID = -6A VGS = -4.5V ID = -3A 1.2 1.1 1 0.9 0.8 0.07 0.06 0.05 TA = 125oC 0.04 0.03 TA = 25oC 0.02 0.01 -50 -25 0 25 50 75 100 125 150 1 2 o TJ, JUNCTION TEMPERATURE ( C) -IS, REVERSE DRAIN CURRENT (A) 125 C 15 10 5 0 0.75 1 1.25 1.5 5 100 25oC TA = -55oC o 0.5 4 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 VDS = -5V 3 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. -ID, DRAIN CURRENT (A) 15 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 10 -ID, DRAIN CURRENT (A) 1.75 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC606P Rev E (W) FDC606P Typical Characteristics 2500 VDS = -4V ID = -6A f = 1 MHz VGS = 0 V -6V 4 CISS 2000 -8V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 1 1500 COSS 1000 CRSS 500 0 0 5 10 15 20 0 25 0 3 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 12 P(pk), PEAK TRANSIENT POWER (W) 10 RDS(ON) LIMIT -ID, DRAIN CURRENT (A) 9 Figure 8. Capacitance Characteristics. 100 100µs 10 1ms 10ms 100ms 1s 1 DC VGS = -4.5V SINGLE PULSE RθJA = 156oC/W 0.1 TA = 25oC 0.01 0.1 1 10 SINGLE PULSE RθJA = 156°C/W TA = 25°C 8 6 4 2 0 0.01 100 0.1 -VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 6 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 RθJA = 156 C/W 0.1 o 0.1 P(pk) 0.05 t1 0.02 0.01 0.001 0.00001 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC606P Rev E (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4