Fairchild FDMA430NZ Single n-channel 2.5v specified powertrenchâ® mosfet 30v, 5.0a, 40mâ ¦ Datasheet

FDMA430NZ
tm
Single N-Channel 2.5V Specified PowerTrench® MOSFET
30V, 5.0A, 40mΩ
General Description
Features
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process
to optimize the RDS(on) @VGS=2.5V on special MicroFET
leadframe.
„ RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A
„ RDS(on) = 50mΩ @ VGS = 2.5 V, ID = 4.5A
Applications
„ Low Profile-0.8mm maximum-in the new package
MicroFET 2x2 mm
„ Li-lon Battery Pack
„ RoHS Compliant
Pin 1
D
D
G
Drain
Source
D
D
S
4
3
G
D
5
2
D
D
6
1
D
Bottom Drain Contact
S
MicroFET 2X2 (Bottom View)
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
Drain-Source Voltage
Ratings
30
Units
V
VGSS
Gate-Source Voltage
±12
V
Drain Current
5.0
ID
Parameter
-Continuous
-Pulsed
(Note 1a)
Power dissipation (Steady State)
PD
TJ, TSTG
A
20
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
0.9
W
2.4
o
-55 to +150
C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
145
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
52
o
C/W
Package Marking and Ordering Information
Device Marking
430
Device
FDMA430NZ
©2006 Fairchild Semiconductor Corporation
FDMA430NZ Rev B1
Reel Size
7”
1
Tape Width
12mm
Quantity
3000 units
www.fairchildsemi.com
FDMA430NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET
September 2006
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V , ID = 250µA
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA,
Referenced to 25°C
30
V
IDSS
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V,
1
µA
IGSS
Gate-Body Leakage,
VGS = ±12V, VDS = 0V
±10
µA
1.5
V
25.2
mV/°C
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250µA,
Referenced to 25°C
-3.2
VGS = 4.5V, ID = 5.0A
23.6
40
VGS = 4.0V, ID = 5.0A
23.9
41
VGS = 3.1V, ID =4.5A
25.4
43
VGS = 2.5V, ID =4.5A
27.6
50
VGS = 4.5V, ID =5.0A,
TJ =150°C
37.0
61
VDS = 5V, ID =5.0A
25.6
VDS = 10V, VGS =0V,
f = 1.0MHz
600
800
pF
110
150
pF
75
115
pF
RDS(ON)
gFS
Static Drain-Source On-Resistance
Forward Transconductance
0.6
0.81
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
f = 1.0MHz
Ω
3.5
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
8.3
17
ns
7.1
15
td(off)
Turn-Off Delay Time
ns
18.1
37
tf
ns
Turn-Off Fall Time
6.0
12
ns
Qg
Total Gate Charge
7.3
11
nC
Qgs
Gate-Source Charge
0.8
2
nC
Qgd
Gate-Drain Charge
1.9
3
nC
2.0
A
VDD = 10V,
ID = 1A
VGS = 4.5V, RGEN = 6Ω
VDS = 10V, ID = 5.0A,
VGS = 4.5V
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 2.0A
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
IF = 5.0A,
di/dt = 100A/µs
0.69
1.2
V
17
ns
5
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins.
a.
145°C/W when mounted on a minimum pad of 2 oz copper
b.
52°C/W when mounted on a 1 in2 pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
3. The diode connected between the gate and the source serves only as proection against ESD. No gate overvoltage rating is implied.
FDMA430NZ Rev B1
2
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FDMA430NZ Single N-Channel 2.5V specified PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
1.8
NORMOLIZED DRAIN to SOURCE
ON-RESISTANCE
40
ID, DRAIN CURRENT(A)
VGS = 4.5V
VGS = 2.5V
30
VGS = 3.0V
PULSE DURATION=300µS
DUTY CYCLE=2.0% MAX
20
VGS = 2.0V
10
VGS = 1.5V
0
0
1
2
3
VDS, DRAIN TO SOURCE VOLTAGE(V)
4
VGS= 2.0V
1.5
2.5V
1.4
3.0V
1.3
3.5V
1.2
1.1
4.5V
1.0
0.9
0.8
5
1.6
15
20
25
30
35
40
0.08
ID = 5.0A
VGS = 4.5V
1.2
1.0
0.8
0.6
-80
-40
0
40
80
O
120
ID = 2.5A
0.06
0.05
TJ = 125oC
0.04
0.03
0.02
1
160
PULSE DURATION = 300µs
DUTY CYCLE = 2.0% MAX
0.07
TJ = 25oC
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
TJ,JUNCTION TEMPERATURE( C)
Figure 3. Normalized On Resistance vs Junction
Temperature
Figure 4. On-Resistance vs Gate to Source
Votlage
100
30
PULSE DURATION = 300µs
DUTY CYCLE = 2.0% MAX
25
IS, REVERSE CURRENT(A)
ID, DRAIN CURRENT (A)
10
Figure 2. On-Resistance vs Drain Current and
Gate Voltage
RDS(on), DRAIN TO SOURCE
ON-RESISTANCE (OHM)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.6
ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
1.4
1.7
VDS = 5V
20
15
10
o
TJ = 25 C
o
TJ = 125 C
5
10
VGS = 0V
1
0.1
o
TJ = 125 C
o
TJ = 25 C
0.01
o
TJ = -55 C
1E-3
TJ = -55oC
0
0.5
1.0
1.5
2.0
1E-4
0.0
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
FDMA430NZ Rev B1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWAD VOLTAGE(V)
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
3
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FDMA430NZ Single N-Channel 2.5V specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
ID =5.0A
Ciss
4
CAPACITANCE(PF)
VGS,GATE-SOURCE VOLTAGE(V)
1000
5
VDS = 15V
3
VDS = 10V
2
100
VDS = 20V
1
0
0
2
4
6
8
Qg,GATE CHARGE (nC)
f = 1MHZ
VGS = 0V
1
10
VDS,DRAIN TO SOURCE VOLTAGE(V)
30
Figure 8. Capacitance vs Drain to Source Voltage
100
5
10us
10
ID, DRAIN CUREENT(A)
ID, DRAIN CURRENT (A)
Crss
10
0.1
10
Figure 7. Gate Charge Characteristics
100us
1ms
1
0.1
Coss
10ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY RDS(ON)
100ms
1s
10s
SINGLE PULSE
TJ=MAX RATED
TA=25oC
0.01
0.1
4
VGS=4.5V
3
VGS=2.5V
2
1
DC
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
0
25
50
Figure 9. Safe Operating Area
R θJA=145OC/W
50
75
100
125
TA, AMBIENT TEMPERATURE(OC)
150
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
P(PK), PEAK TRANSIENT POWER (W)
200
100
VGS = 10V
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
10
I= I
SINGLE PULSE
150 – T
25
A
-------------------125
1
0.5
-4
10
-3
10
-2
10
-1
10
t, PULSE WIDTH (s)
0
10
1
10
2
10
3
10
Figure 11. Single Pulse Maximum Power Dissipation
FDMA430NZ Rev B1
4
www.fairchildsemi.com
FDMA430NZ Single N-Channel 2.5V specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
Normalized Thermal
Impedance, ZθJA
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
RθJA = 145oC
SINGLE PULSE
0.01
-4
10
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION(s)
Figure 12. Transient Thermal Response Curve
FDMA430NZ Rev B1
5
www.fairchildsemi.com
FDMA430NZ Single N-Channel 2.5V specified PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDMA430NZ Single N-Channel 2.5V specified PowerTrench® MOSFET
NOTES:
A. NOT FULLY CONFORM TO JEDEC REGISTRATION
MO-229 DATED AUG/2003.
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCES PER
ASME Y14.5M,1994
MLP06LrevA
FDMA430NZ Rev B1
6
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Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
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supplementary data will be published at a later date.
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The datasheet is printed for reference information only.
Rev. I20
FDMA430NZ Rev B1
7
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FDMA420NZ Single N-Channel 2.5V specified PowerTrench® MOSFET
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