Fairchild FDJ1027P P-channel 1.8v specified powertrench mosfet Datasheet

FDJ1027P
P-Channel 1.8V Specified PowerTrench® MOSFET
Features
General Description
■ –2.8 A, –20 V
This dual P-Channel 1.8V specified MOSFET uses Fairchild’s
advanced low voltage PowerTrench process. Packaged in FLMP
SC75, the RDS(ON) and thermal properties of the device are
optimized for battery power management applications.
RDS(ON) = 160 mΩ @ VGS = –4.5 V
RDS(ON) = 230 mΩ @ VGS = –2.5 V
RDS(ON) = 390 mΩ @ VGS = –1.8 V
■ Low gate charge, High Power and Current handling capability
■ High performance trench technology for extremely low
RDS(ON)
■ FLMP SC75 package: Enhanced thermal performance in
industry-standard package size
Applications
■ Battery management/Charger Application
■ Load switch
S2
Bottom Drain Contact
S1
G1
S1
S2
G2
4
3
5
2
6
1
MOSFET Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
PD
Power Dissipation for Single Operation
TJ, Tstg
Operating and Storage Junction Temperature Range
– Continuous
Ratings
Units
–20
V
(Note 1a)
– Pulsed
±8
V
–2.8
A
–12
(Note 1a)
1.5
(Note 1b)
W
0.9
–55 to +150
°C
80
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
5
Package Marking and Ordering Information
.G
©2005 Fairchild Semiconductor Corporation
FDJ1027P Rev. C3
FDJ1027P
7"
8mm
1
3000 units
www.fairchildsemi.com
FDJ1027P P-Channel 1.8V Specified PowerTrench® MOSFET
August 2006
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = –250 µA
∆BVDSS
∆ TJ
Breakdown Voltage Temperature
Coefficient
ID = –250 µA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V, VGS = 0 V
–1
µA
IGSS
Gate–Body Leakage
VGS = ±8 V, VDS = 0 V
±100
nA
–20
V
mV/°C
–13
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
∆VGS(th)
∆ TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250 µA, Referenced to 25°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V, ID = –2.8 A
VGS = –2.5 V, ID = –2.2 A
VGS = –1.8 V, ID = –1.7 A
VGS = –4.5 V, ID = –2.8 A, TJ = 125°C
gFS
Forward Transconductance
VDS = –5 V, ID = –2.8 A
5
S
VDS = –10 V, VGS = 0 V,
f = 1.0 MHz
290
pF
–0.4
–0.8
–1.5
108
163
283
150
V
mV/°C
3
160
230
390
238
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
f = 1.0 MHz
55
pF
29
pF
13
Ω
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
tf
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, RGEN = 6 Ω
8
16
ns
13
23
ns
Turn–Off Delay Time
13
23
ns
Turn–Off Fall Time
18
32
ns
3
4
VDS = –10 V, ID = –2.8 A,
VGS = –4.5 V
nC
0.65
nC
0.75
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward Voltage VGS = 0 V, IS = –1.25 A (Note 2)
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
IF = –2.8 A,
diF/dt = 100 A/µs
–0.8
–1.25
A
–1.2
V
14
ns
4
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
b) 140°C/W when mounted on a
minimum pad of 2 oz copper
(Single Operation).
80°C/W when mounted on a
1in2 pad of 2 oz copper (Single
Operation).
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2
FDJ1027P Rev. C3
www.fairchildsemi.com
FDJ1027P P-Channel 1.8V Specified PowerTrench® MOSFET
Electrical Characteristics TA = 25°C unless otherwise noted
2.6
10
VGS=-4.5V
-3.5V
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-3.0V
-ID, DRAIN CURRENT (A)
8
-2.5V
6
4
-2.0V
-1.8V
2
0
2.4
V GS=-1.8V
2.2
2
-2.0V
1.8
1.6
-2.5V
1.4
-3.0V
-3.5V
1.2
-4.5V
0.8
0
1
2
3
4
5
0
2
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
6
8
10
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.5
0.5
I D = -1.4A
I D = -2.8A
VGS = -4.5V
1.4
RDS(ON) , ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-4.0V
1
1.3
1.2
1.1
1
0.9
0.8
0.44
0.38
0.32
TA = 125°C
0.26
0.2
0.14
TA = 25°C
0.7
0.08
-50
-25
0
25
50
75
100
125
150
1.5
2
2.5
Figure 3. On-Resistance Variation with
Temperature.
3.5
4
4.5
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
5
-IS, REVERSE DRAIN CURRENT (A)
VDS = -5V
25 °C
T A = -55°C
-ID , DRAIN CURRENT (A)
3
-VGS , GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
4
125 °C
3
2
1
VGS=0V
10
1
TA = 125°C
0.1
25°C
0.01
-55°C
0.001
0.0001
0
0.5
1
1.5
2
0
2.5
Figure 5. Transfer Characteristics.
0.4
0.6
0.8
1
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
FDJ1027P Rev. C3
0.2
-V SD, BODY DIODE FORWARD VOLTAGE (V)
-VGS , GATE TO SOURCE VOLTAGE (V)
www.fairchildsemi.com
FDJ1027P P-Channel 1.8V Specified PowerTrench® MOSFET
Typical Characteristics
500
ID = -2.8A
VDS = -5V
f = 1 MHz
VGS = 0 V
-10V
4
400
-15V
CAPACITANCE (pF)
-V GS, GATE-SOURCE VOLTAGE (V)
5
3
2
CISS
300
200
COSS
1
100
0
0
CRSS
0
0.5
1
1.5
2
2.5
3
3.5
0
5
Q g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
15
20
Figure 8. Capacitance Characteristics.
10
P(pk), PEAK TRANSIENT POWER (W)
100
-ID, DRAIN CURRENT (A)
10
-V DS , DRAIN TO SOURCE VOLTAGE (V)
100 µs
10
RDS(ON) LIMIT
1ms
10ms
1s
1
DC
100ms
10s
VGS = -4.5V
SINGLE PULSE
RθJA = 140 o C/W
0.1
T A = 25 oC
SINGLE PULSE
RθJA = 140°C/W
T A = 25°C
8
6
4
2
0
0.01
0.1
1
10
0.001
100
0.01
0.1
1
10
100
-VDS , DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
R θJA(t) = r(t) * R θJA
RθJA = 140 °C/W
0.2
P(pk)
0.1
0.1
t1
0.05
t2
T J - T A = P * R θJA (t)
Duty Cycle, D = t 1/t 2
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
4
FDJ1027P Rev. C3
www.fairchildsemi.com
FDJ1027P P-Channel 1.8V Specified PowerTrench® MOSFET
Typical Characteristics
PKG
CL
DRAIN
1
PKG
CL
(0.24)
(0.18)
3
0.30 MIN
PKG CL
0.20
(0.73)
(0.46)
0.84
(0.50)
6
DRAIN 1
4
6
DRAIN 1
TERMINAL
0.30
0.20
2.35 MIN
PKG
CL
1.35
0.60
4
DRAIN 2
0.50 MIN
Bottom View
1
3
DRAIN 2
TERMINAL
0.50
1.00
1.70
1.50
PKG
CL
A
Recommended Landing Pattern
B
4
6
1.75
1.55
PKG CL
1
3
0.275
0.125
0.075 M A B
(0.20)
0.50
1.00
0.50
Top View
1.00
PKG
CL
0.80
0.65
SEATING
PLANE
PKG
CL
0.225
0.075
1.075
0.925
2.15
1.85
5
FDJ1027P Rev. C3
www.fairchildsemi.com
FDJ1027P P-Channel 1.8V Specified PowerTrench® MOSFET
Dimensional Outline and Pad Layout
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
FACT Quiet Series™
GlobalOptoisolator™
GTO™
HiSeC™
I2C™
i-Lo™
ImpliedDisconnect™
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
MicroPak™
MICROWIRE™
MSX™
MSXPro™
Across the board. Around the world.™
The Power Franchise®
Programmable Active Droop™
ACEx™
ActiveArray™
Bottomless™
Build it Now™
CoolFET™
CROSSVOLT™
DOME™
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FAST®
FASTr™
FPS™
FRFET™
OCX™
OCXPro™
OPTOLOGIC®
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
RapidConnect™
μSerDes™
ScalarPump™
SILENT SWITCHER®
SMART START™
SPM™
Stealth™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
TinyPWM™
TinyPower™
TinyLogic®
TINYOPTO™
TruTranslation™
UHC™
UniFET™
UltraFET®
VCX™
Wire™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
Similar pages