Fairchild FDD6680A N-channel, logic level, powertrench mosfet Datasheet

FDD6680A
N-Channel, Logic Level, PowerTrench MOSFET
General Description
Features
This N-Channel Logic level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
•
RDS(ON) = 0.0130 Ω @ VGS = 4.5 V.
Applications
•
•
56 A, 30 V. RDS(ON) = 0.0095 Ω @ VGS = 10 V
•
Low gate charge ( 23nC typical ).
•
Fast switching speed.
•
High performance trench technology for extremely
low RDS(ON).
DC/DC converter
Motor drives
D
D
G
G
S
TO-252
Absolute Maximum Ratings
Symbol
S
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Maximum Drain Current - Continuous
(Note 1)
56
A
(Note 1a)
14
Maximum Drain Current - Pulsed
100
Maximum Power Dissipation @ T C = 25oC
PD
T A = 25oC
T A = 25oC
T J, T stg
(Note 1)
60
(Note 1a)
2.8
(Note 1b)
W
1.3
-55 to +150
°C
(Note 1)
2.1
°C/W
(Note 1b)
96
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDD6680A
FDD6680A
13’’
16mm
2500
2000 Fairchild Semiconductor Corporation
FDD6680A, Rev. C
FDD6680A
February 2000
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
200
mJ
56
A
Drain-Source Avalanche Ratings (Note 1)
W DSS
IAR
Single Pulse Drain-Source
VDD = 15 V, ID = 56 A
Avalanche Energy
Maximum Drain-Source Avalanche Current
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID =250µA,Referenced to 25°C
VDS = 24 V, VGS = 0 V
1
µA
IGSSF
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
VGS = 20 V, VDS = 0 V
100
nA
VGS = -20 V, VDS = 0 V
-100
nA
IGSSR
On Characteristics
30
V
23
mV/°C
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID =250µA,Referenced to 25°C
-4
0.008
0.012
0.010
ID(on)
On-State Drain Current
VGS = 10 V, ID = 14 A
VGS = 10 V,ID =14 A,TJ=125°C
VGS = 4.5 V, ID = 12 A
VGS = 5 V, VDS = 5 V
gFS
Forward Transconductance
VDS = 10 V, ID = 14 A
41
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
2180
pF
500
pF
255
pF
1
1.5
3
V
mV/°C
0.0095
0.0160
0.0130
50
Ω
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
VDS = 15 V, ID = 14 A,
VGS = 5 V,
13
24
14
26
ns
ns
43
70
ns
15
27
ns
23
33
nC
7
nC
11
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = 2.3 A
(Note 2)
0.72
2.3
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the drain tab.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA= 45oC/W when mounted
b) RθJA= 96oC/W on a minimum
on a 1in2 pad of 2oz copper.
mounting pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDD6680A, Rev. C
FDD6680A
Electrical Characteristics
FDD6680A
Typical Characteristics
2.2
4.5V
3.5V
40
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN-SOURCE CURRENT (A)
50
3.0V
30
20
2.5V
10
0
0
1
2
2
VGS = 3.0V
1.8
1.6
3.5V
1.4
4.0V
4.5V
1.2
6.0V
1
10V
0.8
3
0
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
40
0.03
ID = 7 A
ID = 14A
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.8
0.6
0.025
0.02
o
0.015
TA = 125 C
0.01
o
TA = 25 C
0.005
0
-50
-25
0
25
50
75
100
125
150
2
4
o
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VDS = 5V
o
IS, REVERSE DRAIN CURRENT (A)
50
ID, DRAIN CURRENT (A)
20
ID, DRAIN CURRENT (A)
o
TA = -55 C
25 C
o
125 C
40
30
20
10
0
VGS = 0V
10
o
TA = 125 C
1
o
25 C
0.1
o
-55 C
0.01
0.001
0.0001
1
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDD6680A, Rev. C
(continued)
10
VGS, GATE-SOURCE VOLTAGE (V)
FDD6680A
Typical Characteristics
3500
VDS = 5V
ID = 14A
10V
f = 1MHz
VGS = 0 V
3000
15V
CAPACITANCE (pF)
8
6
4
2500
CISS
2000
1500
1000
2
500
0
COSS
CRSS
0
0
10
20
30
40
50
0
5
Qg, GATE CHARGE (nC)
20
25
30
200
P(pk), PEAK TRANSIENT POWER (W)
1000
RDS(ON) LIMIT
100
100µs
1ms
10ms
100ms
10
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
o
RθJA = 96 C/W
0.1
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 96 °C/W
TA = 25°C
150
100
50
0
0.001
0.01
0.1
1
10
100
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
15
Figure 8. Capacitance Characteristics.
Figure 7. Gate-Charge Characteristics.
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
0.1
RθJA = 96 °C/W
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
FDD6680A, Rev. C
TO-252 Tape and Reel Data and Package Dimensions
D-PAK (TO-252) Packaging
Configuration: Figure 1.0
Packaging Description:
TO-252 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further
described in the Packaging Information table.
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
FZ9935
FDD
6680
FZ9935
FDD
6680
FZ9935
FDD
6680
FZ9935
FDD
6680
D-PAK (TO-252) Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Standard
(no flow code)
TNR
D-PAK (TO-252) Unit Orientation
2,500
13" Dia
Reel Size
Box Dimension (mm)
359x359x57
Max qty per Box
5,000
Weight per unit (gm)
0.300
Weight per Reel(kg)
1.200
359mm x 359mm x 57mm
Standard Intermediate box
ESD Label
Note/Comments
F63TNR Label sample
F63TNR Label
LOT: CBVK741B019
QTY: 2500
FSID: FDD6680
SPEC:
D/C1: Z9942
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
TO-252 (D-PAK) Tape Leader and
Trailer Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
640mm minimum or
80 empty pockets
Leader Tape
1680mm minimum or
210 empty pockets
July 1999, Rev. A
TO-252 Tape and Reel Data and Package Dimensions
D-PAK (TO-252) Embossed Carrier
Tape Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
TO252
(24mm)
A0
B0
6.90
+/-0.10
10.50
+/-0.10
W
16.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.5
+/-0.10
1.75
+/-0.10
F
14.25
min
7.50
+/-0.10
P1
P0
8.0
+/-0.1
4.0
+/-0.1
K0
2.65
+/-0.10
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
T
Wc
0.30
+/-0.05
0.06
+/-0.02
0.9mm
maximum
10 deg maximum
Typical
component
cavity
center line
B0
13.0
+/-0.3
Tc
0.9mm
maximum
10 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
D-PAK (TO-252) Reel
Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
B Min
Dim C
Dim A
max
Dim D
min
Dim N
DETAIL AA
See detail AA
W3
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Tape Size
164mm
Reel
Option
13" Dia
Dim A
Dim B
13.00
330
0.059
1.5
Dim C
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
Dim N
4.00
100
Dim W1
0.646 +0.078/-0.000
16.4 +2/0
Dim W2
0.882
22.4
Dim W3 (LSL-USL)
0.626 – 0.764
15.9 – 19.4
July 1999, Rev. A
TO-252 Tape and Reel Data and Package Dimensions
TO-252 (FS PKG Code AA)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.300
September 1999, Rev. A
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not intended to be an exhaustive list of all such trademarks.
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench 
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
SyncFET™
TinyLogic™
UHC™
VCX™
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failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
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