Fairchild FDG330P P-channel 1.8v specified powertrench mosfet Datasheet

FDG330P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
• –2 A, –12 V.
Applications
• Low gate charge
• Battery management
• High performance trench technology for extremely
low RDS(ON)
• Load switch
RDS(ON) = 110 mΩ @ VGS = –4.5 V
RDS(ON) = 150 mΩ @ VGS = –2.5 V
RDS(ON) = 215 mΩ @ VGS = –1.8 V
• Compact industry standard SC70-6 surface mount
package
D
D
S
Pin 1
D
SC70-6
D
Absolute Maximum Ratings
Symbol
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
– Continuous
(Note 1a)
5
3
4
Ratings
Units
–12
V
±8
V
–2
A
–6
Power Dissipation for Single Operation
TJ, TSTG
2
TA=25oC unless otherwise noted
– Pulsed
PD
6
G
Parameter
VDSS
1
(Note 1a)
0.75
(Note 1b)
0.48
Operating and Storage Junction Temperature Range
W
–55 to +150
°C
260
°C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
RθJA
Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.30
FDG330P
7’’
8mm
3000 units
2001 Fairchild Semiconductor Corporation
FDG330P Rev D (W)
FDG330P
December 2001
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
–2.7
mV/°C
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = –250 µA, Referenced to 25°C
VDS = –10 V, VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V,
VDS = 0 V
–100
nA
ID = –250 µA
On Characteristics
ID = –250 µA
–12
V
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA, Referenced to 25°C
2.3
84
107
145
98
ID(on)
On–State Drain Current
VGS = –4.5 V, ID = –2.0 A
VGS = –2.5 V, ID = –1.7 A
VGS = –1.8 V, ID = –1.4 A
VGS = –4.5 V, ID = –2.0 A, TJ = 125°C
VGS = –4.5 V, VDS = –5 V
gFS
Forward Transconductance
VDS = –5 V,
ID = –2.0 A
VDS = –6.0 V,
f = 1.0 MHz
V GS = 0 V,
–0.4
–0.7
–1.5
V
mV/°C
110
150
215
148
–6
mΩ
A
6.8
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
477
pF
186
pF
124
pF
(Note 2)
VDD = –6.0 V, ID = 1 A,
VGS = –4.5 V, RGEN = 6 Ω
10
20
ns
11
20
ns
ns
td(off)
Turn–Off Delay Time
12
22
tf
Turn–Off Fall Time
18
32
ns
Qg
Total Gate Charge
5
7
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = –6.0 V,
VGS = –4.5 V
ID = –2.0 A,
0.8
nC
1.4
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –0.62 A
(Note 2)
–0.7
–0.62
A
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a.)
170°C/W when mounted on a 1 in2 pad of 2 oz. copper.
b.)
260°C/W when mounted on a minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDG330P Rev D (W)
FDG330P
Electrical Characteristics
FDG330P
Typical Characteristics
6
3
-2.5V
-2.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS=-4.5V
-ID, DRAIN CURRENT (A)
-3.0V
-1.8V
4.5
3
-1.5V
1.5
VGS=-1.5V
2.6
2.2
1.8
-1.8V
-2.0V
1.4
-2.5V
-4.5V
0.6
0
0
0.5
1
1.5
2
0
2.5
1.5
Figure 1. On-Region Characteristics.
4.5
6
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
0.3
ID = -2.0A
VGS = -4.5V
1.3
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
1.2
1.1
1
0.9
0.8
0.7
ID = -1A
0.25
0.2
TA = 125oC
0.15
0.1
TA = 25oC
0.05
-50
-25
0
25
50
75
100
125
150
1
2
o
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VDS = -5V
o
TA = -55 C
4.5
-IS, REVERSE DRAIN CURRENT (A)
6
-ID, DRAIN CURRENT (A)
-3.0V
1
25oC
125oC
3
1.5
0
0.5
1
1.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
VGS = 0V
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG330P Rev D (W)
FDG330P
Typical Characteristics
800
ID = -2A
VDS = -4V
-6V
5
f = 1 MHz
VGS = 0 V
700
-8V
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
6
4
3
2
600
CISS
500
400
300
COSS
200
1
100
0
0
2
4
6
CRSS
0
8
0
2
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
8
10
12
10
RDS(ON) LIMIT
100µs
100ms
1s
1
1ms
10ms
DC
VGS = -4.5V
SINGLE PULSE
RθJA = 260oC/W
0.1
P(pk), PEAK TRANSIENT POWER (W)
10
TA = 25oC
0.01
0.1
1
10
SINGLE PULSE
RθJA = 260°C/W
TA = 25°C
8
6
4
2
0
0.01
100
0.1
-VDS, DRAIN-SOURCE VOLTAGE (V)
1
10
100
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
6
Figure 8. Capacitance Characteristics.
100
-ID, DRAIN CURRENT (A)
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
o
RθJA = 260 C/W
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
0.01
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDG330P Rev D (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET 
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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