FDMA420NZ Single N-Channel 2.5V Specified tm PowerTrench® MOSFET 20V, 5.7A, 30mΩ General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe. RDS(on) = 30mΩ @ VGS = 4.5 V, ID = 5.7A RDS(on) = 40mΩ @ VGS = 2.5 V, ID = 5.0A Applications Low Profile-0.8mm maximum-in the new package MicroFET 2x2 mm Li-lon Battery Pack HBM ESD protection level > 2.5k V typical (Note 3) RoHS Compliant Pin 1 D D G Drain Source D D S 4 3 G D 5 2 D D 6 1 D Bottom Drain Contact S MicroFET Bottom View 2X2 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS Drain-Source Voltage Parameter VGSS Gate-Source Voltage Drain Current ID -Continuous -Pulsed (Note 1a) TJ, TSTG Units V ±12 V 5.7 A 24 Power dissipation (Steady State) PD Ratings 20 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range 0.9 W 2.4 o -55 to +150 C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 145 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 52 o C/W Package Marking and Ordering Information Device Marking 420 Device FDMA420NZ ©2008 Fairchild Semiconductor Corporation FDMA420NZ Rev B2 Reel Size 7” 1 Tape Width 12mm Quantity 3000 units www.fairchildsemi.com FDMA420NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET April 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V , ID = 250µA ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C 20 V IDSS Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V, 1 µA IGSS Gate-Body Leakage VGS = ±12V, VDS = 0V ±10 µA 1.5 V 12 mV/°C On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C -3.1 VGS = 4.5V, ID = 5.7A 16.8 30 VGS = 4.0V, ID = 5.7A 17.3 31 VGS = 3.1V, ID = 5.0A 18.9 33 VGS = 2.5V, ID = 5.0A 21.2 40 VGS = 4.5V, TJ =150°C ID = 5.7A, 24.8 44 VDS = 5V, ID = 5.7A 28.3 RDS(ON) gFS Static Drain-Source On-Resistance Forward Transconductance 0.6 0.83 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance VDS = 10V, VGS = 0V, f = 1.0MHz 701 935 pF 163 220 pF 125 190 pF f = 1.0MHz 1.92 Ω Switching Characteristics (Note 2) td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 10V, ID = 1A VGS = 4.5V, RGEN = 6Ω VDS = 10V, ID = 5.7A, VGS = 4.5V 9.8 20 ns 8.6 18 ns 21.5 43 ns 8.6 18 ns 8.8 12 nC 0.9 2 nC 2.4 4 nC 2.0 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 2.0A trr Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge IF = 5.7A, di/dt = 100A/µs 0.69 1.2 V 20 ns 5 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. a. 145°C/W when mounted on a minimum pad of 2 oz copper. b. 52°C/W when mounted on a 1 in2 pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%. 3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied. 2 FDMA420NZ Rev B2 www.fairchildsemi.com FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX ID, DRAIN CURRENT (A) 45 40 35 VGS = 2.5V VGS = 4.5V 30 VGS = 3.5V 25 VGS = 3.0V 20 VGS = 2.0V 15 10 VGS = 1.5V 5 0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 0 1 2 3 4 2.1 PULSE DURATION = 300µS DUTY CYCLE = 2.0%MAX 1.8 VGS = 2.0V VGS = 3.0V VGS = 2.5V 1.5 1.2 VGS = 4.5V 0.9 10 20 1.6 ID = 5.7A VGS = 4.5V 1.0 0.8 0.6 -80 -40 0 40 80 120 ID = 2.8A 40 TJ = 125oC 30 20 10 160 PULSE DURATION = 300µS DUTY CYCLE = 2.0%MAX 50 TJ = 25oC 1 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 4. On-Resistance vs Gate to Source Votlage 30 100 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 50 60 1.2 20 40 Figure 2. On-Resistance vs Drain Current and Gate Voltage RDS(ON), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics 25 30 ID, DRAIN CURRENT(A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 VGS = 3.5V PULSE DURATION = 300µs DUTY CYCLE = 2.0%MAX VDS = 5V 15 TJ = 125oC 10 TJ = 25oC TJ = -55oC 5 0 0.5 1.0 1.5 2.0 2.5 VGS = 0V 1 TJ = 125oC TJ = 25oC 0.1 0.01 TJ = -55oC 1E-3 1E-4 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 FDMA420NZ Rev B2 10 www.fairchildsemi.com FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2000 VDS = 15V 4 VDS = 20V 3 VDS = 25V 2 1 0 0 2 4 6 Qg, GATE CHARGE(nC) 8 10 f = 1MHz VGS = 0V 100 Crss 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance vs Drain to Source Voltage 100 6 10us 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) Coss 50 0.1 12 Figure 7. Gate Charge Characteristics 100us 1ms 1 0.1 Ciss 1000 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 5 10ms OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) 0.01 0.1 SINGLE PULSE TJ=MAX RATED TA=25oC 100ms 1s 10s 4 3 VGS = 2.5V 2 1 DC 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 4.5V 5 0 25 50 Figure 9. Forward Bias Safe Operating Area 50 75 100 125 TA, AMBIENT TEMPERATURE(oC) 150 Figure 10. Maximum Continuous Drain Current vs Ambient Temperature P(PK), PEAK TRANSIENT POWER (W) 200 100 TA = 25oC VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I= I 10 150 – T A -------------------- 25 125 SINGLE PULSE 1 0.5 -4 10 -3 10 -2 10 -1 10 t, PULSE WIDTH (s) 0 10 1 10 2 10 3 10 Figure 11. Single Pulse Maximum Power Dissipation 4 FDMA420NZ Rev B2 www.fairchildsemi.com FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 2 Normalized Thermal Impedance, ZθJA 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA RθJA = 145oC SINGLE PULSE 0.01 -4 10 -3 10 -2 10 -1 0 10 10 1 10 2 10 3 10 t, RECTANGULAR PULSE DURATION(s) Figure 12. Transient Thermal Response Curve 5 FDMA420NZ Rev B2 www.fairchildsemi.com FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET Dimensional Outline and Pad Layout 6 FDMA420NZ Rev B2 www.fairchildsemi.com The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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