FDFS2P103 Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P103 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. • –5.3 A, –30V RDS(ON) = 59 mΩ @ VGS = –10 V RDS(ON) = 92 mΩ @ VGS = –4.5 V • VF < 0.52 V @ 1 A (TJ = 125°C) VF < 0.57 V @ 1 A (TJ = 25°C) This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. • Schottky and MOSFET incorporated into single power surface mount SO-8 package • Electrically independent Schottky and MOSFET pinout for design flexibility D D C C A 1 8 C A 2 7 C S 3 6 D G 4 5 D G SO-8 S A Pin 1 A Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter VDSS MOSFET Drain-Source Voltage VGSS MOSFET Gate-Source Voltage ID Drain Current PD Power Dissipation for Dual Operation – Continuous (Note 1a) – Pulsed Power Dissipation for Single Operation (Note 1a) Ratings –30 ±25 –5.3 –20 Units 2 W 1 (Note 1c) 0.9 Operating and Storage Junction Temperature Range VRRM Schottky Repetitive Peak Reverse Voltage IO Schottky Average Forward Current (Note 1a) V A 1.6 (Note 1b) TJ, TSTG V –55 to +150 °C 30 V 1 A Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDFS2P103 FDFS2P103 13’’ 12mm 2500 units 2001 Fairchild Semiconductor Corporation FDFS2P103 Rev C(W) FDFS2P103 September 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min ID = –250 µA VGS = 0 V, ID = –250 µA,Referenced to 25°C –30 Typ Max Units –23 mV/°C Off Characteristics V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 25 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –25 V, VDS = 0 V –100 nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = –250 µA VDS = VGS, ID = –250 µA,Referenced to 25°C –1 VGS = –10 V, ID = –5.3 A VGS = –4.5 V, ID = –4 A VGS=–10 V, ID =–5.3A, TJ=125°C ID(on) On–State Drain Current VGS = –10 V, VDS = –5 V gFS Forward Transconductance VDS = –5V, ID = –5.3 A VDS = –15 V, f = 1.0 MHz VGS = 0 V, –1.7 4.5 –3 46 70 63 59 92 88 V mV/°C –20 mΩ A 10 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) 528 pF 132 pF 70 pF (Note 2) 7 14 ns 13 24 ns Turn–Off Delay Time 14 25 ns tf Turn–Off Fall Time 9 17 ns Qg Total Gate Charge 5.3 8 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDD = –15 V, VGS = –10 V, VDS = –15 V, VGS = –5 V ID = –1 A, RGEN = 6 Ω ID = –5.3 A, 2.2 nC 1.6 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –1.3 A Voltage (Note 2) –0.7 –1.3 –1.2 A V 15 6 0.41 0.32 100 30 0.57 0.52 µA mA V V Schottky Diode Characteristics IR Reverse Leakage VR = 30 V VF Forward Voltage IF = 1A TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C FDFS2P103 Rev C(W) FDFS2P103 Electrical Characteristics °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 RθJA Thermal Resistance, Junction-to-Ambient (Note 1c) 135 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDFS2P103 Rev C(W) FDFS2P103 Thermal Characteristics FDFS2P103 Typical Characteristics 30 2 VGS = -10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -6.0V -ID, DRAIN CURRENT (A) -5.0V -4.5V 20 -4.0V 10 -3.5V -3.0V 1.8 VGS=-4.0V 1.6 -4.5V 1.4 -5.0V -6.0V -7.0V 1.2 -8.0V 0.8 0 0 1 2 3 4 5 0 6 6 12 Figure 1. On-Region Characteristics. 24 30 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 1.6 ID = -5.3A VGS = -10V ID = -2.8A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 18 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 0.2 0.15 TA = 125oC 0.1 TA = 25oC 0.05 0 0.6 -50 -25 0 25 50 75 100 125 150 2 175 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 15 100 25oC TA = -55oC -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) -10V 1 12 125oC 9 6 3 0 1 1.5 2 2.5 3 3.5 4 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4.5 VGS =0 V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDFS2P103 Rev C(W) FDFS2P103 Typical Characteristics 800 VDS = -10V ID = -5.3A 8 f = 1 MHz VGS = 0 V 700 -15V -20V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 6 4 2 600 CISS 500 400 300 COSS 200 100 CRSS 0 0 0 2 4 6 8 10 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. IR, REVERSE LEAKAGE CURRENT (A) IF, FORWARD LEAKAGE CURRENT (A) 15 20 25 30 Figure 8. Capacitance Characteristics. 10 TJ = 125oC 1 0.1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) TJ = 25oC 0.01 0.001 1.00E-01 TJ = 125oC 1.00E-02 1.00E-03 1.00E-04 TJ = 25oC 1.00E-05 1.00E-06 1.00E-07 0 0.1 0.2 0.3 0.4 0.5 0.6 0 VF, FORWARD VOLTAGE (V) 10 20 30 40 50 60 VR, REVERSE VOLTAGE (V) Figure 9. Schottky Diode Forward Voltage. Figure 10. Schottky Diode Reverse Current. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 R θJA (t) = r(t) * R θJA R θJA = 135 °C/W 0.2 P(pk) 0.1 0.1 t1 0.05 t2 T J - T A = P * R θJA (t) Duty Cycle, D = t 1 / t 2 0.02 0.01 SINGLE PULSE 0.01 0.001 0.01 0.1 1 t 1 , TIM E (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDFS2P103 Rev C(W) SOIC-8 Tape and Reel Data SOIC(8lds) Packaging Configuration: Figure 1.0 ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES N NT IO NS AT TERVE PR ECAUTIO OBSE Packaging Description: SOIC-8 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13” or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7” or 177cm diameter reel. This and some other options are further described in the Packaging Information table. Embossed ESD Marking LING HAND FOR TATIC TROS ELEC ITIVE SENS ES DEVIC Antistatic Cover Tape These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped. Static Dissipative Embossed Carrier Tape F63TNR Label Customized Label F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 F852 NDS 9959 Pin 1 SOIC (8lds) Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Standard (no flow code) TNR 2,500 L86Z F011 D84Z Rail/Tube TNR TNR 95 4,000 500 13” Dia - 13” Dia 7” Dia 355x333x40 530x130x83 355x333x40 193x183x80 Max qty per Box 5,000 30,000 8,000 2,000 Weight per unit(gm) 0.0774 0.0774 0.0774 0.0774 Weight per Reel (kg) 0.6060 - 0.9696 0.1182 Box Dimension (mm) F852 NDS 9959 SOIC-8 Unit Orientation Barcode Label Note/Comments Barcode Label 355mm x 333mm x 40mm Intermediate container for 13” reel option Barcode Label Barcode Label sample 193mm x 183mm x 80mm Pizza Box for Standard Option SOIC(8lds)Tape Leader and Trailer Configuration: Figure 2.0 LOT: CBVK741B019 CBVK741B019 FDS9953A FSID: FDS9953A 3000 QTY: 2500 SPEC: D/C1: Z9842AB QTY1: SPEC REV: D/C2: QTY2: CPN: FAIRCHILD SEMICONDUCTOR CORPORATION (F63T NR) Carrier Tape Cover Tape Components Tr ailer Ta pe 640mm minimum or 80 empty pockets ©2001 Fairchild Semiconductor Corporation Leader Tape 1680mm minimum or 210 empty pockets June 2001, Rev. C1 SOIC-8 Tape and Reel Data, continued SOIC(8lds) Embossed Carrier Tape Configuration: Figure 3.0 P0 D0 T E1 F K0 Wc W E2 B0 Tc A0 D1 P1 User Direction of Feed Dimensions are in millimeter Pkg type SOIC(8lds) (12mm) A0 5.30 +/-0.10 B0 6.50 +/-0.10 W 12.0 +/-0.3 D0 D1 1.55 +/-0.05 E1 1.60 +/-0.10 E2 1.75 +/-0.10 F 10.25 min P1 5.50 +/-0.05 P0 8.0 +/-0.1 4.0 +/-0.1 K0 2.1 +/-0.10 Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C). T Wc 0.450 +/0.150 9.2 +/-0.3 0.06 +/-0.02 0.5mm maximum 20 deg maximum Typical component cavity center line B0 Tc 0.5mm maximum 20 deg maximum component rotation Typical component center line Sketch A (Side or Front Sectional View) A0 Component Rotation Sketch C (Top View) Component lateral movement Sketch B (Top View) SOIC(8lds) Reel Configuration: Figure 4.0 Component Rotation W1 Measured at Hub Dim A Max Dim A max See detail AA Dim N 7" Diameter Option B Min Dim C See detail AA W3 13" Diameter Option Dim D min W2 max Measured at Hub DETAIL AA Dimensions are in inches and millimeters Tape Size Reel Option Dim A Dim B 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 2.165 55 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 0.059 1.5 512 +0.020/-0.008 13 +0.5/-0.2 0.795 20.2 7.00 178 0.488 +0.078/-0.000 12.4 +2/0 0.724 18.4 0.469 – 0.606 11.9 – 15.4 12mm 7" Dia 7.00 177.8 12mm 13" Dia 13.00 330 ã 1998 Fairchild Semiconductor Corporation Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL) January 2001, Rev. C SOIC-8 Package Dimensions SOIC-8 (FS PKG Code S1) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0774 9 ©2000 Fairchild Semiconductor International September 1998, Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4