FDJ1032C Complementary PowerTrench® MOSFET Features General Description ■ Q1 –2.8 A, –20 V. ■ Q2 RDS(ON) = 160 mΩ @ VGS = –4.5 V RDS(ON) = 230 mΩ @ VGS = –2.5 V RDS(ON) = 390 mΩ @ VGS = –1.8 V RDS(ON) = 90 mΩ @ VGS = 4.5 V RDS(ON) = 130 mΩ @ VGS = 2.5 V 3.2 A, 20 V. These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. ■ Low gate charge ■ High performance trench technology for extremely low RDS(ON) ■ FLMP SC75 package: Enhanced thermal performance in industry-standard package size Applications ■ DC/DC converter ■ Load switch ■ Motor Driving Bottom Drain Contact S2 S1 4 3 G1 Q2 (N) 2 5 S1 S2 1 6 G2 Q1 (P) Bottom Drain Contact Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter Q1 Q2 Units VDSS Drain-Source Voltage –20 20 V VGSS Gate-Source Voltage ±8 ±12 V ID Drain Current –2.8 3.2 A –12 12 – Continuous (Note 1a) – Pulsed PD TJ, TSTG Power Dissipation for Single Operation (Note 1a) 1.5 (Note 1b) 0.9 Operating and Storage Junction Temperature Range W –55 to +150 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 80 RθJC Thermal Resistance, Junction-to-Case (Note 1a) 5 ©2005 Fairchild Semiconductor Corporation FDJ1032C Rev. B1(W) 1 www.fairchildsemi.com FDJ1032C Complementary PowerTrench® MOSFET February 2005 Device Marking Device Reel Size Tape width Quantity .H FDJ1032C 7" 8mm 3000 units Electrical Characteristics Symbol Parameter Test Conditions Type Min Q1 Q2 –20 20 Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = –250 µA VGS = 0 V, ID = 250 µA V ∆BVDSS ∆ TJ Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C Coefficient ID = 250 µA, Referenced to 25°C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V VDS = 16 V, VGS = 0 V Q1 Q2 –1 1 µA IGSS Gate-Body Leakage VGS = ±8 V, VDS = 0 V VGS = ±12 V, VDS = 0 V Q1 Q2 ±100 ±100 nA –1.5 1.5 V mV/°C –13 13 On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = –250 µA VDS = VGS, ID = 250 µA Q1 Q2 ∆VGS(th) ∆ TJ Gate Threshold Voltage Temperature Coefficient ID = –250 µA, Referenced to 25°C ID = 250 µA, Referenced to 25°C Q1 Q2 3 –3 RDS(on) Static Drain-Source On-Resistance VGS = –4.5 V, ID = –2.8 A VGS = –2.5 V, ID = –2.2 A VGS = –1.8 V, ID = –1.7 A VGS = –4.5 V, ID =2.8A, TJ = 125°C Q1 108 163 283 150 160 230 390 238 VGS = 4.5 V, ID = 3.2 A VGS = 2.5 V, ID = 2.7 A VGS = 4.5 V, ID = 3.2, TJ = 125°C Q2 70 100 83 90 130 132 VDS = –5 V, ID = – 2.8 A VDS = 5 V, ID = 3.2 A Q1 Q2 5 7.5 S Q1: VDS = –10 V, VGS = 0 V, f = 1.0 MHz Q1 Q2 290 200 pF Q1 Q2 55 50 pF Q1 Q2 29 30 pF VGS = 15mV, f = 1.0 MHz Q1 Q2 18 10 Ω Q1: VDD = –10 V, ID = –1 A, VGS = –4.5 V, RGEN = 6 Ω Q1 Q2 8 7 16 14 ns Q1 Q2 13 8 23 16 ns Q1 Q2 13 11 23 20 ns Q1 Q2 18 2 32 4 ns gFS Forward Transconductance –0.4 0.6 –0.8 1.0 mV/°C mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Q2: VDS = 10 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Q2: VDD = 10 V, ID = 1 A, VGS = 4.5V, RGEN = 6 Ω 2 FDJ1032C Rev. B1(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench® MOSFET Package Marking and Ordering Information Symbol Parameter Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Type Q1: VDS = –10 V, ID = –2.8 A, VGS= –4.5V Q1 Q2 3 2 Q1 Q2 0.65 0.4 nC Q1 Q2 0.75 1.0 nC Q2: VDS = 10 V, ID = 3.2 A, VGS = 4.5 V Min Typ Max Units 4 3 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current Q1 Q2 –1.25 1.25 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = –1.3 A (Note 2) VGS = 0 V, IS = 1.3 A (Note 2) Q1 Q2 –0.8 0.8 –1.2 1.2 V trr Diode Reverse Recovery Time IF = –4.2A, dIF/dt = 100 A/µs IF = 5.9A, dIF/dt = 100 A/µs Q1 Q2 14 11 nS Qrr Diode Reverse Recovery Charge IF = –4.2A, dIF/dt = 100 A/µs IF = 5.9A, dIF/dt = 100 A/µs Q1 Q2 4 2.5 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 80°C/W when mounted on a 1in2 pad of 2 oz copper (Single Operation). b) 140°C/W when mounted on a minimum pad of 2 oz copper (Single Operation). Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3 FDJ1032C Rev. B1(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench® MOSFET Electrical Characteristics (Continued) 2.6 10 VGS=-4.5V -3.5V R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V -ID, DRAIN CURRENT (A) 8 -2.5V 6 4 -2.0V -1.8V 2 0 2.4 V GS=-1.8V 2.2 2 -2.0V 1.8 1.6 -2.5V 1.4 -3.0V -3.5V 1.2 -4.5V 0.8 0 1 2 3 4 5 0 2 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) 6 8 10 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 0.5 I D = -1.4A I D = -2.8A VGS = -4.5V 1.4 RDS(ON) , ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -4.0V 1 1.3 1.2 1.1 1 0.9 0.8 0.44 0.38 0.32 TA = 125°C 0.26 0.2 0.14 TA = 25°C 0.7 0.08 -50 -25 0 25 50 75 100 125 150 1.5 2 2.5 Figure 3. On-Resistance Variation with Temperature. 3.5 4 4.5 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 5 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V 25 °C T A = -55°C -ID , DRAIN CURRENT (A) 3 -VGS , GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) 4 125 °C 3 2 1 VGS=0V 10 1 TA = 125°C 0.1 25°C 0.01 -55°C 0.001 0.0001 0 0.5 1 1.5 2 0 2.5 Figure 5. Transfer Characteristics. 0.4 0.6 0.8 1 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4 FDJ1032C Rev. B1(W) 0.2 -V SD, BODY DIODE FORWARD VOLTAGE (V) -VGS , GATE TO SOURCE VOLTAGE (V) www.fairchildsemi.com FDJ1032C Complementary PowerTrench® MOSFET Typical Characteristics : Q1 500 ID = -2.8A VDS = -5V f = 1 MHz VGS = 0 V -10V 4 400 -15V CAPACITANCE (pF) -V GS, GATE-SOURCE VOLTAGE (V) 5 3 2 CISS 300 200 COSS 1 100 0 0 CRSS 0 0.5 1 1.5 2 2.5 3 3.5 0 5 Q g, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 15 20 Figure 8. Capacitance Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) 100 -ID, DRAIN CURRENT (A) 10 -V DS , DRAIN TO SOURCE VOLTAGE (V) 100 µs 10 RDS(ON) LIMIT 1ms 10ms 1s 1 DC 100ms 10s VGS = -4.5V SINGLE PULSE RθJA = 140 o C/W 0.1 T A = 25 oC 0.1 1 10 6 4 2 0 0.001 0.01 100 SINGLE PULSE RθJA = 140°C/W T A = 25°C 8 0.01 0.1 1 10 100 -VDS , DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 5 FDJ1032C Rev. B1(W) 1000 www.fairchildsemi.com FDJ1032C Complementary PowerTrench® MOSFET Typical Characteristics : Q1 2.2 12 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V I D, DRAIN CURRENT (A) 10 8 2.5V 6 4 2.0V 2 0 0 0.5 1 1.5 2 2.5 2 VGS = 2.5V 1.8 1.6 1.4 3.0V 3.5V 1.2 4.0V 0.8 3 0 2 4 VDS , DRAIN-SOURCE VOLTAGE (V) 8 10 12 Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.28 I D = 3.2A VGS = 4.5V 1.5 I D = 1.6A 1.4 R DS(ON) , ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 I D, DRAIN CURRENT (A) Figure 11. On-Region Characteristics. 1.3 1.2 1.1 1 0.9 0.8 0.7 0.24 0.2 0.16 T A = 125°C 0.12 0.08 T A = 25°C 0.6 -50 -25 0 25 50 75 100 125 0.04 150 1 TJ, JUNCTION TEMPERATURE ( °C) 2 3 4 5 V GS , GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 10 10 TA = -55 °C I S, REVERSE DRAIN CURRENT (A) VGS = 0V V DS = 5V I D , DRAIN CURRENT (A) 4.5V 1 25°C 8 125°C 6 4 2 1 TA = 125°C 0.1 25°C 0.01 -55°C 0.001 0.0001 0 1 1.5 2 2.5 3 0 3.5 Figure 15. Transfer Characteristics. 0.4 0.6 0.8 1 1.2 Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. 6 FDJ1032C Rev. B1(W) 0.2 V SD, BODY DIODE FORWARD VOLTAGE (V) VGS , GATE TO SOURCE VOLTAGE (V) www.fairchildsemi.com FDJ1032C Complementary PowerTrench® MOSFET Typical Characteristics : Q2 5 I 300 )V( EGATLOV ECRUOS-ETAG ,SGV D = 3 .2 A 250 4 V DS = 5V 10V C SS I ) Fp ( EC AT CA P AC 200 3 N 15V 150 I 2 100 1 0 f = 1MHz V GS = 0 V COSS 50 0 0 .5 1 1 .5 2 Qg, GATE CHARGE (nC) 0 2 .5 CRSS 0 Figure 17. Gate Charge Characteristics. 5 10 15 Figure 18. Capacitance Characteristics. 100 10 N) L IM IT 100µs 0 .1 10s 4 2 0.01 0 .1 6 N I V G S = 4 .5 V SINGLE PULSE RθJA = 140 oC/W TA = 25 oC 1ms I NI DC 8 N 1s 1 10ms 100ms SINGLE PULSE RθJA = 140°C/W TA = 25°C )W( REWOP T E S ART KAEP ,)kp(P ( N )A( T ERRUC ARD ,D R DS O 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) 1 10 0 0.001 100 V DS, DRAIN-SOURCE VOLTAGE (V) 0.01 0.1 1 t Figure 19. Maximum Safe Operating Area. , T ME ( 1 I sec 10 ) 100 1000 Figure 20. Single Pulse Maximum Power Dissipation. 1 N EC ATS SER LAMREHT T E S ART EV TCEFFE DEZ LAMRO ,) ( D=05 R JA (t ) = r ( t) * R JA R JA = 140 °C . I N /W N 0 .2 P(pk) I I 0 .1 0 .1 t1 0.05 t2 I TJ - TA = P * R N t r 0.01 0.0001 0.02 D 0.01 u ty C ycle, JA (t) D = t1 t 2 / SINGLE PULSE 0.001 0.01 0 .1 t 1 , T ME ( I sec ) 1 10 100 1000 Figure 21. Transient Thermal Response Curve. T ml T n n her ra a sie z on performed using the conditions described in Note 1b. characteri ati t ther m a l response will change depending on the circuit board design. 7 FDJ1032C Rev. B1(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench® MOSFET Typical Characteristics : Q2 PKG CL DRAIN 1 (0.24) (0.18) 3 0.30 0.20 PKG CL (0.73) (0.46) DRAIN 1 (0.50) 6 4 DRAIN 2 PKG CL Bottom View 0.30 MIN 1.70 1.50 A 4 6 DRAIN 1 TERMINAL 0.20 PKG CL B 4 6 0.84 2.35 MIN PKG CL 1.35 0.60 0.50 MIN 1.75 1.55 PKG CL 1 3 0.50 DRAIN 2 TERMINAL 1.00 1 3 Recommended Landing Pattern 0.275 0.125 0.075 M A B (0.20) 0.50 Notes: Unless otherwise specified all dimensions are in millimeters. 1.00 Top View PKG CL PKG CL 0.80 0.65 SEATING PLANE PKG 0.225 0.075 1.075 0.925 2.15 1.85 8 FDJ1032C Rev. B1(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench® MOSFET Dimensional Outline and Pad Layout The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ Across the board. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 9 FDJ1032C Rev. B1(W) www.fairchildsemi.com FDJ1032C Complementary PowerTrench® MOSFET TRADEMARKS