Fairchild FDD8780 N-channel powertrenchâ® mosfet 25v, 35a, 8.5mohm Datasheet

LE
A
REE I
DF
M ENTATIO
LE
N
MP
FDD8780/FDU8780
N-Channel PowerTrench® MOSFET
25V, 35A, 8.5mΩ
General Description
Features
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
„ Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 35A
„ Max rDS(on) = 12.0mΩ at VGS = 4.5V, ID = 35A
„ Low gate charge: Qg(10) = 21nC(Typ), VGS = 10V
„ Low gate resistance
Application
„ Avalanche rated and 100% tested
„ RoHS Compliant
„ Vcore DC-DC for Desktop Computers and Servers
„ VRM for Intermediate Bus Architecture
D
G
D
I-PAK
G D S
(TO-251AA)
G
S
Short Lead I-PAK
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
Ratings
25
Units
V
VGS
Gate to Source Voltage
±20
V
Drain Current -Continuous (Package Limited)
35
ID
-Continuous (Die Limited)
60
-Pulsed
EAS
Single Pulse Avalanche Energy
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature
(Note 1)
(Note 2)
A
224
73
mJ
50
W
-55 to 175
°C
°C/W
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case TO-252,TO-251
3.0
RθJA
Thermal Resistance, Junction to Ambient TO-252,TO-251
100
°C/W
RθJA
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area
52
°C/W
Package Marking and Ordering Information
Device Marking
FDD8780
Device
FDD8780
Package
TO-252AA
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
FDU8780
FDU8780
TO-251AA
N/A(Tube)
N/A
75 units
FDU8780
FDU8780_F071
TO-251AA
N/A(Tube)
N/A
75 units
©2006 Fairchild Semiconductor Corporation
FDD8780/FDU8780 Rev. B
1
www.fairchildsemi.com
FDD8780/FDU8780 N-Channel PowerTrench® MOSFET
March 2006
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to
25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 20V,
VGS = 0V
IGSS
Gate to Source Leakage Current
VGS = ±20V
25
V
mV/°C
12
1
TJ = 150°C
250
µA
±100
nA
2.5
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to
25°C
-6.3
VGS = 10V, ID = 35A
6.5
8.5
VGS = 4.5V, ID = 35A
9.1
12.0
VGS = 10V, ID = 35A
TJ = 175°C
10.4
15.0
1080
1440
pF
265
355
pF
180
270
pF
rDS(on)
Drain to Source On Resistance
1.2
1.8
mV/°C
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 13V, VGS = 0V,
f = 1MHz
f = 1MHz
Ω
0.9
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to 10V
Qg
Total Gate Charge
VGS = 0V to 5V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller”Charge
VDD = 13V, ID = 35A
VGS = 10V, RGS = 17Ω
VDD = 13V
ID = 35A
Ig = 1.0mA
7
14
ns
9
18
ns
43
69
ns
24
38
ns
21
29
nC
11.2
16
nC
3.5
nC
4.7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 35A
0.92
1.25
VGS = 0V, IS = 15A
0.84
1.0
IF = 35A, di/dt = 100A/µs
28
42
ns
IF = 35A, di/dt = 100A/µs
20
30
nC
V
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting TJ = 25oC, L = 0.3mH, IAS = 22A ,VDD = 23V, VGS = 10V.
2
FDD8780/FDU8780 Rev. B
www.fairchildsemi.com
FDD8780/FDU8780 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
VGS = 10V
ID, DRAIN CURRENT (A)
60
50
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
70
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 4.5V
40
VGS = 3.5V
30
20
VGS = 3V
10
0
0
1
2
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
1.8
5
VGS = 3.5V
4
3
VGS = 4.5V
2
1
0
VGS = 10V
0
10
20
30
40
50
ID, DRAIN CURRENT(A)
60
70
40
ID = 35A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
200
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
50
40
TJ = 175oC
30
TJ = 25oC
20
10
TJ = -55oC
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS, GATE TO SOURCE VOLTAGE (V)
4.5
Figure 5. Transfer Characteristics
30
20
TJ = 175oC
10
TJ = 25oC
4.5
6.0
7.5
9.0
VGS, GATE TO SOURCE VOLTAGE (V)
10
200
100
VGS = 0V
10
TJ = 175oC
1
TJ = 25oC
0.1
0.01
1E-3
0.0
TJ = -55oC
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
3
FDD8780/FDU8780 Rev. B
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
Figure 4. On-Resistance vs Gate to Source
Voltage
70
60
ID = 35A
0
3.0
Figure 3. Normalized On Resistance vs Junction
Temperature
ID, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 3V
6
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
rDS(on), ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 1. On Region Characteristics
7
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FDD8780/FDU8780 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE(V)
10
4000
VDD = 10V
8
CAPACITANCE (pF)
6
VDD = 13V
4
VDD = 16V
2
0
0
5
10
15
Ciss
20
1000
f = 1MHz
VGS = 0V
100
0.1
25
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
70
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
TJ = 25oC
10
TJ = 125oC
TJ = 150oC
60
0.1
1
10
tAV, TIME IN AVALANCHE(ms)
40
30
VGS = 4.5V
20
0
25
100 300
VGS = 10V
50
10
1
0.01
o
RθJC = 3.0 C/W
50
75
100
125
150
175
TA, AMBIENT TEMPERATURE(oC)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
7000
P(PK), PEAK TRANSIENT POWER (W)
500
10us
100
ID, DRAIN CURRENT (A)
30
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain to Source Voltage
50
100us
10
LIMITED BY
PACKAGE
1
0.1
Coss
Crss
1ms
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
SINGLE PULSE
TJ = MAX RATED
DC
TC = 25oC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
50
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
1000
175 – T C
----------------------150
I = I25
100
SINGLE PULSE
30 -5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
4
FDD8780/FDU8780 Rev. B
TC = 25oC
VGS = 10V
www.fairchildsemi.com
FDD8780/FDU8780 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
1E-3
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
0
10
1
10
Figure 13. Transient Thermal Response Curve
5
FDD8780/FDU8780 Rev. B
www.fairchildsemi.com
FDD8780/FDU8780 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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Definition of Terms
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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any time without notice in order to improve design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18
FDD8780/FDU8780 Rev. B
6
www.fairchildsemi.com
FDD8780/FDU8780 N-Channel PowerTrench® MOSFET
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