Fairchild FDC8886 N-channel power trenchâ® mosfet 30 v, 6.5 a, 23 mî© Datasheet

FDC8886
N-Channel Power Trench® MOSFET
30 V, 6.5 A, 23 mΩ
Features
General Description
„ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 6.5 A
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been optimized for rDS(on) switching performance.
„ Max rDS(on) = 36 mΩ at VGS = 4.5 V, ID = 6.0 A
„ High performance trench technology for extremely low rDS(on)
„ Fast switching speed
Application
„ RoHS Compliant
„ Primary Switch
S
D
S
4
3
G
D
5
2
D
D
6
1
D
D
G
D
Pin 1
D
SuperSOTTM
-6
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
(Note 3)
Drain Current -Continuous (Package limited) TC = 25 °C
ID
TA = 25 °C
-Continuous
TJ, TSTG
Units
V
±20
V
8.0
(Note 1a)
-Pulsed
PD
Ratings
30
6.5
A
25
Power Dissipation
(Note 1a)
1.6
Power Dissipation
(Note 1b)
0.8
Operating and Storage Junction Temperature Range
-55 to +150
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
30
(Note 1a)
78
°C/W
Package Marking and Ordering Information
Device Marking
.886
Device
FDC8886
©2012 Fairchild Semiconductor Corporation
FDC8886 Rev.C3
Package
SSOT-6
Reel Size
7 ’’
1
Tape Width
8 mm
Quantity
3000 units
www.fairchildsemi.com
FDC8886 N-Channel Power Trench® MOSFET
January 2012
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
IGSS
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
30
V
18
mV/°C
1
μA
100
nA
3.0
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 6.5 A
19
23
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 6.0 A
30
36
VGS = 10 V, ID = 6.5 A, TJ = 125 °C
25
30
VDD = 5 V, ID = 6.5 A
24
gFS
Forward Transconductance
1.2
1.9
-6
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
348
465
135
180
pF
pF
16
25
pF
Ω
1.2
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
VDD = 15 V, ID = 6.5 A,
VGS = 10 V, RGEN = 6 Ω
5
10
ns
1
10
ns
11
19
ns
1
10
ns
nC
Total Gate Charge
VGS = 0 V to 10 V
5.3
7.4
Total Gate Charge
VGS = 0 V to 4.5 V VDD = 15 V
ID = 6.5 A
2.5
3.5
Qgs
Total Gate Charge
Qgd
Gate to Drain “Miller” Charge
nC
1.0
nC
0.8
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 6.5 A
(Note 2)
IF = 6.5 A, di/dt = 100 A/μs
0.86
1.2
V
14
22
ns
3
10
nC
NOTES:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
a. 78 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.175 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
©2012 Fairchild Semiconductor Corporation
FDC8886 Rev.C3
2
www.fairchildsemi.com
FDC8886 N-Channel Power Trench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
3.5
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
25
VGS = 6 V
VGS = 4.5 V
20
VGS = 4 V
15
10
VGS = 3.5 V
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
0.4
0.8
1.2
1.6
2.0
VGS = 3.5 V
3.0
VGS = 4 V
2.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2.0
VGS = 4.5 V
1.5
VGS = 6 V
1.0
0.5
VGS = 10 V
0
5
Figure 1. On Region Characteristics
rDS(on), DRAIN TO
1.2
1.1
1.0
0.9
0.8
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.3
-50
25
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
60
40
TJ = 125 oC
20
TJ = 25 oC
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
30
25
20
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
ID = 6.5 A
0
100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VDS = 5 V
15
TJ = 150 oC
10
TJ = 25 oC
5
TJ = -55 oC
0
20
80
ID = 6.5 A
VGS = 10 V
0.7
-75
15
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.5
1.4
10
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
1
2
3
4
TJ = 150 oC
1
TJ = 25 oC
TJ = -55 oC
0.1
0.01
0.2
5
VGS, GATE TO SOURCE VOLTAGE (V)
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2012 Fairchild Semiconductor Corporation
FDC8886 Rev.C3
VGS = 0 V
10
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDC8886 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
500
ID = 6.5 A
VDD = 10 V
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 15 V
6
VDD = 20 V
4
100
Coss
2
0
f = 1 MHz
VGS = 0 V
0
1
2
3
4
5
6
1
Figure 7. Gate Charge Characteristics
30
Figure 8. Capacitance vs Drain
to Source Voltage
8
7
6
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
TJ = 25 oC
5
TJ = 100 oC
4
3
TJ = 125 oC
2
6
VGS = 10 V
4
VGS = 4.5 V
2
o
RθJA = 78 C/W
1
0.01
0.1
1
0
25
5
50
125
150
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
30
P(PK), PEAK TRANSIENT POWER (W)
200
10
100 μs
1
THIS AREA IS
LIMITED BY rDS(on)
1 ms
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
10 s
DC
RθJA = 175 oC/W
TA = 25 oC
0.01
0.01
100
o
Figure 9. Unclamped Inductive
Switching Capability
0.1
75
TA, AMBIENT TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
ID, DRAIN CURRENT (A)
Crss
10
0.1
0.1
1
10
100200
TA = 25 oC
10
1
0.5 -4
10
-3
10
-2
10
-1
10
1
10
100
3
10
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDC8886 Rev.C3
SINGLE PULSE
RθJA = 175 oC/W
100
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDC8886 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 175 C/W
0.01
0.005
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDC8886 Rev.C3
5
www.fairchildsemi.com
FDC8886 N-Channel Power Trench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDC8886 N-Channel Power Trench® MOSFET
Dimensional Outline and Pad Layout
©2012 Fairchild Semiconductor Corporation
FDC8886 Rev.C3
6
www.fairchildsemi.com
tm
tm
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Advance Information
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
©2012 Fairchild Semiconductor Corporation
FDC8886 Rev.C3
7
www.fairchildsemi.com
FDC8886 N-Channel Power Trench® MOSFET
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