FDC6310P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. • –2.2 A, –20 V. RDS(ON) = 125 mΩ @ V GS = –4.5 V RDS(ON) = 190 mΩ @ V GS = –2.5 V These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(ON) Applications • SuperSOT TM -6 package: small footprint 72% smaller than standard SO-8); low profile (1mm thick) • Load switch • Battery protection • Power management D2 S1 D1 G2 SuperSOT TM -6 S2 3 5 2 6 1 G1 Absolute Maximum Ratings Symbol 4 TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage Parameter –20 V V GSS Gate-Source Voltage ±12 V ID Drain Current –2.2 A – Continuous (Note 1a) – Pulsed PD –6 Power Dissipation for Single Operation (Note 1a) 0.96 (Note 1b) 0.9 (Note 1c) TJ , TSTG W 0.7 –55 to +150 °C (Note 1a) 130 °C/W (Note 1) 60 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJ C Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .310 FDC6310P 7’’ 8mm 3000 units 2001 Fairchild Semiconductor Corporation FDC6310P Rev C(W) FDC6310P April 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BV DSS ∆BV DSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V GS = 0 V, ID = –250 µA V DS = –16 V, V GS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward V GS = 12 V, V DS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse V GS = –12 V, V DS = 0 V –100 nA –1.5 V On Characteristics –20 ID = –250 µA, Referenced to 25°C V –11 mV/°C (Note 2) V GS(th) ∆V GS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance V DS = V GS , ID = –250 µA ID = –250 µA, Referenced to 25°C ID(on) On–State Drain Current V GS = –4.5 V, V DS = –5 V gFS Forward Transconductance V DS = –5 V, ID = –3.5 A 6 S V DS = –10 V, f = 1.0 MHz V GS = 0 V, 337 pF 88 pF 51 pF –0.6 –1.0 3 V GS = –4.5 V, ID = –2.2 A V GS = –2.5 V, ID = –1.8 A V GS =–4.5 V, ID =–2.2 A, TJ =125°C 100 145 137 mV/°C 125 190 184 –6 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) V DD = –10 V, V GS = –4.5 V, 9 18 ns 12 22 ns Turn–Off Delay Time 10 20 ns Turn–Off Fall Time 5 10 ns 3.7 5.2 nC V DS = –10 V, V GS = –4.5 V ID = –1 A, RGEN = 6 Ω ID = –2.2 A, 0.65 nC 1.3 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current V SD Drain–Source Diode Forward Voltage V GS = 0 V, IS = –0.8 A (Note 2) 0.77 –0.8 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 130 °C/W when mounted on a 0.125 in2 pad of 2 oz. copper. b) 140°/W when mounted on a .004 in2 pad of 2 oz copper c) 180°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDC6310P Rev C(W) FDC6310P Electrical Characteristics FDC6310P Typical Characteristics 2.75 6 V GS =- 4.5V -I D, DRAIN CURRENT (A) 5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V -2.5V -3.5V 4 3 -2.0V 2 -1.8V 1 2.5 V GS = -2.0V 2.25 2 1.75 -2.5V 1.5 -3.0V 1.25 -3.5V -4.5V 1 0.75 0 0 0.5 1 1.5 2 0 2.5 1 2 Figure 1. On-Region Characteristics. 5 6 0.4 ID = -2.2 A ID = -2.2A VGS = -4.5V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.2 1 0.8 0.35 0.3 0.25 0.2 TA = 125o C 0.15 0.1 T A = 25o C 0.6 -50 -25 0 25 50 75 100 125 0.05 150 1 2 T J, JUNCTION TEMPERATURE ( oC) 3 4 5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 5 V GS = 0V 25oC TA = -55o C 4 -IS, REVERSE DRAIN CURRENT (A) V DS = -5V -ID, DRAIN CURRENT (A) 3 -ID , DRAIN CURRENT (A) -V DS , DRAIN-SOURCE VOLTAGE (V) 125o C 3 2 1 10 T A = 125o C 1 25oC 0.1 -55o C 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 -V GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6310P Rev C(W) FDC6310P Typical Characteristics 600 V DS =- 5V ID = -2.2A f = 1MHz V GS = 0 V -10V 500 4 -15V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 5 3 2 400 C ISS 300 200 COSS 1 100 CRSS 0 0 0 1 2 3 4 5 0 5 Q g, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 5 10 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 15 Figure 8. Capacitance Characteristics. 100 10ms 100ms 1 1s 10s DC V GS = -4.5V SINGLE PULSE RθJA = 180o C/W 0.1 TA = 25o C 0.01 0.1 1 10 SINGLE PULSE Rθ JA = 180°C/W T A = 25°C 4 3 2 1 0 0.01 100 0.1 -V DS , DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t1 , TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 -V DS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 180°C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. FDC6310P Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H2