FDG8842CZ tm Complementary PowerTrench® MOSFET Q1:30V,0.75A,0.4Ω; Q2:–25V,–0.41A,1.1Ω Features General Description Q1: N-Channel These N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell Max rDS(on) = 0.4Ω at VGS = 4.5V, ID = 0.75A density, DMOS technology. This very high density process is Max rDS(on) = 0.5Ω at VGS = 2.7V, ID = 0.67A especially Q2: P-Channel device has been designed especially for low voltage applica- tailored to minimize on-state resistance. This tions as a replacement for bipolar digital transistors and small Max rDS(on) = 1.1Ω at VGS = –4.5V, ID = –0.41A signal MOSFETs. Since bias resistors are not required, this dual Max rDS(on) = 1.5Ω at VGS = –2.7V, ID = –0.25A digital FET can replace several different digital transistors, with Very low level gate drive requirements operation in 3V circuits(VGS(th) <1.5V) different bias resistor values. allowing direct Very small package outline SC70-6 RoHS Compliant S2 G2 S1 D1 D1 G1 D2 G1 D2 S1 SC70-6 Q1 G2 Q2 S2 Pin 1 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current -Continuous -Pulsed 2.2 –1.2 ID Parameter Q1 30 Power Dissipation for Single Operation PD TJ, TSTG (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Q2 –25 Units V ±12 –8 V 0.75 –0.41 0.36 0.30 –55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient Single operation (Note 1a) 350 RθJA Thermal Resistance, Junction to Ambient Single operation (Note 1b) 415 °C/W Package Marking and Ordering Information Device Marking .42 ©2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B Device FDG8842CZ Reel Size 7” 1 Tape Width 8mm Quantity 3000 units www.fairchildsemi.com FDG8842CZ Complementary PowerTrench® MOSFET April 2007 Symbol Parameter Test Conditions Type Min 30 –25 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V ID = –250μA, VGS = 0V Q1 Q2 ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, referenced to 25°C ID = –250μA, referenced to 25°C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V VDS = –20V, VGS = 0V Q1 Q2 1 –1 μA IGSS Gate to Source Leakage Current VGS = ±12V, VDS= 0V VGS = –8V, VDS= 0V Q1 Q2 ±10 –100 μA nA 1.5 –1.5 V V 25 –21 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA VGS = VDS, ID = –250μA Q1 Q2 ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250μA, referenced to 25°C ID = –250μA, referenced to 25°C Q1 Q2 –3.0 1.8 VGS = 4.5V, ID = 0.75A VGS = 2.7V, ID = 0.67A VGS = 4.5V, ID = 0.75A ,TJ = 125°C Q1 0.25 0.29 0.36 0.4 0.5 0.6 VGS = –4.5V, ID = –0.41A VGS = –2.7V, ID = –0.25A VGS = –4.5V, ID = –0.41A ,TJ = 125°C Q2 0.87 1.20 1.22 1.1 1.5 1.9 VDS = 5V, ID = 0.75A VDS = –5V, ID = –0.41A Q1 Q2 3 8 Q1 VDS = 10V, VGS = 0V, f= 1MHZ Q2 VDS = –10V, VGS = 0V, f= 1MHZ Q1 Q2 90 70 120 100 pF Q1 Q2 20 30 30 40 pF Q1 Q2 15 15 25 25 pF Q1 Q2 4 6 10 12 ns Q1 Q2 1 16 10 29 ns Q1 Q2 9 35 18 56 ns Q1 Q2 1 40 10 64 ns Q1 Q2 1.03 1.20 1.44 1.68 nC Q1 Q2 0.29 0.31 nC Q1 Q2 0.17 0.22 nC rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 0.65 –0.65 1.0 –0.8 mV/°C Ω S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics (note 2) td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge ©2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B Q1 VDD = 5V, ID = 0.5A, VGS = 4.5V,RGEN = 6Ω Q2 VDD = –5V, ID = –0.5A, VGS = –4.5V,RGEN = 6Ω Q1 VGS =4.5V, VDD = 5V, ID = 0.75A Q2 VGS = –4.5V, VDD = –5V, ID = –0.41A 2 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units 0.3 –0.3 A 1.2 –1.2 V Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = 0.3A VGS = 0V, IS = –0.3A Q1 Q2 (Note 2) (Note 2) Q1 Q2 0.76 –0.84 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. a. 350°C/W when mounted on a 1 in2 pad of 2 oz copper . b. 415°C/W when mounted on a minimum pad of 2 oz copper. Scale 1:1 on letter size paper. 2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%. ©2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B 3 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 2.6 VGS = 4.5V VGS = 2.7V VGS = 2.0V 1.76 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.20 1.32 VGS =1.8V 0.88 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 0.44 0.00 0.0 VGS = 1.5V 0.5 1.0 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.0 VGS = 1.8V 2.2 1.8 VGS = 3.5V 1.4 VGS = 2.7V 1.0 0.6 0.00 0.44 0.88 1.32 1.76 2.20 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 0.8 1.6 rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 0.6 -50 SOURCE ON-RESISTANCE (Ω) ID =0.38A ID = 0.75A VGS = 4.5V TJ = 125oC 0.4 TJ = 25oC 0.2 -25 0 25 50 75 100 125 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 0.6 150 1 2 TJ, JUNCTION TEMPERATURE (oC) 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On - Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 2.20 2 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 1.76 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT(A) Figure 1. On-Region Characteristics NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 2.0V VDD = 5V 1.32 TJ = 150oC 0.88 TJ = 25oC 0.44 0.00 0.0 TJ = -55oC 0.5 1.0 1.5 2.0 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0V TJ = 150oC 0.1 TJ = 25oC 0.01 TJ = -55oC 0.001 0.2 2.5 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B 1 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted VGS, GATE TO SOURCE VOLTAGE(V) 5 200 ID = 0.22A Ciss 100 3 VDD = 5V 2 CAPACITANCE (pF) 4 VDD = 10V VDD = 15V Coss 10 1 f = 1MHz VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 Qg, GATE CHARGE(nC) 1.2 1 0.1 1.4 1 Figure 8. Capacitance vs Drain to Source Voltage 50 4 r DS n) (o ED P(PK), PEAK TRANSIENT POWER (W) 1 T MI LI 100μs 1ms 10ms 0.1 SINGLE PULSE TJ = MAX RATED 100ms RθJA = 415OC/W 0.01 1s DC TA = 25OC 0.005 0.1 1 30 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics ID, DRAIN CURRENT (A) Crss 10 100 SINGLE PULSE RθJA = 415OC/W TA = 25OC 10 1 0.1 0.0001 0.001 0.01 0.1 1 10 100 1000 t, PULSE WIDTH (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Forward Bias Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 415 C/W SINGLE PULSE 0.0001 0.001 0.01 0.1 1 10 100 1000 t, RECTANGULAR PULSE DURATION (s) Figure 11. ©2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B Transient Thermal Response Curve 5 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted 5 VGS = -3.5V VGS = -4.5V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 1.2 VGS = -2.7V 0.9 VGS = -2.5V 0.6 VGS = -2.0V PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 0.3 VGS = -1.5V 0.0 0 1 2 3 4 4 VGS = -2.0V VGS = -2.7V 2 VGS = -3.5V 1 VGS = -4.5V 0 0.0 0.3 -VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.0 0.8 -25 0 25 50 75 100 125 SOURCE ON-RESISTANCE (Ω) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.2 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX ID =-0.22A 3 2 TJ = 125oC 1 TJ = 25oC 0 1.5 150 TJ, JUNCTION TEMPERATURE (oC) 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 16. On-Resistance vs Gate to Source Voltage Figure 15. Normalized On Resistance vs Junction Temperature 0.6 3 VDS = -5V -IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) 0.9 4 ID = -0.41A VGS = -4.5V 1.2 TJ = -55oC TJ = 150oC 0.4 TJ = 25oC 0.2 0.0 0.5 0.6 Figure 14. Normalized on-Resistance vs Drain Current and Gate Voltage 1.6 0.6 -50 VGS = -2.5V 3 -ID, DRAIN CURRENT(A) Figure 13. On Region Characteristics 1.4 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX VGS = -1.5V 1.0 1.5 2.0 TJ = 150oC 0.1 TJ = 25oC 0.01 TJ = -55oC 0.001 0.2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 17. Transfer Characteristics ©2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B VGS = 0V 1 Figure 18. Source to Drain Diode Forward Voltage vs Source Current 6 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted 5 200 -VGS, GATE TO SOURCE VOLTAGE(V) ID = -0.41A Ciss 100 VDD = -5V 3 CAPACITANCE (pF) 4 VDD = -10V VDD = -15V 2 Coss 10 Crss 1 f = 1MHz VGS = 0V 0 0.0 0.4 0.8 1.2 1 0.1 1.6 Qg, GATE CHARGE(nC) 20 r DS( ) on IT LIM P(PK), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 3 1 ED 1ms 10ms 0.1 SINGLE PULSE TJ = MAX RATED RθJA = 415oC/W 100ms TA = 25oC 1s DC 1 0.3 50 10 25 10 Figure 20. Capacitance vs Drain to Source Voltage Figure 19. Gate Charge Characteristics 0.01 1 -VDS, DRAIN TO SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 415OC/W 10 TA = 25OC 1 0.1 0.001 0.01 0.1 1 10 100 1000 t, PULSE WIDTH (s) -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 21. Forward Bias Safe Operating Area Figure 22. Single Pulse Maximum Power Dissipation 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 0.01 -3 10 o RθJA = 415 C/W -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION (s) Figure 23. Transient Thermal Response Curve ©2007 Fairchild Semiconductor Corporation FDG8842CZ Rev.B 7 www.fairchildsemi.com FDG8842CZ Complementary PowerTrench® MOSFET Typical Characteristics(Q2 P-Channel) TJ = 25°C unless otherwise noted TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Across the board. Around the world™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ CTL™ Current Transfer Logic™ DOME™ E2CMOS™ EcoSPARK® EnSigna™ FACT Quiet Series™ FACT® FAST® FASTr™ FPS™ FRFET® GlobalOptoisolator™ GTO™ HiSeC™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ MICROCOUPLER™ MicroPak™ MICROWIRE™ Motion-SPM™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR® PACMAN™ PDP-SPM™ POP™ Power220® Power247® PowerEdge™ PowerSaver™ Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ ScalarPump™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TCM™ The Power Franchise® ™ TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyWire™ TruTranslation™ µSerDes™ UHC® UniFET™ VCX™ Wire™ tm DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Definition Rev. I26 ©2007 Fairchild Semiconductor Corporation www.fairchildsemi.com FDG8842CZ Complementary PowerTrench® MOSFET tm