FDD6676AS 30V N-Channel PowerTrench® SyncFET™ General Description Features The FDD6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low and low gate charge. The FDD6676AS RDS(ON) includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild’s monolithic SyncFET technology. • 90 A, 30 V RDS(ON) = 5.7 mΩ @ VGS = 10 V RDS(ON) = 7.1 mΩ @ VGS = 4.5 V • Includes SyncFET schottky body diode • Low gate charge (46nC typical) • High performance trench technology for extremely Applications low RDS(ON) • DC/DC converter • High power and current handling capability • Low side notebook D D G S G D-PAK TO-252 (TO-252) Absolute Maximum Ratings Symbol S TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current A – Continuous – Pulsed PD (Note 3) 90 (Note 1a) 100 (Note 1) 70 (Note 1a) 3.1 Power Dissipation for Single Operation (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range W 1.3 –55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 1.8 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD6676AS FDD6676AS 13’’ 12mm 2500 units FDD6676AS FDD6676AS_NL (Note 4) 13’’ 12mm 2500 units ©2005 Fairchild Semiconductor Corporation FDD6676AS Rev A(X) FDD6676AS April 2005 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD = 15 V, ID = 16A 108 250 mJ 16 A Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = 1 mA 30 ID = 10 mA, Referenced to 25°C Gate–Body Leakage VDS = 24 V, VGS = 0 V On Characteristics VGS(th) VGS = ±20 V, 500 11 VDS = 0 V µA mA ±100 nA (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = 1 mA RDS(on) Static Drain–Source On–Resistance gFS Forward Transconductance VGS = 10 V, ID = 16 A VGS = 4.5 V, ID = 15 A VGS = 10 V, ID = 16 A,TJ=125°C VDS = 5 V, ID = 16 A ∆VGS(th) ∆TJ mV/°C 31 VDS = 24 V, VGS = 0 V, TJ=125°C IGSS V ID = 10 mA, Referenced to 25°C 1 1.5 3 V mV/°C –3.6 4.7 5.8 6.7 5.7 7.1 8.4 mΩ 61 S 2500 pF 710 pF 270 pF 1.6 Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) VDS = 15 V, f = 1.0 MHz V GS = 0 V, V GS = 0 V, f = 1.0 MHz (Note 2) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 12 21 ns 12 22 ns 46 74 ns 28 44 ns td(on) Turn–On Delay Time 20 32 ns tr Turn–On Rise Time 24 38 ns td(off) Turn–Off Delay Time tf Turn–Off Fall Time VDD = 15 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω 35 56 ns 27 43 ns Qg(TOT) Total Gate Charge, Vgs = 10V 46 64 nC Qg Total Gate Charge, Vgs = 5V 25 35 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, ID = 16 A 7 nC 9 nC FDD6676AS Rev A(X) FDD6676AS Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current VSD VGS = 0 V, tRR Drain–Source Diode Forward Voltage Diode Reverse Recovery Time IRM Maximum Recovery Current dIF/dt = 300A/us, IF = 16A QRR Diode Reverse Recovery Charge IS = 3.5 A (Note 2) 0.4 3.5 A 0.7 V 25 ns 1.9 A 24 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A 4. FDD6676AS_NL is a lead free product. The FDD6676AS_NL marking will appear on the reel label. FDD6676AS Rev A(X) FDD6676AS Electrical Characteristics (continued) FDD6676AS Typical Characteristics 100 6.0V 2.4 4.0V 4.5V VGS = 3.0V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V ID, DRAIN CURRENT (A) 80 60 40 3.0V 20 2.2 2 1.8 1.6 3.5V 1.4 4.0V 4.5V 1.2 5.0V 6.0V 10V 1 2.5V 0 0.8 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 0 Figure 1. On-Region Characteristics 80 100 0.02 ID = 78A VGS =10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 40 60 ID, DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.6 1.4 1.2 1 0.8 0.6 ID = 39A 0.016 0.012 o TA = 125 C 0.008 o TA =25 C 0.004 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 Figure 3. On-Resistance Variation with Temperature 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 100 VDS = 5V VGS = 0V IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 20 80 60 40 TA = 125oC o 25 C 20 -55oC 0 10 o TA = 125 C 1 25oC -55oC 0.1 0.01 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 4 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 1 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6676AS Rev A(X) FDD6676AS Typical Characteristics 4000 ID = 78A f = 1MHz VGS = 0 V 8 VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 15V 4 3000 Ciss 2000 Coss 1000 2 Crss 0 0 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 0 Figure 7. Gate Charge Characteristics 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics 1000 100 P(pk), PEAK TRANSIENT POWER (W) 50 100us 1ms 10ms 100ms 1s 10s RDS(ON) LIMIT 10 1 DC VGS = 10V SINGLE PULSE o RθJA = 96 C/W 0.1 o TA = 25 C 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 96°C/W TA = 25°C 40 30 20 10 0 0.001 Figure 9. Maximum Safe Operating Area r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 5 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 96°C/W 0.2 0.1 0.1 0.05 P(pk 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6676AS Rev A(X) FDD6676AS Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 IDSS, REVERSE LEAKAGE CURRENT (A) CURRENT : 0.8A/div Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDD6676AS. TA = 125oC 0.01 TA = 100oC 0.001 0.0001 TA = 25oC 0.00001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. TIME : 12.5ns/div Figure 12. FDD6676AS SyncFET body diode reverse recovery characteristic. CURRENT : 0.8A/div For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDD6676A). TIME : 12.5ns/div Figure 13. Non-SyncFET (FDD6676A) body diode reverse recovery characteristic. FDD6676AS Rev A(X) FDD6676AS Typical Characteristics L VDS BVDSS tP VGS RGE + DUT VGS VDS IAS VDD VDD - 0V tp vary tP to obtain required peak IAS IAS 0.01Ω tAV Figure 15. Unclamped Inductive Load Test Circuit Figure 16. Unclamped Inductive Waveforms Drain Current Same type as + 50kΩ 10V - 10µF + 1µF VDD - VGS QG(TOT) 10V DUT QGD QGS VGS Ig(REF Charge, (nC) Figure 17. Gate Charge Test Circuit Figure 18. Gate Charge Waveform tON VDS VGS RGEN td(ON) RL VDS tr 90% tOFF td(OFF tf ) 90% + VDD DUT VGSPulse Width ≤ 1µs Duty Cycle ≤ 0.1% Figure 19. Switching Time Test Circuit - 10% 0V 90% VGS 0V 10% 50% 10% 50% Pulse Width Figure 20. Switching Time Waveforms FDD6676AS Rev. 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A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15