tm FDD8445 N-Channel PowerTrench® MOSFET 40V, 50A, 8.7mΩ Features Applications RDS(ON) = 6.7 mΩ (Typ), VGS = 10V, ID=50A Automotive Engine Control Qg(10) = 45nC (Typ), VGS=10V Powertrain Management Low Miller Charge Solenoid and Motor Drivers Low Qrr Body Diode Electronic Transmission UIS Capability (Single Pulse/ Repetitive Pulse) Distributed Power Architecture and VRMs Qualified to AEC Q101 Primary Switch for 12V Systems A REE I DF M ENTATIO LE N MP LE RoHS Compliant D G S ©2007 Fairchild Semiconductor Corporation FDD8445 Rev A (W) 1 www.fairchildsemi.com FDD8445 N-Channel PowerTrench® MOSFET March 2007 Symbol VDSS Drain to Source Voltage Parameter Ratings 40 Units V VGS Gate to Source Voltage ±20 V 70 A 15.2 A Drain Current Continuous (VGS=10v) (Note 1) Continuous (VGS=10v,with RθJA = 52oC/W) ID Pulsed EAS PD TJ, TSTG Figure 4 Single Pulse Avalanche Energy (Note 2) 144 Power Dissipation 79 W Derate above 25oC 0.53 W/oC Operating and Storage Temperature mJ o -55 to +175 C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TO-252, lin2 copper pad area 1.9 oC/W 52 oC/W Package Marking and Ordering Information Device Marking FDD8445 Device FDD8445 Package TO-252AA Reel Size 13” Tape Width 12mm Quantity 2500 units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units 40 - - V - - 1 μA Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V IDSS Zero Gate Voltage Drain Current VDS = 32V VGS = 0V - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VDS = VGS, ID = 250μA 2 2.8 4 V ID = 50A, VGS = 10V - 6.7 8.7 ID = 50A, VGS = 10V, TJ = 175°C - 12.5 16.3 - 3040 4050 pF - 295 390 pF - 178 270 pF TJ=150°C On Characteristics VGS(th) RDS(ON) Gate to Source Threshold Voltage Drain to Source On Resistance mΩ Dynamic Characteristics CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance RG Gate Resistance f = 1MHz - 1.7 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V - 45 59 nC Qg(5) Total Gate Charge at 5V VGS = 0 to 5V - 17 22 nC Qg(TH) Threshold Gate Charge VGS = 0 to 2V - 5.8 7.6 nC Qgs Gate to Source Gate Charge - 12.5 - nC Qgs2 Gate Charge Threshold to Plateau - 9.5 - nC Qgd Gate to Drain “Miller” Charge - 10.5 - nC FDD8445 Rev A (W) VDS = 25V, VGS = 0V, f = 1MHz 2 VDD = 20V, ID = 50A www.fairchildsemi.com FDD8445 N-Channel PowerTrench® MOSFET Absolute Maximum Ratings Tc = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) Turn-On Time - - 138 ns td(on) Turn-On Delay Time - 10 - ns tr Turn-On Rise Time - 82 - ns td(off) Turn-Off Delay Time - 26 - ns tf Turn-Off Fall Time - 9.6 - ns toff Turn-Off Time - - 53 ns V VDD = 20V, ID = 50A VGS = 10V, RGS = 2Ω Drain-Source Diode Characteristics ISD=50A - - 1.25 ISD=25A - - 1.0 V Reverse Recovery Time IF= 50A, dIF/dt=100A/μs - - 39 ns Reverse Recovery Charge IF= 50A, dIF/dt=100A/μs - - 38 nC VSD Source to Drain Diode Voltage trr Qrr Notes: 1: Maximum package current capability is 50A. 2: Starting TJ = 25oC, L=0.18mH, IAS=40A. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDD8445 Rev A (W) 3 www.fairchildsemi.com FDD8445 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 80 VGS=10V CURRENT LIMITED BY PACKAGE 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 60 40 20 0.2 0.0 0 25 50 75 100 125 150 0 25 175 o TC , CASE TEMPERATURE( C) Figure 1. Normalized Power Dissipation vs Case Temperature 50 75 100 125 o TC, CASE TEMPERATURE( C) 150 175 Figure 2. Maximum Continuous Drain Current vs Case Temperature 2 DUTY CYCLE - DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJC 1 D = 0.50 0.20 0.10 0.05 0.02 0.01 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 0.01 -5 10 SINGLE PULSE -4 -3 10 -2 -1 0 10 10 10 t, RECTANGULAR PULSE DURATION(s) 1 10 10 Figure 3. Normalized Maximum Transient Thermal Impedance 2000 VGS = 10V IDM, PEAK CURRENT (A) 1000 TC = 25oC TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 175 - TC I = I25 150 100 SINGLE PULSE 10 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 4. Peak Current Capability FDD8445 Rev A (W) 4 www.fairchildsemi.com FDD8445 N-Channel PowerTrench® MOSFET Typical Characteristics 200 1000 IAS, AVALANCHE CURRENT (A) ID, DRAIN CURRENT (A) 100 100us 10 CURRENT LIMITED BY PACKAGE 1 0.1 1 1ms OPERATION IN THIS SINGLE PULSE AREA MAY BE TJ = MAX RATED LIMITED BY rDS(ON) TC = 25oC 10ms DC 10 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 10us O STARTING TJ = 25 C 10 O STARTING TJ = 150 C 1 0.01 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 1000 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Indutive Switching Capability Figure 5. Forward Bias Safe Operating Area 120 100 VDD = 6V ID, DRAIN CURRENT (A) 120 PULSE DURATION=80μs DUTY CYCLE=0.5% MAX 80 ID, DRAIN CURRENT (A) 140 O TJ = 175 C 60 O TJ = 25 C 40 O TJ = - 55 C 20 0 2.0 4.5V 60 40 4.0V 20 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.0 6.0 0.5 1.0 1.5 2.0 2.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 3.0 Figure 8. Saturation Characteristics 20 2.0 PULSE DURATION=80μS DUTY CYCLE=0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE RDS(ON), DRAIN TO SOURCE ON-RESISTANCE (mΩ ) PULSE DURATION =80μS DUTY CYCLE =0.5% MAX 80 Figure 7. Transfer Characteristics ID=12A 16 TJ = 175oC 12 8 4 5.0V VGS=10V 100 TJ = 25oC 3.5 4.5 6.0 7.5 9.0 VGS, GATE TO SOURCE VOLTAGE (V) 10 PULSE DURATION =80μS DUTY CYCLE =0.5% MAX 1.6 1.4 1.2 1.0 ID = 50A VGS = 10V 0.8 0.6 -80 -40 0 40 80 120 160 200 o TJ, JUNCTION TEMPERATURE( C) Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage FDD8445 Rev A (W) 1.8 5 www.fairchildsemi.com FDD8445 N-Channel PowerTrench® MOSFET Typical Characteristics 1.10 1.2 1.1 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS=VDS NORMALIZED GATE THRESHOLD VOLTAGE ID =250μA 1.0 0.9 0.8 0.7 0.6 0.5 -80 -40 0 40 80 120 160 o TJ, JUNCTION TEMPERATURE ( C) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 1000 VGS, GATE TO SOURCE VOLTAGE(V) CAPACITANCE (pF) 1.00 0.95 0.90 -80 -40 0 40 80 120 160 o TJ, JUNCTION TEMPERATURE ( C) 200 10 f = 1MHz VGS = 0V CISS COSS CRSS 40 VDD=15V ID=50A 8 VDD=20V VDD=25V 6 4 2 0 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 13. Capacitance vs Drain to Source Voltage FDD8445 Rev A (W) 1.05 Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature 10000 100 0.1 ID =250μA 0 20 40 Qg , GATE CHARGE (nC) 60 Figure 14. Gate Charge vs Gate to Source Voltage 6 www.fairchildsemi.com FDD8445 N-Channel PowerTrench® MOSFET Typical Characteristics TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I24 FDD8445 Rev A (W) 7 www.fairchildsemi.com FDD8445 N-Channel PowerTrench® MOSFET tm